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    2.4GHZ LNB Search Results

    2.4GHZ LNB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL9491ERZ Renesas Electronics Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications Visit Renesas Electronics Corporation
    ISL9491ERZ-T Renesas Electronics Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications Visit Renesas Electronics Corporation
    ISL9491AERZ Renesas Electronics Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications, QFN, /Tube Visit Renesas Electronics Corporation
    ISL9492ERZ-T Renesas Electronics Corporation Single Output LNB Supply and Control Voltage Regulator with I2C Interface for Satellite Set-Top Box Designs Visit Renesas Electronics Corporation
    ISL6421AERZ-T Renesas Electronics Corporation Single Output LNB Supply and Control Voltage Regulator with I2C Interface for Advanced Satellite Set-top Box Designs Visit Renesas Electronics Corporation

    2.4GHZ LNB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AN11102 BFU725F/N1 2.4 GHz LNA evaluation board Rev. 1 — 28 July 2011 Application note Document information Info Content Keywords LNA, 2.4GHz, BFU725F/N1 Abstract This document explains the BFU725F/N1 2.4GHz LNA evaluation Board. AN11102 NXP Semiconductors


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    PDF AN11102 BFU725F/N1 BFU725F/N1 AN111.

    RF LNB C band chipset

    Abstract: rfw102 RFW488C RFW24-A1 RFW488 white noise Generator 1GHz RFW102 front end RFW24 RFW-102 RF transceiver 2.4GHz wireless charging
    Text: Datasheet October 2002 Rev. 1.03 RFWaves Ltd. RFW102 ISM Transceiver Chipset Key Features • • • • • • • • Designed for short range wireless communication in 2.4GHz - world wide license free band Data rate – up to 1Mb per second Simple interface – 3 line digital interface


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    PDF RFW102 -80dBm RF LNB C band chipset RFW488C RFW24-A1 RFW488 white noise Generator 1GHz RFW102 front end RFW24 RFW-102 RF transceiver 2.4GHz wireless charging

    Untitled

    Abstract: No abstract text available
    Text: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz


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    PDF BFP410 AEC-Q101 OT343

    433MHZ amplifier 1w

    Abstract: 433 mhz rf amplifier module 5w Smart RF04EB uhf linear amplifier module 5w ic sma 4038 ND 433 A TA31275EVKIT-433 smartrf04eb UGWW2USHN33A dkrn
    Text: RF Wireless Evaluation Kit The Evaluation kits allow for a detailed evaluation of the Transceivers and Receiver. They enable testing of the device’s RF performance and require no additional support circuitry. The RF input uses a 50Ω matching network and an SMA connector for convenient connection to test


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    PDF TA31275EVKIT TA31275M TA32305M TA32305EVKIT 16-QSOP 20-QSOP ZNBG4000Q16CT-ND ZNBG6000Q20CT-ND ZNBG4000Q16TR-ND ZNBG6000Q20TR-ND 433MHZ amplifier 1w 433 mhz rf amplifier module 5w Smart RF04EB uhf linear amplifier module 5w ic sma 4038 ND 433 A TA31275EVKIT-433 smartrf04eb UGWW2USHN33A dkrn

    bfp410

    Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


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    PDF BFP410 OT343 bfp410 DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB

    Untitled

    Abstract: No abstract text available
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


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    PDF BFP410 OT343

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


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    PDF

    2.4ghz lnb

    Abstract: 1008CS-330XMBC ABA-32563 ABA-5X563 s2p aba ABA-51563 ABA-54563 ABA5X563 GRM40X7R102K50 ABA515563
    Text: Using cascaded ABA series for high gain and high isolation amplifier up to 2400MHz Application Note 5227 Introduction Circuit Design This application note describes a two-stage cascaded amplifier using Avago Technologies Broadband Amplifier ABA silicon RF ICs. Avago Technologies


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    PDF 2400MHz ABA-54563 ABA-5X563 5989-2987EN 2.4ghz lnb 1008CS-330XMBC ABA-32563 s2p aba ABA-51563 ABA5X563 GRM40X7R102K50 ABA515563

    Untitled

    Abstract: No abstract text available
    Text: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP

    ASR-10SS

    Abstract: YAGEO RC0805 raytheon klystron YAGEO RC0402 BGA2715-17 2.4ghz lnb 92F566 BUELA30K gps glonass BGA6489
    Text: RF 手册 第 5 版 附录 Philips Semiconductors RF 产品的生产与设计手册 RF 手册附录 第5版 RF 产品的产品和设计手册 2004 年 10 月 4322 252 06394 RF 手册 附录 Koninklijke Philips Electronics N.V. 2004 年 10 月 1 of 36 RF 手册 第 5 版 附录


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    PDF BGA2715-17 BGA6x89 ASR-10SS YAGEO RC0805 raytheon klystron YAGEO RC0402 BGA2715-17 2.4ghz lnb 92F566 BUELA30K gps glonass BGA6489

    Untitled

    Abstract: No abstract text available
    Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Text: BFP740ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-08 RF & Protection Devices Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    PDF BFP740ESD OT343 OT343-PO OT343-FP BFP740ESD: OT323-TP MARKING CODE T7s MARKINGCODET7s

    VCO 9GHZ 10GHZ

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


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    PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP VCO 9GHZ 10GHZ RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor

    BFP640ESD

    Abstract: RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


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    PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP BFP640ESD RF TRANSISTOR 10GHZ C166 JESD22-A114 NF50 Germanium Transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


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    PDF BFP720ESD OT343 OT343-PO OT343-FP BFP720ESD: OT323-TP

    Untitled

    Abstract: No abstract text available
    Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


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    PDF BFP640ESD OT343 OT343-PO OT343-FP BFP640ESD: OT323-TP

    RF TRANSISTOR 10GHZ

    Abstract: BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters
    Text: BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


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    PDF BFP740ESD OT343 OT343-PO OT343-FP BFP740ESD: OT323-TP RF TRANSISTOR 10GHZ BFP740ESD NXP Bluetooth IC C166 JESD22-A114 NF50 vxWORKS Germanium Transistor gummel transistor RF S-parameters

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor
    Text: 4th edition RF Manual, appendix Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4th edition March 2004 APPENDIX / documentation/rf_manual Document number: 4322 252 06388


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    PDF BF1107/8 BGA2715-17 BGA6589 MOSFET TRANSISTOR SMD MARKING CODE nh ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP840FESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BFP840FESD BFP840FESD:

    Untitled

    Abstract: No abstract text available
    Text: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    PDF BFP640FESD BFP640FESD:

    Untitled

    Abstract: No abstract text available
    Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BFR840L3RHESD BFR840L3RHESD:

    BFP840F

    Abstract: Germanium Transistor spice gummel LNA ku-band
    Text: BFP840FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-03 RF & Protection Devices Edition 2013-04-03 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    PDF BFP840FESD BFP840FESD: BFP840F Germanium Transistor spice gummel LNA ku-band

    BFR840L3RHESD

    Abstract: Germanium Transistor LNA ku-band
    Text: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.


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    PDF BFR840L3RHESD BFR840L3RHESD: BFR840L3RHESD Germanium Transistor LNA ku-band

    rf transistor frequency 10.0GHz gain 20 dB

    Abstract: 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band
    Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.


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    PDF BFR840L3RHESD BFR840L3RHESD: rf transistor frequency 10.0GHz gain 20 dB 10.0GHZ TRANSISTOR AMPLIFIER ku-band lnb SiGe Microsystems LNA ku-band