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    1SS374 Price and Stock

    Toshiba America Electronic Components 1SS374(TE85L,F)

    DIODE ARR SCHOTT 10V 100MA SC59
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    DigiKey 1SS374(TE85L,F) Digi-Reel 20,198 1
    • 1 $0.27
    • 10 $0.167
    • 100 $0.27
    • 1000 $0.06758
    • 10000 $0.06758
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    1SS374(TE85L,F) Cut Tape 20,198 1
    • 1 $0.27
    • 10 $0.167
    • 100 $0.27
    • 1000 $0.06758
    • 10000 $0.06758
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    1SS374(TE85L,F) Reel 18,000 3,000
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    • 10000 $0.05627
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    Mouser Electronics 1SS374(TE85L,F) 9,182
    • 1 $0.19
    • 10 $0.128
    • 100 $0.066
    • 1000 $0.059
    • 10000 $0.047
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    Verical 1SS374(TE85L,F) 2,950 437
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    • 1000 $0.0586
    • 10000 $0.0561
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    1SS374(TE85L,F) 2,230 1,000
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    • 1000 $0.0731
    • 10000 $0.0731
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    Quest Components 1SS374(TE85L,F) 1,784
    • 1 $0.41
    • 10 $0.41
    • 100 $0.1845
    • 1000 $0.123
    • 10000 $0.123
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    Chip1Stop 1SS374(TE85L,F) Cut Tape 5,950
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    • 100 $0.0607
    • 1000 $0.0469
    • 10000 $0.0424
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    Toshiba America Electronic Components 1SS374(TE85LF)

    Diode Schottky Barrier 15V 0.1A 3-Pin TO-236MOD Embossed T/R - Tape and Reel (Alt: 1SS374(TE85L,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS374(TE85LF) Reel 3,000
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    Avnet Asia 1SS374(TE85LF) 24 Weeks 3,000
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    Toshiba America Electronic Components 1SS374

    RECTIFIER DIODE, SCHOTTKY, 2 ELEMENT, 0.1A, 15V V(RRM), SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS374 2,353
    • 1 $0.14
    • 10 $0.14
    • 100 $0.0875
    • 1000 $0.063
    • 10000 $0.063
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    1SS374 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS374 Kexin High Speed Switching Application Original PDF
    1SS374 Toshiba Japanese - Diodes Original PDF
    1SS374 Toshiba shottky barrier diode Original PDF
    1SS374 TY Semiconductor High Speed Switching Application - SOT-23 Original PDF
    1SS374 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS374 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS374 Toshiba DIODE Scan PDF
    1SS374(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA S-MINI Original PDF

    1SS374 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS374 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original
    1SS374 OT-23 PDF

    marking n9

    Abstract: diode marking N9 sot-23 N9 1SS374 SOT23 n9
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS374 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original
    1SS374 OT-23 marking n9 diode marking N9 sot-23 N9 1SS374 SOT23 n9 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS374 O-236MOD SC-59 100mA PDF

    1SS374

    Abstract: No abstract text available
    Text: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original
    1SS374 O-236 1SS374 PDF

    1SS374

    Abstract: No abstract text available
    Text: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS374 1SS374 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit in mm Small package Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS374 O-236Mused PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original
    1SS374 O-236MOD SC-59mitation, PDF

    1SS374

    Abstract: No abstract text available
    Text: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm Small package Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    1SS374 1SS374 PDF

    1SS374

    Abstract: No abstract text available
    Text: 1SS374 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS374 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA


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    1SS374 236MOD 100mA 1SS374 PDF

    1SS374

    Abstract: No abstract text available
    Text: 1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original
    1SS374 O-236MOD SC-59 1SS374 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original
    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original
    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    Untitled

    Abstract: No abstract text available
    Text: R1290K Series Triple Output DC/DC Converter for LCD/CCD The R1290K Series are triple output CMOS-based step-up/inverting DC/DC converters. R1290K consists of the inductor type step-up DC/DC converter DC/DC1 with an internal 2A Nch. driver and charge pump type positive/negative DC/DC converters (DC/DC2,


    Original
    R1290K 700kHz) 180kHz Room403, Room109, PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original
    02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original
    2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS374 T O SH IB A TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCH O TTKY BARRIER TYPE Unit in mm + 0.5 8.5 0.3 • • + 0.2 5 1.5 - 0 .1 5 Small Package Low Forward Voltage : Vp 2 = 0.23V (TYP.) @Ijr = 5mA I- -I o' o + MAXIM UM RATINGS (Ta = 25°C)


    OCR Scan
    1SS374 SS374 PDF

    1SS374

    Abstract: No abstract text available
    Text: TOSHIBA 1SS374 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0 .5 Z .5 - 0 .3 • • + 0 .3 5 1 .5 -0 .1 5 Small Package Low Forward Voltage : Vjr 2 = 0*23V (TYP.) @Ijr = 5mA h + I -o - UNIT


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    1SS374 1SS374 PDF

    1SS374

    Abstract: No abstract text available
    Text: TOSHIBA 1SS374 TO SHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE HIGH SPEED SW ITCHING APPLICATIO N • Small Package • Low Forward Voltage : Vp 2 —0.23V (TYP.) @Ijr = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING U N IT VRM 15 V Reverse Voltage


    OCR Scan
    1SS374 1SS374 PDF

    H9610

    Abstract: No abstract text available
    Text: 1SS374 T O SH IB A TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCH O TTKY BARRIER TYPE Unit in mm + 0.5 8.5 0.3 • • + 0.2 5 1.5 - 0 .1 5 Small Package Low Forward Voltage : Vp 2 = 0.23V (TYP.) @Ijr = 5mA I« , "I o' o +


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    1SS374 SS374 H9610 PDF

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


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    OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 PDF

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan
    1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B PDF