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    C246

    Abstract: IXTK33N50 C-246
    Text: g ix Y s High Current MegaMOS FET IXTK33N50 V DSS D cont p DS(on) = 500 V = 33 A = 0.17 £2 N-Channel Enhancement Mode Preliminary data Symbol Test conditions vDSS Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS= 1.0 Vos v QSM Maximum ratings M £i Continuous


    OCR Scan     		PDF IXTK33N50 O-264 C2-46 1XTK33NS0 C2-47 C246 IXTK33N50 C-246