EMCORE VCSEL
Abstract: 87109 1x12-Multimode-VCSEL-Array vcsel array
Text: Gigarray with OxideGuide™ 1x12 Multimode VCSEL Array Electro-Optical Characteristics (T=25°C, single element, unless otherwise stated) Parameter Peak Wavelength Spectral Width Peak Wavelength Temperature Coefficient o o (25 C-80 C) Threshold Current
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Untitled
Abstract: No abstract text available
Text: TSA-8B12-000 High Performance Oxide-Confined VCSEL FEATURES: • 1x12 array configuration. • Capable to run data rate of 2.5/3.125 Gbps per channel. • Planar surface structure for non-hermetical applications. • Low threshold current to enhance device reliability.
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TSA-8B12-000
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VCSEL array, 850nm
Abstract: VCSEL array, 850nm, multi-mode Avalon Photonics APA4101040000 1x12 VCSEL avalon-photonics APA4101080000 APA4101120000 vcsel array
Text: N x 10 Gbps Multi-Mode VCSEL Array March 2003 Preliminary Datasheet Mechanical Solder Pad Features • 850nm wavelength range wavelength • High uniformity 480 1x8 and • 1x4, 1x12 arrays threshold • Low current rates • Data up to 12.5 Gbps bondable,
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850nm
APA4101040000
APA4101080000
APA4101120000
VCSEL array, 850nm
VCSEL array, 850nm, multi-mode
Avalon Photonics
APA4101040000
1x12 VCSEL
avalon-photonics
APA4101080000
APA4101120000
vcsel array
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Untitled
Abstract: No abstract text available
Text: AXT PRODUCT INFORMATION Preliminary 850 nm two-top contact 1x12 oxide VCSEL Specs High-speed datacom & general purpose, >2.5Gbps Dimension (3100)X(460)X(150) µm³ Parts number: VX-CA1C 1. Optical and Electrical Characteristics Parameter Symbol Min. TYP.
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AP-A41-0104-0000
Abstract: VCSEL array, 850nm VCSEL array, 850nm, multi-mode vcsel array AP-A41-0108-0000
Text: N x 10 Gbps Multi-Mode VCSEL Array November 2004 Preliminary Datasheet Mechanical Solder Pad Features • 850nm wavelength range wavelength • High uniformity 480 1x8 and • 1x4, 1x12 arrays threshold • Low current rates • Data up to 12.5 Gbps bondable,
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850nm
AP-A41-0104-0000
AP-A41-0108-0000
AP-A41-0112-0000
VCSEL array, 850nm
VCSEL array, 850nm, multi-mode
vcsel array
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VCSEL-ULM850-14-TT-F
Abstract: No abstract text available
Text: 14 Gbps VCSEL 850 nm 1x4 1x12 chip Vertical Cavity Surface-Emitting Laser Cathode on top side Unsealed 85% r.H./85°C certified Suitable for wirebond and flipchip process Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip Temperature = 25°C unless otherwise stated.
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Ith25
ULM850-14-TT-N0104Y
ULM850-14-TT-N0112Y
VCSEL-ULM850-14-TT-F
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3068
Abstract: VG2B-7810 ARRAY VCSEL
Text: 48400 Fremont Blvd. Fremont, CA 94538 Tel: 510 445-3068 x244 Fax: (510) 445-3060 Low Threshold 30 Gbps 850 nm 1x12 Array VCSEL Part Number: VG2B-7810 Applications: 30 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max.
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VG2B-7810
3068
VG2B-7810
ARRAY VCSEL
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VG1C
Abstract: No abstract text available
Text: 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: 510 445-3068 x 244 Fax: (510) 445-3060 15 Gbps 1x12 Array 850 nm VCSEL Part Number: VG1C-7800 Applications: 15 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max. Forward Current
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VG1C-7800
VG1C
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V850-2093-002
Abstract: 1310nm fiber optic for 10Gbps VCSEL array driver Finisar 1x12 VCSEL VCSEL array, 850nm 10GBPS 850NM T-25 laser DFB 1550nm 10mW 1310nm VCSEL transceivers
Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2092-002, V850-2093-002 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The V850-209x-002 are high-performance 850 nm VCSEL Vertical Cavity
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10GBPS
850NM
V850-2092-002,
V850-2093-002
V850-209x-002
1-866-MY-VCSEL
V850-2093-002
1310nm fiber optic for 10Gbps
VCSEL array driver
Finisar 1x12 VCSEL
VCSEL array, 850nm
T-25
laser DFB 1550nm 10mW
1310nm VCSEL transceivers
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vcsel array
Abstract: No abstract text available
Text: 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: 510 445-3068 x 244 Fax: (510) 445-3060 30 Gbps 1x12 Array 850 nm VCSEL Part Number: VG2C-7800 Applications: 30 Gbps aggregate speed Absolute Maximum Ratings (T = 25°C): Parameter Symbol Unit Min. Max. Forward Current
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VG2C-7800
vcsel array
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ULM850-14-TT-N0112U
Abstract: ULM850-14-TT-N0101U
Text: 14 Gbps VCSEL 850 nm 1x1/4/12 chip Vertical Cavity Surface-Emitting Laser 1 Cathode on top side 1 Unsealed 85% r.H./85°C certified 1 1x1, 1x4, 1x12 chips 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS
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1x1/4/12
ULM850-14-TT-N0101U
ULM850-14-TT-N0112U
ULM850-14-TT-N0104U
ULM850-14-TT-N0112U
ULM850-14-TT-N0101U
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS V850-2092-002, V850-2093-002 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The V850-209x-002 are high-performance 850 nm VCSEL Vertical Cavity
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10GBPS
850NM
V850-2092-002,
V850-2093-002
V850-209x-002
