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    20.117 Search Results

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    20.117 Price and Stock

    Vishay Dale CRCW0201174RFNED

    RES SMD 174 OHM 1% 1/20W 0201
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    DigiKey CRCW0201174RFNED Cut Tape 27,380 1
    • 1 $0.1
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    CRCW0201174RFNED Digi-Reel 27,380 1
    • 1 $0.1
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    • 1000 $0.01214
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    CRCW0201174RFNED Reel 10,000 10,000
    • 1 -
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    • 10000 $0.00824
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    Vishay Dale CRCW020117R4FNED

    RES SMD 17.4 OHM 1% 1/20W 0201
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    DigiKey CRCW020117R4FNED Cut Tape 25,875 1
    • 1 $0.1
    • 10 $0.037
    • 100 $0.0204
    • 1000 $0.01241
    • 10000 $0.00924
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    Vishay Dale CRCW0201178RFNED

    RES SMD 178 OHM 1% 1/20W 0201
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    DigiKey CRCW0201178RFNED Cut Tape 25,472 1
    • 1 $0.1
    • 10 $0.038
    • 100 $0.0204
    • 1000 $0.01214
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    CRCW0201178RFNED Digi-Reel 25,472 1
    • 1 $0.1
    • 10 $0.038
    • 100 $0.0204
    • 1000 $0.01214
    • 10000 $0.00905
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    CRCW0201178RFNED Reel 10,000 10,000
    • 1 -
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    • 10000 $0.00812
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    Vishay Dale CRCW020117R8FNED

    RES SMD 17.8 OHM 1% 1/20W 0201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW020117R8FNED Cut Tape 13,915 1
    • 1 $0.1
    • 10 $0.037
    • 100 $0.0204
    • 1000 $0.01241
    • 10000 $0.00924
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    CRCW020117R8FNED Digi-Reel 13,915 1
    • 1 $0.1
    • 10 $0.037
    • 100 $0.0204
    • 1000 $0.01241
    • 10000 $0.00924
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    CRCW020117R8FNED Reel 10,000 10,000
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    Molex 0150201170

    CABLE FFC/FPC 45POS 0.5MM 5"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0150201170 Bulk 935 1
    • 1 $4.28
    • 10 $3.275
    • 100 $2.6103
    • 1000 $2.17284
    • 10000 $2.02102
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    20.117 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2011730004 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 4 CIRCUITS, SU Original PDF
    2011730006 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 6 CIRCUITS, SU Original PDF
    2011730008 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 8 CIRCUITS, SU Original PDF
    2011730010 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 10 CIRCUITS, S Original PDF
    2011730012 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 12 CIRCUITS, S Original PDF
    2011730014 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 14 CIRCUITS, S Original PDF
    2011730016 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 16 CIRCUITS, S Original PDF
    2011730018 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 18 CIRCUITS, S Original PDF
    2011730020 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 20 CIRCUITS, S Original PDF
    2011730022 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 22 CIRCUITS, S Original PDF
    2011730024 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 24 CIRCUITS, S Original PDF
    2011730104 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 4 CIRCUITS, SU Original PDF
    2011730106 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 6 CIRCUITS, SU Original PDF
    2011730108 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 8 CIRCUITS, SU Original PDF
    2011730110 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 10 CIRCUITS, S Original PDF
    2011730112 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 12 CIRCUITS, S Original PDF
    2011730114 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 14 CIRCUITS, S Original PDF
    2011730116 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 16 CIRCUITS, S Original PDF
    2011730118 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 18 CIRCUITS, S Original PDF
    2011730120 Molex Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - SLIM-GRID HEADER, 20 CIRCUITS, S Original PDF

    20.117 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62U8100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Insert 70ns Part Jul.25.2000 Final 11 Change the Notch Location of sTSOP


    Original     		HY62U8100B 128Kx8bit HY62U8100B 100ns PDF

    HY62U8200LST

    Abstract: No abstract text available
    Text: HY62V8200- I /HY62U8200-(I) Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(I) uses high performance CMOS process technology and


