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    1S1885 DIODE Search Results

    1S1885 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1S1885 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1S1885

    Abstract: 1S1888 1s1887 1S1886 C6060
    Text: 1S1885 ~ 1S1888 SILICON RECTIFIER DIODES PRV : 100 ~ 600 Volts Io : 1.0 Ampere D2 FEATURES : * * * * * * 1.00 25.4 MIN. 0.161 (4.10) 0.154 (3.90) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		PDF 1S1885 1S1888 UL94V-O MIL-STD-202, 1S1885 1S1888 1s1887 1S1886 C6060

    Untitled

    Abstract: No abstract text available
    Text: 1S1885 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)65’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.60 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)1.5 @Temp. (øC) (Test Condition)25’


    Original     		PDF 1S1885 Voltage100 Current400m StyleDO-15

    MG150Q1JS44

    Abstract: 1S1885 diode MG150Q1JS
    Text: MG150Q1JS44 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS44 Unit in mm High Power Switching Applications Chopper Applications • High input impedance · High speed: tf = 0.4µs max. · Low saturation voltage · Enhancement−mode · The electrodes are isolated from case.


    Original     		PDF MG150Q1JS44 2-109C1A MG150Q1JS44 1S1885 diode MG150Q1JS

    zener diode 1NU 9F

    Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
    Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:


    Original     		PDF BCE0001A BCE0001B zener diode 1NU 9F diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    1BH62

    Abstract: IS1835 1DH62 30JG11 0R06YXZ31 1n61a1 25FXF12 1GH62 toshiba 6jg11 1JH62
    Text: p p 9097250 Q 1 » TOSHIBA | N' \ v ^ DDDHEm <DI S C R E TE /O P TO f STANDARD RECTIFIERS _ M D T -O f- 0 / 39C 0 2 2 1 4 p .io ~ p .24_ ~ _ Average Forward Current —» Peak Reverse Voltage 1A 1.2A 1.5A 100V S5277B 1S1885


    OCR Scan     		PDF S5277B 1S1885 1BZ61 S5277D 1S1886 1DZ61 S5277G 1S1887 1GZ61 S5277J 1BH62 IS1835 1DH62 30JG11 0R06YXZ31 1n61a1 25FXF12 1GH62 toshiba 6jg11 1JH62

    DIODE S4 29

    Abstract: No abstract text available
    Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be


    OCR Scan     		PDF

    s1854

    Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
    Text: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #


    OCR Scan     		PDF 2SC3560/1 2SC3497 2SC3626 2SC3562 2SC2552 2SC2553 2SC3625 2SC2555 2SC3306 2SK693# s1854 toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    TSS2J2A44S

    Abstract: TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S
    Text: 3. RATINGS & METHOD OF USE 3.1 T hyristors 3.1.1 G ate triggering characteristics. Supplying a gate c u rre n t to such th y risto rs as SCRs, TRIA C s, e tc ., sw itches them from the o ff-state to th e on-state. T h y risto r gate characteristics include gate


    OCR Scan     		PDF 125x125x2m TSS2J2A44S TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76