VDD33
Abstract: P0C2102 VDD25 N0FPGA0VDD2505
Text: 2 3 R5 P0R3302 0.1uF P0D40A C16 LED D4 3.3V PowerSupply 10uF Ceramic 0805 VDD25_5 N0FPGA0VDD2505 FPGA_VDD25_5 C17 0.1uF P0C1702 P0C1701 LED C15 VDD25_5 P0R602 P0C1602 P0C1601 P0R3202 C14 D3 P0R601 P0C1502 P0C1501 R32 P0R3201 2.2K R33 P0R3301 2.2K 2.2K 2.2K
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P0R3302
P0D40A
N0FPGA0VDD2505
P0C1702
P0C1701
P0R602
P0C1602
P0C1601
P0R3202
P0R601
VDD33
P0C2102
VDD25
N0FPGA0VDD2505
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1223 digital transistor
Abstract: UNR1222 UNR1221 UNR1223 UNR1224
Text: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor 2.5±0.1 6.9±0.1 ● ● ● • (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ UNR1221 UNR1222 UNR1223 UNR1224 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ
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UNR1221/1222/1223/1224
UN1221/1222/1223/1224)
UNR1221
UNR1222
UNR1223
UNR1224
1223 digital transistor
UNR1222
UNR1221
UNR1223
UNR1224
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Untitled
Abstract: No abstract text available
Text: DTC023E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 2.2kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of
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DTC023E
100mA
100mA
DTC023EM
DTC023EEB
SC-105AA)
SC-89)
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Untitled
Abstract: No abstract text available
Text: DTA023E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of
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DTA023E
-100mA
-100mA
DTA023EM
DTA023EEB
SC-105AA)
SC-89)
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UN4221
Abstract: UN4222 UN4223 UN4224
Text: Transistors with built-in Resistor UN4221/4222/4223/4224 Silicon NPN epitaxial planer transistor Unit: mm 3.0±0.2 4.0±0.2 For digital circuits ● ● ● ● marking R1 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ UN4221 UN4222 UN4223 UN4224 (R2) 2.2kΩ 4.7kΩ 10kΩ
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UN4221/4222/4223/4224
UN4221
UN4222
UN4223
UN4224
UN4221
UN4222
UN4223
UN4224
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Untitled
Abstract: No abstract text available
Text: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ
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DTA123E
-100mA
-100mA
DTA123EM
DTA123EE
SC-105AA)
OT-416
SC-75A)
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Untitled
Abstract: No abstract text available
Text: DTC123E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 50V DTC123EM DTC123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ
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DTC123E
100mA
100mA
DTC123EM
DTC123EE
SC-105AA)
OT-416
SC-75A)
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low voltage output NPN silicon epitaxial planar
Abstract: ta 1223 833H-1C-C-12VDC SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE NPN Silicon Epitaxial Planar Transistor UNR1221 UNR1222 UNR1223 UNR1224 1223 digital transistor
Text: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor (1.0) (1.5) R 0.9 ● ● • (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 2.4±0.2 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (0.85) 0.55±0.1 3 Absolute Maximum Ratings (Ta=25˚C)
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UNR1221/1222/1223/1224
UN1221/1222/1223/1224)
UNR1221
UNR1222
UNR1223
UNR1224
low voltage output NPN silicon epitaxial planar
ta 1223
833H-1C-C-12VDC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
NPN Silicon Epitaxial Planar Transistor
UNR1221
UNR1222
UNR1223
UNR1224
1223 digital transistor
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DIN 6784
Abstract: BCR153 BCR153F BCR153L3 BCR153T BCR153U SC74 SC75
Text: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3
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BCR153.
BCR153U:
BCR153F/L3
BCR153T
BCR153U
EHA07183
EHA07173
BCR153L3
DIN 6784
BCR153
BCR153F
BCR153L3
BCR153T
BCR153U
SC74
SC75
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Untitled
Abstract: No abstract text available
Text: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ BCR103F BCR103L3/T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR103F WAs
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BCR103.
BCR103F
BCR103L3/T
EHA07184
BCR103L3
BCR103T
dissipationBCR103F,
BCR103L3,
BCR103T,
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Untitled
Abstract: No abstract text available
Text: DTC123E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors AEC-Q101 Qualified l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 2.2kΩ DTC123EM DTC123EMFHA DTC123EE DTC123EEFRA 2.2kΩ (SC-105AA) SOT-416(SC-75A) VMT3 EMT3
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DTC123E
100mA
AEC-Q101
100mA
DTC123EM
DTC123EMFHA
DTC123EE
DTC123EEFRA
SC-105AA)
OT-416
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Untitled
Abstract: No abstract text available
Text: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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BCR103.
