mgfs44v2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS44V2735
MGFS44V2735
-45dBc
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MGFS45V2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS44V2735
MGFS44V2735
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Untitled
Abstract: No abstract text available
Text: Part Number: ILD2735M120 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET High Power Gain Excellent thermal stability Gold Metal Part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 – 3.5 GHz instantaneous
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ILD2735M120
ILD2735M120
300us
ILD2735M120-REV-PR1-DS-REV-A
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ROGERS DUROID
Abstract: BLS6G2735L-30
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
ROGERS DUROID
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Untitled
Abstract: No abstract text available
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 1 — 11 October 2011 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
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Untitled
Abstract: No abstract text available
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
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BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
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Untitled
Abstract: No abstract text available
Text: HMC279MS8G v02.0701 GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop
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HMC279MS8G
HMC279MS8G
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ATR3515
Abstract: ATR3515-PEP ATR3515-PEQ driver amplifier at 5GHz for Wlan
Text: Features • • • • • • • Frequency Range 4.9 GHz to 5.9 GHz Supply-voltage 2.7 V to 3.6 V 3.5% EVM at 19 dBm Output Power at 54 Mbit/s OFDM 25.5 dBm P1dB On-chip Power Detector with 25 dBm Dynamic Range Power-down Mode and Biasing Control Low Profile Lead-free Plastic Package QFN16 4 x 4 × 0.9 mm
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QFN16
ATR3515
4514I
ATR3515
ATR3515-PEP
ATR3515-PEQ
driver amplifier at 5GHz for Wlan
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2904 SMD IC
Abstract: SMD m7 spice model diode electret condenser microphone preamplifier LMC662 equivalent spice model smd transistor m6 LM397 h LM6142 model SPICE LM146 LM614 8 pin lmc6762
Text: Precision, low voltage, low power amplifier and comparator products Selection guide Winter 2004 RF detection and power loop control Part number Operating voltage range [V] Supply current typ. [mA] Input frequency range [GHz] Slew Band- Detection Detection Output Shut- Number Package Temp
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LMV248
LQ-16
LMV243
LMV242
LMC6041
2904 SMD IC
SMD m7 spice model diode
electret condenser microphone preamplifier
LMC662 equivalent spice model
smd transistor m6
LM397 h
LM6142 model SPICE
LM146
LM614 8 pin
lmc6762
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TD173
Abstract: No abstract text available
Text: TD/TN Series Microwave Noise Tubes & Noise Sources Features • Excess noise ratios ENR : up to 20dB • Broad bandwidth • Excellent long term stability • Life up to 20,000 hours • AC, DC, or pulsed operation Description High Energy Devices’ TD Series of gas discharge
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MGFS45V2735
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
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MGFS45V2735
Abstract: 051 166
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
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051 166
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Untitled
Abstract: No abstract text available
Text: TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625, TLV262xA FAMILY OF LOW-POWER WIDE BANDWIDTH SINGLE SUPPLY OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS251B – DECEMBER 2000 – REVISED APRIL 2001 D D + – DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs
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TLV2620,
TLV2621,
TLV2622,
TLV2623,
TLV2624,
TLV2625,
TLV262xA
SLOS251B
OT-23
TLV2620/1)
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Untitled
Abstract: No abstract text available
Text: TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625, TLV262xA FAMILY OF LOW-POWER WIDE BANDWIDTH SINGLE SUPPLY OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS251B – DECEMBER 2000 – REVISED APRIL 2001 D D + – DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs
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TLV2620,
TLV2621,
TLV2622,
TLV2623,
TLV2624,
TLV2625,
TLV262xA
SLOS251B
OT-23
TLV2620/1)
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A2723
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2158T5K
PG2158T5K
A2723
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FMS2031-001
Abstract: FMS2031-001-EB FMS2031-001-TB FMS2031-001-TR
Text: Pilot Data Sheet 2.1 FMS2031-001 10 Watt GaAs Wide Band SPDT Switch Features: ANT 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz Low insertion loss, 0.5dB typ at 2.5GHz
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FMS2031-001
42dBm
35dBm
FMS2031-001
MIL-STD-1686
MILHDBK-263.
FMS2031-001-TR
FMS2031-001-TB
FMS2031-001-EB
FMS2031-001-EB
FMS2031-001-TB
FMS2031-001-TR
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GRM1555C1H2R2JZ35E
Abstract: GJM1555C1H5R6CB01E GRM1555C1H4R7JZ35E GJM1555C1H120JB01E
Text: AMPLIFIERS PRELIMINARY DATA SHEET SKY65111-348LF: ISM 600–1100 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram Optimized for 800–1100 MHz operation ● Output power greater than 33 dBm @915 MHz ● 3.5 V nominal operating voltage ● Integrated analog power control voltage, V
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SKY65111-348LF:
SKY65111-348LF
GRM1555C1H2R2JZ35E
GJM1555C1H5R6CB01E
GRM1555C1H4R7JZ35E
GJM1555C1H120JB01E
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FMS2031-001
Abstract: FMS2031-001-EB FMS2031-001-TB FMS2031-001-TR SPDT SWITCH 6 GHZ 1 WATT
Text: Production 3.0 FMS2031-001 10 Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ANT 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz Low insertion loss, 0.5dB typ at 2.5GHz
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FMS2031-001
42dBm
35dBm
FMS2031-001
MIL-STD-1686
MILHDBK-263.
FMS2031-001-TR
FMS2031-001-TB
FMS2031-001-EB
FMS2031-001-EB
FMS2031-001-TB
FMS2031-001-TR
SPDT SWITCH 6 GHZ 1 WATT
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MGFS45V2735
Abstract: No abstract text available
Text: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED G a As FET DESCRIPTION The M G FS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 G H z band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
25deg
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Untitled
Abstract: No abstract text available
Text: S e m i c o n d u c t o r tß L o w Voltage, L o w Power, R-to-R Output, 5 M H z Op A m p s General Description Guaranteed 2.5 V, 2.7 V and 5 V Performance Maximum VOS 3.5 mV Guaranteed VOS Temp. Drift 1 uW* C GBW product 2.7 V 5 MHz • ■ ■ ■ ■
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LMV821
LMV822
LMV821
LMV821/LMV822/LMV824
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MGFS44V2735
Abstract: Q-35 2.7 3.5 s band
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched
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MGFS44V2735
MGFS44V2735
-45dBc
20th/Jan.
Q-35
2.7 3.5 s band
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MX0912B250Y
Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4
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RZ1214B35Y
FO-57C
RZ1214B65Y
RZ1214B125Y
RX1214B150W
FO-91
RX1214B300Y
MX0912B250Y
RV2833B5X
RV3135B5X
RZ2731B16W
MRB11175Y
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