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    1SS373 Price and Stock

    Toshiba America Electronic Components 1SS373(TPH3)

    0.1A, SILICON, SIGNAL DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS373(TPH3) 1,292
    • 1 $0.91
    • 10 $0.91
    • 100 $0.91
    • 1000 $0.364
    • 10000 $0.364
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    1SS373 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS373 Kexin High Speed Switching Application Original PDF
    1SS373 Toshiba Schottky barrier diode for high speed switching applications Original PDF
    1SS373 Toshiba Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS373 TY Semiconductor High Speed Switching Application - SOD-523 Original PDF
    1SS373 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    1SS373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS373

    Abstract: No abstract text available
    Text: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS373 1SS373

    marking code RB

    Abstract: rb marking code 1SS373WT
    Text: 1SS373WT SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 RB Top View Marking Code: "RB" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original
    PDF 1SS373WT OD-523 OD-523 marking code RB rb marking code 1SS373WT

    Untitled

    Abstract: No abstract text available
    Text: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS373

    diode sy 180 10

    Abstract: 1ss373
    Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol


    Original
    PDF 1SS373 OD-323 OD-323 diode sy 180 10 1ss373

    1ss373

    Abstract: No abstract text available
    Text: 1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS373 1ss373

    diode sy 200

    Abstract: 1ss373 diode sy 180 10
    Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original
    PDF 1SS373 OD-323 OD-323 diode sy 200 1ss373 diode sy 180 10

    diode sy

    Abstract: diode sy 160 diode sy 200 1ss373 diodes SY 200
    Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original
    PDF 1SS373 OD-323 OD-323 diode sy diode sy 160 diode sy 200 1ss373 diodes SY 200

    diode sy 180 10

    Abstract: 1ss373 diode sy
    Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol


    Original
    PDF 1SS373 OD-323 OD-323 diode sy 180 10 1ss373 diode sy

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS373 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low forward voltage :VF = 0.23V TYP. IF = 5mA +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25 Characteristic


    Original
    PDF 1SS373 OD-523 07max 77max

    "MARKING CODE N"

    Abstract: MARKING CODE N
    Text: 1SS373WT SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 N Top View Marking Code: "N" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value


    Original
    PDF 1SS373WT OD-523 OD-523 "MARKING CODE N" MARKING CODE N

    marking code RB

    Abstract: 1SS373WT
    Text: 1SS373WT SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 RB Top View Marking Code: "RB" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Tj = 25 OC Parameter Symbol Value


    Original
    PDF 1SS373WT OD-523 OD-523 marking code RB 1SS373WT

    maxim package marking

    Abstract: maxim package "marking" 1ss373
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS373 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low forward voltage :VF = 0.23V TYP. IF = 5mA +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25


    Original
    PDF 1SS373 OD-523 07max 77max maxim package marking maxim package "marking" 1ss373

    diode sy 180 10

    Abstract: 1ss373
    Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol


    Original
    PDF 1SS373 OD-323 OD-323 diode sy 180 10 1ss373

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS373 TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TYP. @Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Vn'llncr#» VRM 15 V Reverse Voltage


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    PDF 1SS373

    Untitled

    Abstract: No abstract text available
    Text: 1SS373 T O S H IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE • S m a ll Package • Low Forward Voltage : V p = 0.23V TYP. @ Ip U n it in mm = 5mA M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse


    OCR Scan
    PDF 1SS373 SS373

    1ss373

    Abstract: No abstract text available
    Text: 1SS373 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA 0.8 ±0.1 MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC


    OCR Scan
    PDF 1SS373 1ss373

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


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    PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P