BCR103/F
BCR103L3/T
BCR103U
EHA07184
EHA07174
BCR103
BCR103F
BCR103L3
BCR103T
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Untitled
Abstract: No abstract text available
Text: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors AEC-Q101 Qualified l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EMFHA DTA123EE DTA123EEFRA (SC-105AA)
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DTA123E
-100mA
AEC-Q101
-100mA
DTA123EM
DTA123EMFHA
DTA123EE
DTA123EEFRA
SC-105AA)
OT-416
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marking code TS
Abstract: No abstract text available
Text: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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BCR103.
BCR103/F
BCR103L3/T
BCR103U
EHA07184
EHA07174
BCR103
BCR103F
BCR103L3
BCR103T
marking code TS
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Untitled
Abstract: No abstract text available
Text: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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BCR153.
BCR153/F/L3
BCR153T
BCR153U
EHA07183
EHA07173
BCR153
BCR153U
BCR153L3
BCR153T
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BCR153F
Abstract: BCR108T BCR153 BCR153L3 BCR153T BCR153U SC75 SCD80
Text: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R 2=2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3
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BCR153.
BCR153U:
BCR153F/L3
BCR153T
EHA07183
BCR153F
BCR153L3
BCR153F
BCR108T
BCR153
BCR153L3
BCR153T
BCR153U
SC75
SCD80
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BCR10
Abstract: BCR103 BCR103F BCR103L3 BCR103T BCR103U SC75
Text: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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BCR103.
BCR103/F
BCR103L3/T
BCR103U
EHA07174
EHA07184
BCR103
BCR103F
BCR103L3
BCR103T
BCR10
BCR103
BCR103F
BCR103L3
BCR103T
BCR103U
SC75
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SC-105AA
Abstract: SE-b2 resistor 2012 rohm DTA123E 2012 footprint dimension MARKING CODE 1616 SOT-346 saa1
Text: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 2.2k 2.2k IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN IN GND GND DTA123EM (SC-105AA) UMT3 DTA123EE SOT-416 (SC-75A)
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DTA123E
-100mA
100mA
DTA123EM
SC-105AA)
DTA123EE
OT-416
SC-75A)
DTA123EUA
OT-323
SC-105AA
SE-b2
resistor 2012 rohm
2012 footprint dimension
MARKING CODE 1616 SOT-346
saa1
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1223 digital transistor
Abstract: UNR1221 UNR1222 UNR1223 UNR1224
Text: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor ● ● ● • UNR1221 UNR1222 UNR1223 UNR1224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (1.0) 0.45±0.05 0.55±0.1 3 2 (2.5) Parameter Symbol
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UNR1221/1222/1223/1224
UN1221/1222/1223/1224)
UNR1221
UNR1222
UNR1223
UNR1224
1223 digital transistor
UNR1221
UNR1222
UNR1223
UNR1224
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BCR103
Abstract: BCR103F BCR103L3 BCR103T BCR108T E6327 SC75
Text: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ BCR103F BCR103L3/T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR103F WAs
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BCR103.
BCR103F
BCR103L3/T
EHA07184
BCR103L3
BCR103T
BCR103
BCR103F
BCR103L3
BCR103T
BCR108T
E6327
SC75
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Q62702-C2370
Abstract: No abstract text available
Text: BCR 503 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ Type Marking Ordering Code Pin Configuration BCR 503 XAs 1=B Q62702-C2370 Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2370
OT-23
Nov-27-1996
Q62702-C2370
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BCR153U
Abstract: SC74
Text: BCR153U PNP Silicon Digital Transistor Preliminary data 5 Switching circuit, inverter, interface circuit, 4 6 driver circuit Two galvanic internal isolated Transistors 3 with good matching in one package 2 Built in resistor (R 1=2.2k, R2=2.2k) 1
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BCR153U
VPW09197
EHA07174
Aug-27-2001
BCR153U
SC74
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UNR4221
Abstract: UNR4222 UNR4223 UNR4224
Text: Transistors with built-in Resistor UNR4221/4222/4223/4224 UN4221/4222/4223/4224 Unit: mm 4.0±0.2 3.0±0.2 Silicon NPN epitaxial planer transistor For digital circuits ● ● ● ● UNR4221 UNR4222 UNR4223 UNR4224 1 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ
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UNR4221/4222/4223/4224
UN4221/4222/4223/4224)
UNR4221
UNR4222
UNR4223
UNR4224
UNR4221
UNR4222
UNR4223
UNR4224
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 553 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=2.2k£i, Ft2=2.2k£2 ^ FI 4 a r ^ r z Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371
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OCR Scan
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Q62702-C2371
OT-23
fl235bG5
0235bD
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