051 166
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
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051 166
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MGFS45V2735
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
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MGFS45V2735
Abstract: 051 166
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
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MGFS44V2735
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS44V2735 2.7 - 3.5GHz BAND 24W INTERNALLY MATCHED GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other
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MGFS44V2735
MGFS44V2735
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SMD phase shifter
Abstract: phase shifter ICs in SMD package AN0017
Text: Advance Information S-BAND 6-BIT DIGITAL PHASE-SHIFTER GaAs Monolithic Microwave IC P6 …P1 V V+ Control interface I Out P1 P2 P3 P4 P5 P6 UMS is developing a S-Band 2.7-3.5GHz monolithic 6 bit digital phase-shifter with a 0-360° range and offering a high phase accuracy. The typical RMS phase error is lower than 1°.
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AI10080169
AI1008
ES-CHP4012-98F
ES-CHP4012-QEG
SMD phase shifter
phase shifter ICs in SMD package
AN0017
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MGFS45V2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFS44V2735
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FMM5027VJ
Abstract: FMM5027
Text: FMM5027VJ MMIC Power Amplifier FEATURES • • • • • Wide Frequency Band: 0.8 to 3GHz Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz Wide Operating Temperature Range Hermetically Sealed Package DESCRIPTION
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FMM5027VJ
26dBm
FMM5027VJ
FMM5027
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mgfs44v2735
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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FMM5027VJ
Abstract: FMM5027
Text: FMM5027VJ MMIC Power Amplifier FEATURES • Wide Frequency Band: 0.8 to 3GHz • Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz • High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz • Wide Operating Temperature Range • Hermetically Sealed Package DESCRIPTION
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FMM5027VJ
26dBm
FMM5027VJ
FMM5027
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FMM5027
Abstract: FMM5027VJ fujitsu power amplifier GHz mmic case styles case style 511 mmic 557
Text: FMM5027VJ MMIC Power Amplifier FEATURES • • • • • Wide Frequency Band: 0.8 to 3GHz Medium Power: P1dB=26dBm Typ. @f=0.8 - 3GHz High Linear Gain: GL=19dB (Typ.)@ f=0.8 - 3GHz Wide Operating Temperature Range Hermetically Sealed Package DESCRIPTION
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FMM5027VJ
26dBm
FMM5027VJ
FCSI0598M200
FMM5027
fujitsu power amplifier GHz
mmic case styles
case style 511
mmic 557
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cu452A1F-2600-1TE2
Abstract: CSR BC4 bluetooth
Text: TDK RF Components for WiMAX Applications RF Components for Bluetooth Applications Ceramic Block Band Pass Filter for 700MHz, 2.3GHz, 2.5GHz, 2.5GHz & 3.5GHz Start Frequency MHz 700 2490 3230 3390 3590 Stop Frequency MHz 750 2710 3410 3660 3810 Ins. Loss dB MAX
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700MHz,
2x10x3
252450BT-7022B1
S0465D
S0486A
S0486B
S0486C
S0486D
DEA202450BT-7089C3
STLC2500
cu452A1F-2600-1TE2
CSR BC4 bluetooth
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Untitled
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A030MK
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and
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CGH35060F
CGH35060F
CGH3506
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GaN amplifier
Abstract: EGN35A180IV
Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A180IV
GaN amplifier
EGN35A180IV
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GRM1555C1H100JZ01B
Abstract: No abstract text available
Text: MGA-30316 3.3 -3.9GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30316 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-30316
MGA-30316
AV02-1064EN
GRM1555C1H100JZ01B
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GRM1555C1H100JZ01B
Abstract: 1128 dbm qfn qfn 32 stencil 16 pins qfn 3x3
Text: MGA-30316 3.3 -3.9GHz ½ Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ MGA-30316 is a high linearity ½ Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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MGA-30316
MGA-30316
AV02-1064EN
GRM1555C1H100JZ01B
1128 dbm qfn
qfn 32 stencil
16 pins qfn 3x3
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xm0830
Abstract: C54PF GaAs IC High Isolation Positive Control Switch 3.5GHZ
Text: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01C GaAs IC High Power SPDT Switch Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications. Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz
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XM0830SK-TL1301
DS0830SK-01C
35dBm
12pin
xm0830
C54PF
GaAs IC High Isolation Positive Control Switch 3.5GHZ
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XM0830SK-TL1301
Abstract: MURATA GRM155
Text: PRELIMINARY DATA SHEET XM0830SK-TL1301 DS0830SK-01B GaAs IC High Power SPDT Switch Applications AMPS, GPS, PCS, W-CDMA, TD-SCDMA, WiMAX and other RF applications. Features • Positive Voltage Control • Pin0.5dB @+2.6V .35dBm typ. @ 1-2GHz / 32.5dBm typ. @ 3.5GHz
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XM0830SK-TL1301
DS0830SK-01B
35dBm
12pin
XM0830SK-TL1301
MURATA GRM155
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EGN010MK
Abstract: 6 ghz amplifier 10w
Text: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz
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EGN010MK
3500MHz
3700MHz
EGN010MK
6 ghz amplifier 10w
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MGFS44V2735
Abstract: Q-35 2.7 3.5 s band
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched
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MGFS44V2735
MGFS44V2735
-45dBc
20th/Jan.
Q-35
2.7 3.5 s band
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MGFS45V2735
Abstract: No abstract text available
Text: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED G a As FET DESCRIPTION The M G FS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 G H z band amplifiers. The hermetically sealed metal-ceramic
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MGFS45V2735
MGFS45V2735
-45dBc
25deg
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n channel fet k 1118
Abstract: TGA8061
Text: TGA8061-SCC 100-MHz TO 3.5-GHz LOW-NOISE AMPLIFIER AP PR O VAL 5026 • 3-dB Bandwidth Exceeds 5 Octaves • 2.4-dB Noise Figure With Low Input and Output SWR • 18-dB G ain • 15-dBm Output Power at 1-dB Gain Compression • Operates From Single 12-V Supply
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TGA8061-SCC
100-MHz
18-dB
15-dBm
TGA8061
n channel fet k 1118
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