Untitled
Abstract: No abstract text available
Text: 2N1052 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)200º V(BR)CBO (V)200 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)200m
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2N1052
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80836
Abstract: MSC80836 msc80
Text: MSC 80836 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC80836 is Designed for Class "C" Amplifier Applications up to 3.5 GHz. PACKAGE STYLE HLP-1 MAXIMUM RATINGS IC 700 mA VCB 45 V PDISS 17 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C θJC 8 C/W
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MSC80836
80836
msc80
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Untitled
Abstract: No abstract text available
Text: MJ11012 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200
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MJ11012
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Untitled
Abstract: No abstract text available
Text: m 2N2894A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2894A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 200 mA lc V 12 V cb P diss 1.2 W @ Tc = 25°C Tj -65 to +200 °C T -65 to +200 °C stg 146 °C/W 0JC CHARACTERISTICS
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2N2894A
2N2894A
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2N929
Abstract: 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72 BFX65
Text: AF transistors Continued Nr. Maximum ratings ^tot at 'amb = + 4 5°c 7C W mA 1.06) 1000 1.06) 1000 1000 1.06) 1.06) 1000 1.06) 1000 1.06) 1000 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 0.15 200 200 0.15 0.15 200 200 0.15 200 0.15 200
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BCW60
BCW61
2N930
2N1711
2N929
2N930
BCX70
BCX71
BCY58
BCY59
BCY72
BFX65
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2N3035
Abstract: No abstract text available
Text: m 2N3035 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. MAXIMUM RATINGS lc 200 mA V cb 50 V P diss 1.0 W @ Tc = 25 °C Tj -65 to + 200 °C T stg -65 to + 200 °C 0JC 175 °C/W CHARACTERISTICS
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2N3035
2N3035
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Untitled
Abstract: No abstract text available
Text: 2N3227 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3227 is Designed for General Purpose Low Current Switching Applications MAXIMUM RATINGS 200 mA lc 20 V ce P diss 1.2 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 145 °C/W 0JC STATIC CHARACTERISTICS
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2N3227
2N3227
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2N2894A
Abstract: C 2OO transistor
Text: 2N2894A SILICON NPN TRANSISTOR DESCRIPTION: The 2N 2894A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO - 52 MAXIMUM RATINGS Ie 200 mA Vc b 12 V Pd is s 1.2 W @ Te ! 25°C Tj -65 to +200 °C Ts t g -65 to +200 °C 146 0C/W
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2N2894A
2N2894A
C 2OO transistor
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2n3033
Abstract: No abstract text available
Text: m 2N3033 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is D esigned fo r A valanche-M ode V ery Fast Switching A pplications. MAXIMUM RATINGS 200 mA lc V 100 V ce P diss 1.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 175 °C /W
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2N3033
2N3033
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D40K2
Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725
Text: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000
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2N7051
T0-92
2N7053
O-226
2N6725
T0-237
D40C7
T0-202
D40K2
D40K2
T0202
2N7051
D40C7
2N7053
D40K4
2N5307
2N5308
2N6725
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TH3L10
Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Text: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500
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2SD1022
2SB1282
O-220
TH3L10
3L10Z*
TK3L10
TH5P4
transistor d 1795
417 TRANSISTOR
zener diode 1283
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Untitled
Abstract: No abstract text available
Text: m 2N3253 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS lc 1.0 A V ce 40 V P diss 5.0 W @ Tc = 25 °C P diss 1.0 W @ T a=25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W
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2N3253
2N3253
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Untitled
Abstract: No abstract text available
Text: m 2N3499 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3499 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 300 mA V ce 100 V P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W
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2N3499
2N3499
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Untitled
Abstract: No abstract text available
Text: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC
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2N3019
2N3019
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Untitled
Abstract: No abstract text available
Text: m 2N2219A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2219A is Designed for General Purpose Switching and Amplifier Applications. MAXIMUM RATINGS lc 800 mA V ce 40 V 3.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 58.3 °C /W
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2N2219A
2N2219A
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Untitled
Abstract: No abstract text available
Text: m 2N5784 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N5784 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS V lc 3.5 A Ib 1.0 A 65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W
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2N5784
2N5784
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Untitled
Abstract: No abstract text available
Text: 2N3501 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3501 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V 150 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC
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2N3501
2N3501
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2n2243 transistor
Abstract: No abstract text available
Text: m 2N2243 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W
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2N2243
2N2243
2n2243 transistor
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Untitled
Abstract: No abstract text available
Text: m 2N2243A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W
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2N2243A
2N2243A
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2N3035
Abstract: TRANSISTOR 2N3035
Text: 2N3035 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS Ie 200 mA Vc b 50 V Pd i s s 1.0 W @ Te $ 25 0C Tj -65 to + 200 °C Ts t g -65 to + 200 0C
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2N3035
TRANSISTOR 2N3035
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Funkamateur
Abstract: SF128 sf126 SSY20 SU161 SF136 SF137 sf359 132 gd 120 sf358
Text: Funkam ateur-Tabeilen Halbleiter-Bauelemente aus der DDR-Produktion 1980 Typ P« mW [W] UcBO V U ceO Ic [ U c e r ] mA V [A] hin Bei UCE und Ic mA V [A] MHz Silizium-NF-Transistoren 200 SC 206 SC 207 200 sc 236 200 sc 237 200 200 sc 238 sc 239 200 Silizium-HF-Transistoren
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il21E
Funkamateur
SF128
sf126
SSY20
SU161
SF136
SF137
sf359
132 gd 120
sf358
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SL307
Abstract: k308 2sc2233 SK305 407D VSL308 2SD2233 2SD870 2SD820
Text: / A3 V ANI OERLIKON/ SEMICOND 3bE D DEblbMö DOOOD2Q 7 « S E L I - S .1 - 0 \ ! v TELEVISION/VIDEO DEVICES SEM ICONDUCTORS c) High voltage/video amplifiers Maximum Ratings TYPE pd pD Vcbo V ceo W W 1.0 10 0.8 V 300 200 350 245 150 0.8 200 V 250 200 300 180
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D000020
S2N3440
riL8N5413
eyiN5416
7SL305
-02SC1875
/2SC2233
O-3/TO-220
2SD820
2SD868
SL307
k308
2sc2233
SK305
407D
VSL308
2SD2233
2SD870
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2N3253
Abstract: No abstract text available
Text: ÀSII 2N3253 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS Ie 1.0 A V ce 40 V Pdiss 5.0 W @ Te = 25 0C Pdiss 1.0 W @ Ta = 25 0C Tj -65 0C to #200 0C T stg -65 0C to #200 0C
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2N3253
2N3253
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2N3033
Abstract: No abstract text available
Text: 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 200 mA < o m Ie 100 V p d is s 1.0 W @ Te = 25 °C Tj -65 0C to '200 0C Ts t g -65 0C to '200 0C
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2N3033
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