    Original     		HY62V8200- /HY62U8200- 256Kx8bit HY62U8200- 32pin 8x20mm HY62U8200LST PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS65C1024AL PRELIMINARY INFORMATION AUGUST 2002 128K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 55, 70 ns • Low active power: 50 mW typical • Low standby power: 100 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable


    Original     		IS65C1024AL 1050C 1250C 32-pin IS65C1024AL 072-word IS65C1024AL-55QA2 IS65C1024AL-55TA2 IS65C1024AL-70QA2 PDF

    TSOPI

    Abstract: No abstract text available
    Text: HY62V8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is


    Original     		HY62V8200B 256Kx8bit 32-sTSOPI-8X13 32-TSOPI -8X20 32pin TSOPI PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62U8100B Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8100B is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. The HY62U8100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is


    Original     		HY62U8100B 128Kx8bit 525mil 32pin PDF

    HY628100B-LLG55

    Abstract: HY628100B HY628100BLLG-55 128kx8bit HY628100BLT1-55
    Text: HY628100B Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed


    Original     		HY628100B 128Kx8bit 525mil 32pin 8x20mm HY628100B-LLG55 HY628100BLLG-55 HY628100BLT1-55 PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 32 Cover RX111 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		RX111 32-Bit RX100 R01UH0365EJ0100 PDF

    HY628100B-LLG55

    Abstract: No abstract text available
    Text: HY628100B Series 128Kx8bit CMOS SRAM Document Title 128K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Jul.14.2000 Final 11 Marking Information Add Revised - E.T -25~85°C , I.T (-40~85°C) Part Insert


    Original     		HY628100B 128Kx8bit HY628100B HY628100B-LLG55 PDF

    HY628100BLLG-55

    Abstract: HY628100B-LLG55 55NS BS62LV1029 BS62LV1029SC BS62LV1029SC-55 BS62LV1029STC BS62LV1029TC HY628100B E12855
    Text: APPROVED MANUFACTURERS LIST FOR WEB PARTS 650-0025 ITEM NUMBER -WEB PART DESCRIPTION IC SRAM 128K X 8 5V 55NS SOIC SMT REVISION HISTORY Rev D ECO # E12099 RELEASE TO WEB STORE. PREVIOUSLY ID'D AS 100-0007. Description of Change Proj Eng E E12855 APPROVE BRILLIANCE SEMICONDUCTOR. REMOVE OLD SOURCES.


    Original     		E12099 E12855 32pin 525mil 8x20mm HY628100BLLG-55 HY628100B-LLG55 55NS BS62LV1029 BS62LV1029SC BS62LV1029SC-55 BS62LV1029STC BS62LV1029TC HY628100B E12855 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62V8200 Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200 is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200 uses high performance CMOS process technology and designed for high speed low power circuit technology. It is


    Original     		HY62V8200 256Kx8bit 32-sTSOPI-8X13 32-TSOPI -8X20 32pin PDF

    38458

    Abstract: WLP0402 A004R RO4003 23136
    Text: VMMK-3413 25 - 45 GHz Directional Detector in SMT Package Data Sheet Description Features The VMMK-3413 is a small and easy-to-use, broadband, directional detector operating in various frequency bands from 25 to 45 GHz with typical insertion loss of 0.8 dB. It is


    Original     		VMMK-3413 VMMK-3413 AV02-2917EN 38458 WLP0402 A004R RO4003 23136 PDF

    WLP0402

    Abstract: No abstract text available
    Text: VMMK-3413 25 - 45 GHz Directional Detector in SMT Package Data Sheet Description Features The VMMK-3413 is a small and easy-to-use, broadband, directional detector operating in various frequency bands from 25 to 45 GHz with typical insertion loss of 0.8 dB. It is


    Original     		VMMK-3413 VMMK-3413 AV02-2917EN WLP0402 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62V8200 Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP


    Original     		HY62V8200 256Kx8bit 32pin PDF

    RW RB 20.117

    Abstract: SFERNICE RW K947 RESISTORS JB, HB, KB, LB, MB RB 57 sfernice RWM10X64 230PA7 RP 110 024 RBA-13 SH 250d
    Text: Quick Reference Guide Vishay Sfernice WIREWOUND TECHNOLOGY MOLDED RESISTORS DATA POWER REFERENCES SHEET RATING W Ω 25 °C 1W 0.04 Ω to 2.2 kΩ 2W 0.04 Ω to 4.7 kΩ 2.5 W 0.04 Ω to 13 kΩ NO. MSP 1B 50003 MSP 2B MSP 3B RESISTANCE RANGE TEMPETYPICAL DIMENSIONS


    Original     		RTO20 RTO50 12L/RTE 25L/RTE 55L/RTE 100L/RTE 21-Feb-07 RW RB 20.117 SFERNICE RW K947 RESISTORS JB, HB, KB, LB, MB RB 57 sfernice RWM10X64 230PA7 RP 110 024 RBA-13 SH 250d PDF

    WR284* ISOLATOR

    Abstract: MS3116E-10-6S WR340 flange dimensions
    Text: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS


    Original     		2002/96/EC 2002/96/EC C-39B WR284* ISOLATOR MS3116E-10-6S WR340 flange dimensions PDF

    HY62V8100A

    Abstract: HY62U8100A
    Text: HY62V8100A- I /HY62U8100A-(I) Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8100A-(I)/HY62U8100A-(I) is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. The HY62V8100A-(I) / HY62U8100A-(I) uses high performance CMOS process technology and


    Original     		HY62V8100A- /HY62U8100A- 128Kx8bit HY62U8100A- 32pin 8x20mm/ HY62V8100A HY62U8100A PDF

    HY628100BLLG-55

    Abstract: HY628100B
    Text: HY628100B Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed


    Original     		HY628100B 128Kx8bit 525mil Spe50V -100mA 100mA 32pin HY628100BLLG-55 PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		128KX HY628100A-I 1DD03-11-MAY94 0Q037hD HY628100ALP-I HY628100ALLP-I HY628100ALG-I PDF

    Untitled

    Abstract: No abstract text available
    Text: WJ-RA46/SMRA46 1000 to 4000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 0.8-4.2 GHZ TYP. HIGH GAIN: 25.5 dB (TYP.) HIGH OUTPUT POWER: +19.0 dBm (TYP.) LOW NOISE: 4.5 dB (TYP.) RA46 Outline Drawings


    OCR Scan     		WJ-RA46/SMRA46 018-Q PDF

    20117h

    Abstract: No abstract text available
    Text: HY62U8100B Series 128K X 8bìt CMOS SRAM DESCRIPTION FEATURES The HY62U8100B is a high speed, low pow er and 1M bit CM OS SRAM organized as 131,072 w ords by 8bit. The HY62U8100B uses high performance C M O S process technology and designed for high speed low pow er circuit technology. It is


    OCR Scan     		HY62U8100B HY62U8100B 100ns 20117h PDF

    marking TACS

    Abstract: No abstract text available
    Text: H Y 6 2V 8 20 0B S eries 256K x 8 b it CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is


    OCR Scan     		HY62V8200B 32-STSOPI-8X13 32-TSOPI -8X20 HY62V8200B marking TACS PDF

    Untitled

    Abstract: No abstract text available
    Text: -H Y U N D A I H Y 6281O 0A DESCRIPTION FEATURES The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed fo r high speed


    OCR Scan     		HY628100A HY6281OOA 6281O 128Kx8bit 32pin 8x20mm PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 5 00 MHz Standard Hybrid Amplifier - Parameters 5 5 00 M Hz bandwidth - Q +25 1 Small signal gain 1 °c MHz 15.0 ± 0.5 dB +0.8/-0.4 dB Max Gain flatness 0.6 1.0 dB M ax p-p Reverse isolation 25 25 dB Min Input 1.5:1 1.5:1 Max Output 1.5:1 1.5:1 Max + 12


    OCR Scan     		ybrid200 PDF

    L0042

    Abstract: HY628100ALP
    Text: -HYUNDAI H Y628100A 128K X S e r ie s CMOS SRAM 8 -b it PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		Y628100A HY628100A 55/70/85/100n016 1DD02-11-MAY95 HY628100AP HY628100ALP HY628100ALLP L0042 PDF