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SEMIKRON SKM 200 GAL173D Igbt Module, 1.7Kv, 220A, Semitrans 3; Continuous Collector Current:220A; Collector Emitter Saturation Voltage:3.9V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes \|Semikron SKM 200 GAL173D
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Newark	SKM 200 GAL173D	Bulk			12	1 - 10 - 100 - 1000 - 10000 -	Buy Now
SEMIKRON SKM200GAL173D Electronic Component
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Richardson RFPD	SKM200GAL173D				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

200GAL173D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SKHI 10/12 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& h1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >a H B&* a H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4Be_N I1()-/1+ )4%//)+ ,1(/B') ;)&;)	Original	PDF	HM789 -145B/
circuit diagram for igbt driver Abstract: molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER Text: SKHI 10/12 Absolute Maximum Ratings Symbol Conditions VS Supply voltage primary Input signal voltage HIGH (for 15 V and 5 V input level) Output peak current Output average current (max.) Collector emitter voltage sense Rate of rise and fall of voltage (secondary	Original	PDF	200V-IGBT) circuit diagram for igbt driver molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER
200GAL173D Abstract: No abstract text available Text: SKM 200GB173D . 7 13 8* # Absolute Maximum Ratings Symbol Conditions IGBT Values .: 7 13 8* 9 & /422 .: 7 /32 8* &= . 7 13 8 112 + . 7 <2 8* /32 + 022 + &=71%& ? 12 >9 SEMITRANS 3 Units /2 C . 7 13 8*	Original	PDF	200GB173D 200GB173D1 200GAL173D 200GAR173D 200GAL173D
DIN 17006 Abstract: 123d transistor semikron IGBT SKHI10 semikron SKm 123D DRIVER IGBT SEMIKRON SKPC platine inverter semikron SKHI 22 123D 5v dc smps Text: SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt Visol IO Rgon min Rgoff min Qout/pulse Top Tstg Term Supply voltage primary Inputsignal voltage (HIGH) (for 15 V and 5 V input level) Output peak current Output average current (max.)	Original	PDF
123D TRANSISTOR Abstract: SEMIKRON SKHI 65 TRANSISTOR 123D 2A mosfet igbt driver stage SKHI 65 Pulse Transformer semikron SKHI 22 semikron SKm 123D Intelligent Power Module semikron 500GA123D Text: SKHI 10/12 Absolute Maximum Ratings Symbol Conditions ) ) ' & & I! , # # , # # +/ + B ) # B ) / ' #7 ' # # +#F@/ * # &#	Original	PDF	SKHI10 123D TRANSISTOR SEMIKRON SKHI 65 TRANSISTOR 123D 2A mosfet igbt driver stage SKHI 65 Pulse Transformer semikron SKHI 22 semikron SKm 123D Intelligent Power Module semikron 500GA123D
Untitled Abstract: No abstract text available Text: SKM 200GB173D . 7 13 8* # Absolute Maximum Ratings Symbol Conditions IGBT Values .: 7 13 8* 9 & /422 .: 7 /32 8* &= . 7 13 8 112 + . 7 <2 8* /32 + 022 + &=71%& ? 12 >9 SEMITRANS 3 Units /2 C . 7 13 8*	Original	PDF	200GB173D 200GB173D1 200GAL173D 200GAR173D
AX-52 diode Abstract: No abstract text available Text: SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT ?IX& EI EI[$ ?¥X& M-^9 ,M<+16 ?'<./ M3 V PR ,ZQ6 WI + V N ;< M%TX[JME%7 _ M<+1 IGBT Modules EG EG[$ M3 V PR ,ZQ6 WI +) V N ;< EG&$ +) V NQ ;<b <' Ub M^ V NRQ WI EG EG[$ M3 V PR ,ZQ6 WI +) V N ;<	Original	PDF	200GB173D 200GB173D1 200GAL173D 200GAR173D AX-52 diode
Untitled Abstract: No abstract text available Text: SKHI 10/17 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& i1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >b H B&* b H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4BgaN I1()-/1+ )4%//)+ ,1(/B') ;)&;)	Original	PDF	HM789 -145B/
