MARKING 1P
Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
MARKING 1P
MMBT2222A
MMBT2907A
1p sot23
TRANSISTOR 1P SOT23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222ALT1
OT-23
MMBT2907ALT1)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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PDF
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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PDF
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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PDF
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Transistor hFE CLASSIFICATION Marking CE
Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant
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MMBT2222A
OT-23
OT-23
MMBT2907A)
-55to
Transistor hFE CLASSIFICATION Marking CE
marking 1P sot-23
Application of MMBT2907A
sot-23 1P F
MMBT2222A
MMBT2907A
MARKING 1P
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marking 1p sot23
Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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MMBT2222A
OT-23
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
150mA
marking 1p sot23
TRANSISTOR 1P SOT23
1p transistor sot23
1p transistor
sot-23 1P F
marking 1p transistor sot23
TRANSISTOR 1P
Marking 1P
1P sot23
sot23 1p
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Untitled
Abstract: No abstract text available
Text: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES y Epitaxial planar die construction y Complementary PNP Type available FMMBT2907A MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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FMBT2222A
FMBT2222A
OT-23
FMMBT2907A)
-55to
V50mA
500mA
100MHz
150mA
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kst2222a
Abstract: No abstract text available
Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage
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KST2222A
OT-23
KST2222A
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UTC 225
Abstract: No abstract text available
Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE
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MMBT2222A
500mA.
OT-23
QW-R206-019
UTC 225
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0.18 um CMOS Spiral Inductor technology
Abstract: TSMC+rf+cmos+0.18+um
Text: Standard Features • • • • • • • 1.8V CMOS Transistors High Value Poly Resistors N+ & P+ S/D Resistors Low Value Poly Resistor Standard Poly Implant Resistor Multilevel Metallization 1P/4M Non-epi 200 mm Wafer Optional Features • • • •
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12um2
AT589RF
5133B
0.18 um CMOS Spiral Inductor technology
TSMC+rf+cmos+0.18+um
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KST2222A
Abstract: transistor kst2222a
Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage
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KST2222A
OT-23
KST2222A
transistor kst2222a
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uj01
Abstract: M33 TRANSISTOR
Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE
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TC-2173
1988M
uj01
M33 TRANSISTOR
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how to program siemens Logo 230RC manual
Abstract: siemens Logo 230RC user manual 6ED1 052-1MD00-0BA4 siemens Logo 230RC 6ed1 052-1fb00-0ba4 siemens relay logo 230 RCO siemens LOGO 230r program manual siemens Logo 6ed1 052-1md00-0ba4 manual Wiring Diagram SIEMENS logo 230RC 6ED1-052-1FB00 siemens 230RC manual
Text: Manual Edition 06/2003 LOGO! The following supplement is part of this documentation: No. Designation Drawing number Edition 1 Product information A5E00324307-01 07/2004 4 019169 120982 @1P6ED1050-1AA00-0BE5@ 1P 6ED1050-1AA00-0BE5 Siemens AG Bereich Automation and Drives
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A5E00324307-01
1P6ED1050-1AA00-0BE5@
6ED1050-1AA00-0BE5
D-90327
052-2HB00-0BA4
230RCo
052-2FB00-0BA4
12/24R
055-1MB00-0BA1
how to program siemens Logo 230RC manual
siemens Logo 230RC user manual
6ED1 052-1MD00-0BA4
siemens Logo 230RC 6ed1 052-1fb00-0ba4
siemens relay logo 230 RCO
siemens LOGO 230r program manual
siemens Logo 6ed1 052-1md00-0ba4 manual
Wiring Diagram SIEMENS logo 230RC
6ED1-052-1FB00
siemens 230RC manual
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PLD Programming Information
Abstract: CY7C335 PALCE22V10 PLDC20G10 PALCE* programming
Text: 1P LD fax id: 6020 Pro gramming In fo rma tio n PLD Programming Information Introduction PLDs, or programmable logic devices, provide an attractive alternative to logic implemented with discrete devices. Cypress Semiconductor is in the enviable position of being able
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DS199
Abstract: No abstract text available
Text: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage
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OCR Scan
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PDF
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S0T23
FMMT2222
FMMT2222A
FMMT2222R
FMMT2222AR
FMMT2222
FMMT2222A
140KHz
DS199
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MJH16010
Abstract: MJ16010 MJ16012 MJH16012 100-C h1601
Text: ~Öi » F |3 ä 7 5 0 fll 3 aai7D 70 I~ 3875081 G E SO LID STATE 0 1E 17 070 SwftcäMa* Power MJ16010, MJ16012 MJH16010,MJH16012 D > U I File N u m b e r 1P 1839 5-A Sw itchM aX II Power Transistors
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OCR Scan
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PDF
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DD17D7D
MJ16010,
MJ16012
MJH16010
MJH16012
T0-204AA
MJI6010
MJI6012
O-218AC
MJ16010
MJH16012
100-C
h1601
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs
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OCR Scan
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PDF
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TSF1P02HD/D
46A-02
MICR08
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Marking Code 2F
Abstract: 250-600
Text: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300
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OCR Scan
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PDF
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MMBT2222A
IMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
O-236
40min.
Marking Code 2F
250-600
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TRANSISTOR BC 545
Abstract: No abstract text available
Text: MOTOROLA O n to r H iin r in ru iM iit SEMICONDUCTOR TECHNICAL DATA by MTDF1P02HD/D Designer’s Data Sheet M T D F 1P 0 2H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor DUAL TMOS POWER MOSFET
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OCR Scan
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PDF
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MTDF1P02HD/D
TRANSISTOR BC 545
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TMPTA06
Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Text: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE
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OCR Scan
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PDF
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T-23/TO
-236A
TMPT2222A
TMPT3904
TMPT4401
TMPT5089
TMPT6427
TMPTA06
TMPTA42
marking 1p
marking 1R NPN
BEC npn
V7560
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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OCR Scan
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PDF
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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