1-866-MY-VCSEL
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VCSEL array, 850nm flip
Abstract: VCSEL array, 850nm, flip chip amplifier CV 203 VCSEL array, 850nm GaAs array, 850nm PIN photodiode 850nm LX3044 LX3045 LX3046 PIN PHOTO DIODE
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
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LX3044/45/46
LX304X
LX3044
LX3045,
LX3046,
50ohm
LX3045
LX3046
VCSEL array, 850nm flip
VCSEL array, 850nm, flip chip
amplifier CV 203
VCSEL array, 850nm
GaAs array, 850nm
PIN photodiode 850nm
LX3045
LX3046
PIN PHOTO DIODE
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amplifier CV 203
Abstract: VCSEL array, 850nm flip GaAs array, 850nm vcsel array Photo Diode
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
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LX3044/45/46
850nm
LX304X
LX3044
LX3045
LX3046
amplifier CV 203
VCSEL array, 850nm flip
GaAs array, 850nm
vcsel array
Photo Diode
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Untitled
Abstract: No abstract text available
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
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LX3044/45/46
LX304X
LX3044
LX3045,
LX3046,
50ohm
LX3045
LX3046
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Untitled
Abstract: No abstract text available
Text: N x 3.125 Gbps Multi-Mode VCSEL Array November 2004 80 µm 105 µm 125 µm Features • 250 µm 850nm wavelength range • High wavelength uniformity rates • Data up to 4.25 Gbps • 980 µm for 1x4 Low threshold current 1980 µm for 1x8 2980 µm for 1x12
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850nm
AP-A72-0102-0000
850nm
AP-A72-0104-0000
AP-A72-0108-0000
AP-A72-0112-0000
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amplifier CV 203
Abstract: VCSEL array, 850nm flip GaAs array, 850nm diode array die VCSEL array, 850nm, flip chip
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
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LX3044/45/46
850nm
LX304X
LX3045
LX3046
145um
450um
amplifier CV 203
VCSEL array, 850nm flip
GaAs array, 850nm
diode array die
VCSEL array, 850nm, flip chip
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VCSEL array, 850nm flip
Abstract: No abstract text available
Text: LX3044/45/46 10.3 Gbps Coplanar GaAs PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS PRELIMINARY KEY FEATURES DESCRIPTION The device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. The LX304X family of photo diodes
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LX3044/45/46
850nm
LX304X
LX3044
LX3045
LX3046
VCSEL array, 850nm flip
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100C
Abstract: VG2A-7800
Text: th 50, Lung-Yuan 7 Road, Lung-Tan Tao-Yuan Hsien, TAIWAN Tel: 03 409-1335 x230/235 Fax: (03) 409-1339 48400 Fremont Blvd. Fremont, CA 94538 USA Tel: (510) 445-3068 x244 Fax: (510) 445-3060 30 Gbps 850 nm VCSEL 1x12 Array Data Sheet Part Number: VG2A-7800
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x230/235
VG2A-7800
100C
VG2A-7800
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VCSEL array, 850nm
Abstract: VCSEL array, 850nm, multi-mode Avalon Photonics 1x8APA7201120000 850nm VCSEL application avalon-photonics APA7201020000 APA7201040000 APA7201080000 APA7201120000
Text: N x 3.125 Gbps Multi-Mode VCSEL Array March 2003 80 µm 105 µm 125 µm Features • 250 µm 850nm wavelength range • High wavelength uniformity rates • Data up to 3.5 Gbps • 980 µm for 1x4 Low threshold current 1980 µm for 1x8 2980 µm for 1x12 • Ordering information
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850nm
APA7201020000
APA7201040000
APA7201080000
APA7201120000
850nm
VCSEL array, 850nm
VCSEL array, 850nm, multi-mode
Avalon Photonics
1x8APA7201120000
850nm VCSEL application
avalon-photonics
APA7201020000
APA7201040000
APA7201080000
APA7201120000
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.
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10GBPS
850NM
HFE8004-103,
HFE8012-103
HFE80xx-103
1-866-MY-VCSEL
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HFE8004-103
Abstract: VCSEL die bonding VCSEL array common anode VCSEL array, 850nm 10GBPS 850NM HFE8012-103 T-25 laser DFB 1550nm 10mW VCSEL array driver
Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.
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10GBPS
850NM
HFE8004-103,
HFE8012-103
HFE80xx-103
1-866-MY-VCSEL
HFE8004-103
VCSEL die bonding
VCSEL array common anode
VCSEL array, 850nm
HFE8012-103
T-25
laser DFB 1550nm 10mW
VCSEL array driver
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VCSEL array common anode
Abstract: VCSEL die bonding VCSEL array, 850nm HFE8012-103 Finisar 1x12 VCSEL
Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.
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10GBPS
850NM
HFE8004-103,
HFE8012-103
HFE80xx-103
1-866-MY-VCSEL
VCSEL array common anode
VCSEL die bonding
VCSEL array, 850nm
HFE8012-103
Finisar 1x12 VCSEL
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Finisar 1x12 VCSEL
Abstract: VCSEL array common anode VCSEL array, 850nm
Text: DATA SHEET 10GBPS 850NM VCSEL ARRAYS HFE8004-103, HFE8012-103 FEATURES: 850nm cathode common VCSEL array Capable of 10Gbps per channel modulation Fully tested and Burned in with STABILAZETM process 1x4 and 1x12 version The HFE80xx-103 are high-performance 850 nm VCSEL Vertical Cavity SurfaceEmitting Laser array die optimized for high-speed data communications.
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10GBPS
850NM
HFE8004-103,
HFE8012-103
HFE80xx-103
1-866-MY-VCSEL
Finisar 1x12 VCSEL
VCSEL array common anode
VCSEL array, 850nm
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