123d transistor Abstract: semikron SKm 123D 123d transistor 123D DIN 17006 semikron SKHI 123D IGBT, 400A, 1200V(2) MATCHED 3 phase UPS block diagram using IGBT FERRITE TRANSFORMER asymmetrical igbt Text: SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt Visol IO Rgon min Rgoff min Qout/pulse Top Tstg Term Supply voltage primary Inputsignal voltage (HIGH) (for 15 V and 5 V input level) Output peak current Output average current (max.)	Original	PDF
Untitled Abstract: No abstract text available Text: SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT 9 & &< =9 .59<+.& @ . + + 8 A222 Inverse diode SEMITRANSTM 3 IGBT Modules & &(< . 7 13 ;2 8* 7 / &( 7 /2 C 6C .? 7 /32 8* /32 /22 022 + + /A32 + 102 /32 A22 + +	Original	PDF	200GB173D 200GB173D1 200GAL173D 200GAR173D
123D TRANSISTOR Abstract: Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10 Text: SKHI 10/17 R . Absolute Maximum Ratings Symbol Conditions ) ) ) ' & & J! , # # , # # +/ + C ) # C ) / ' #7 ' # # +#HB/ * # &#	Original	PDF	SKHI10 123D TRANSISTOR Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10
Untitled Abstract: No abstract text available Text: SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT 9 & &< =9 .59<+.& @ . + + 8 A222 Inverse diode SEMITRANSTM 3 IGBT Modules & &(< . 7 13 ;2 8* 7 / &( 7 /2 C 6C .? 7 /32 8* /32 /22 022 + + /A32 + 102 /32 A22 + +	Original	PDF	200GB173D 200GB173D1 200GAL173D 200GAR173D
Untitled Abstract: No abstract text available Text: SKM 200GB173D Absolute Maximum Ratings Symbol Conditions IGBT 9 & &< >9 .59<+.& A . + + 8 =222 Inverse diode SEMITRANSTM 3 IGBT Modules & &(< . 7 13 ;2 8* . 7 13 ;2 8* 7 / &( 7 /2 C 6C .@ 7 /32 8* /32 /22 =22 022 + + /=32	Original	PDF	200GB173D 200GB173D 200GB173D1 200GAL173D 200GAR173D
Untitled Abstract: No abstract text available Text: SKM 200GB173D M3 V PR WI9 * /2<< .+824>'<2 < 23'B'25 Absolute Maximum Ratings Symbol Conditions IGBT ?IX& MY V PR WI EI MY V NRQ WI NSQQ ? PPQ J M30<2 V [Q WI NRQ J OQQ J ^ PQ ? NQ b< M30<2 V PR WI NRQ J M30<2 V [Q WI NQQ J OQQ J MY V NRQ WI NcRQ J M30<2 V PR WI	Original	PDF	200GB173D 200GB1+

Untitled Abstract: No abstract text available Text: SKM 200GB173D . 7 13 8* # Absolute Maximum Ratings Symbol Conditions IGBT Values .: 7 13 8* 9 & /422 .: 7 /32 8* &= . 7 13 8 112 + . 7 <2 8* /32 + 022 + &=71%& ? 12 >9 SEMITRANS 3 Units /2 C . 7 13 8*	Original	PDF	200GB173D 200GB173D 200GB173D1 200GAL173D 200GAR173D
123d transistor Abstract: SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron Text: SKHI 10/12 R . Absolute Maximum Ratings Symbol Conditions ) ) ) ' & & I! , # # , # # +/ + B ) # B ) / ' #7 ' # # +#F@/ * # &#	Original	PDF	SKHI10 123d transistor SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron
123d transistor Abstract: mosfet 700V 400A 100Khz transistor 123D 123d H BRIDGE inverters circuit diagram using igbt semikron SKm 123D FERRITE TRANSFORMER 2A mosfet igbt driver stage igbt 400A semikron SKHI 22 Text: 6 0,'5,9(5 $EVROXWH 0D[LPXP 5DWLQJV 7D & 6\PERO 96 9L+ ,RXW3($. ,RXW$9PD[ 9&( GYGW 9LVRO ,2 5JRQ PLQ 5JRII PLQ 4RXWSXOVH 7RS 7VWJ 7HUP 6XSSO\ YROWDJH SULPDU\ ,QSXWVLJQDO YROWDJH +,*+ IRU 9 DQG 9 LQSXW OHYHO 2XWSXW SHDN FXUUHQW 2XWSXW DYHUDJH FXUUHQW PD[	Original	PDF
Semikron SKM 173D Abstract: SK 200 GAR 125 SKM200GB173 B679 Text: s e m ik r o n Absolute Maximum Ratings S ym bol VcES VcGR lc ICM V a lu e s C o nd itions 1 U nits 1700 1700 2 2 0 /1 5 0 440 / 300 ±20 1250 - 4 0 . . .+150 125 4000 Class F 55/150/56 Rqe = 20 k ii Tease = 25/80 °C Tease ~ 25/80 °C; tp = 1 ms Vges Ptoi	OCR Scan	PDF