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    1SS370 Search Results

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    1SS370 Price and Stock

    Toshiba America Electronic Components 1SS370TE85LF

    DIODE GEN PURP 200V 100MA SC70
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    DigiKey 1SS370TE85LF Reel
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    1SS370TE85LF Cut Tape 1
    • 1 $0.45
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    1SS370TE85LF Digi-Reel 1
    • 1 $0.45
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    Mouser Electronics 1SS370TE85LF 5,782
    • 1 $0.43
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    • 100 $0.153
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    Samtec Inc DW-08-11-S-S-370

    Conn Board Stacker HDR 8 POS 2.54mm Solder ST Thru-Hole - Bulk (Alt: DW-08-11-S-S-370)
    Free Sample
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    Avnet Americas DW-08-11-S-S-370 Bulk 1
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    Newark DW-08-11-S-S-370 Bulk 1
    • 1 $1.64
    • 10 $1.48
    • 100 $1.26
    • 1000 $0.906
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    Master Electronics DW-08-11-S-S-370
    • 1 $2.1
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    Sager DW-08-11-S-S-370
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    Toshiba America Electronic Components 1SS370(F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS370(F) 1,944
    • 1 $0.53
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    Toshiba America Electronic Components 1SS370(TE85L,F)

    Diode: switching; SMD; 250V; 100mA; 60ns; SOT323; Ufmax: 1.2V; 100mW
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    TME 1SS370(TE85L,F) 214 5
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    ComSIT USA 1SS370(TE85L,F) 3,660
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    1SS370 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS370 Kexin Silicon Epitaxial Planar Type Original PDF
    1SS370 Toshiba Japanese - Diodes Original PDF
    1SS370 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS370 Transys Electronics Plastic-Encapsulated Diode Original PDF
    1SS370 TY Semiconductor Silicon Epitaxial Planar Type - SOT-23 Original PDF
    1SS370 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS370 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS370TE85LF Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW 200V 100MA USM Original PDF

    1SS370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diodes smd marking f5 reverse voltage

    Abstract: MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370
    Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage


    Original     		PDF 1SS370 OT-23 Diodes smd marking f5 reverse voltage MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370

    1SS370

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE 1. ANODE 2. N.C. FEATURES z Small surface mounting type z High Speed z High reliability with high surge current handing capability 3. CATHODE


    Original     		PDF OT-323 OT-323 1SS370 100mA 1SS370

    1SS370

    Abstract: VR200
    Text: 1SS370 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS370 ○ 高電圧スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm


    Original     		PDF 1SS370 SC-70 100mA 1SS370 VR200

    1SS370

    Abstract: No abstract text available
    Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications l Low forward voltage Unit: mm : VF 2 = 0.9V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package


    Original     		PDF 1SS370 SC-70 1SS370

    Untitled

    Abstract: No abstract text available
    Text: 1SS370 Surface Mount Switching Diode SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 200 VOLTS Features: * High Voltage, High Speed Switching Applications * Low Forward Voltage : VF = 0.9V * Fast Reverse Recovery time : trr = 60nS * Small Total Capacitance : CT = 1.5pF


    Original     		PDF 1SS370 OT-323 OT-323 02-Sep-09 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE FEATURES z High voltage, high speed switching applications z Low forward voltage z Fast reverse recovery time z Small total capacitance 1 3


    Original     		PDF OT-323 OT-323 1SS370 100mA

    MARKING CODE f5

    Abstract: 1SS370W
    Text: 1SS370W Silicon Epitaxial Planar Diode For high voltage and high speed switching applications 3 1 2 Marking Code: F5 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 250 V Reverse Voltage VR 200 V Average Forward Current


    Original     		PDF 1SS370W MARKING CODE f5 1SS370W

    marking f5

    Abstract: diode marking F5
    Text: 1SS370 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 200 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-323 • Fast Switching Speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min. A A1


    Original     		PDF 1SS370 OT-323 OT-323 J-STD-020D 2002/95/EC 100mA May-2009, KSYR13 1SS370 marking f5 diode marking F5

    1SS370

    Abstract: No abstract text available
    Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications z Low forward voltage Unit: mm : VF 2 = 0.9V (typ.) z Fast reverse recovery time : trr = 60ns (typ.) z Small total capacitance : CT = 1.5pF (typ.) z Small package


    Original     		PDF 1SS370 SC-70 1SS370

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE FEATURES z High voltage, high speed switching applications z Low forward voltage z Fast reverse recovery time z Small total capacitance 1 3


    Original     		PDF OT-323 OT-323 1SS370

    diode marking F5

    Abstract: marking F5
    Text: 1SS370 Surface Mount Switching Diode SOT-323 Features — Small surface mounting type. — High speed. — High reliability with high surge current handing capability. Applications — Dimensions in inches and millimeters For general purpose switching applications.


    Original     		PDF 1SS370 OT-323 1SS370 100mA diode marking F5 marking F5

    1SS370

    Abstract: No abstract text available
    Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF 2 = 0.9V (typ.) Fast reverse recovery time : trr = 60ns (typ.) Small total capacitance : CT = 1.5pF (typ.) Small package


    Original     		PDF 1SS370 SC-70 961001EAA2' 1SS370

    MARKING CODE f5

    Abstract: No abstract text available
    Text: 1SS370W Silicon Epitaxial Planar Diode For high voltage and high speed switching applications 3 1 2 Marking Code: F5 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 250 V Reverse Voltage VR 200 V Average Forward Current


    Original     		PDF 1SS370W MARKING CODE f5

    1SS370

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 1SS370 SWITCHING DIODE 1. ANODE 2. N.C. FEATURES z High Voltage, High Speed Switching Applications z Low forward voltage z Fast reverse recovery time z Small total capacitance


    Original     		PDF OT-323 OT-323 1SS370 100mA 1SS370

    1SS370

    Abstract: J-STD-020D
    Text: 1SS370 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 200 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-323 • Fast Switching Speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min. A A1


    Original     		PDF 1SS370 OT-323 OT-323 J-STD-020D 2002/95/EC 1SS370 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage 2 +0.1 0.95-0.1


    Original     		PDF 1SS370 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications l Low forward voltage Unit: mm : VF 2 = 0.9V (typ.) l Fast reverse recovery time : trr = 60ns (typ.) l Small total capacitance : CT = 1.5pF (typ.) l Small package


    Original     		PDF 1SS370 SC-70 100mA

    1SS370

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Diode SOT-323 1SS370 SWITCHING DIODE 1. ANODE 2. N.C. FEATURES z Small surface mounting type z High Speed z High reliability with high surge current handing capability 3. CATHODE MAKING: F5 Unit:mm


    Original     		PDF OT-323 OT-323 1SS370 100mA 1SS370

    1SS370

    Abstract: No abstract text available
    Text: 1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications z Low forward voltage Unit: mm : VF 2 = 0.9V (typ.) z Fast reverse recovery time : trr = 60ns (typ.) z Small total capacitance : CT = 1.5pF (typ.) z Small package


    Original     		PDF 1SS370 SC-70 1SS370

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS370 1 SS370 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 Vf 2 = 0.9V (TYP.)


    OCR Scan     		PDF 1SS370 SS370 SC-70 100mA

    1SS370

    Abstract: No abstract text available
    Text: TOSHIBA 1SS370 1 SS370 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 + 0.1 V f 2 = 0.9V (TYP.)


    OCR Scan     		PDF 1SS370 SC-70 961001EAA2' 1SS370

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS370 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 <; <; 3 7 n • v r wêêf m w HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS • Low Forward Voltage V F 2 = 0.9V (TYP.) • F a st Reverse Recovery Time tr r —60 ns (MAX.) • Sm all Total Capacitance


    OCR Scan     		PDF 1SS370 SC-70 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS370 1 SS370 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 ± 0.1 Vf 2 = 0.9V (TYP.)


    OCR Scan     		PDF 1SS370 SS370 SC-70 961001EAA2'