CA324
Abstract: HA-4741 HA5232 HA5232IJ HA5232IP HA5234 LT1013 LT1014 OP200 OP400
Text: U J HA5232, HA5234 H a r r is " S E M I C O N D U C T O R a PRELIMINARY Precision Dual and Quad Operational Amplifiers March 1993 Description Features • Low Offset Voltage. .200iiV Max • Low Offset D rift. 2jiV/°C • Low Supply Current.
|
OCR Scan
|
PDF
|
HA5232,
HA5234
200nV
HA5232
HA5234
100pF,
HA5232
CA324
HA-4741
HA5232IJ
HA5232IP
LT1013
LT1014
OP200
OP400
|
relay 5v 30a
Abstract: F D203 L5A relay ID202 ID300 ID301
Text: ID200-ID203 ID300-ID301 SCRs 1.6 Amp, Planar FEATURES • Voltage Rating: to 200V • Max. Gate Trigger Current: 200iiA • Hermetically Sealed Metal Can • Planar Passivated Construction DESCRIPTION This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs
|
OCR Scan
|
PDF
|
ID200-ID203
ID300-ID301
relay 5v 30a
F D203
L5A relay
ID202
ID300
ID301
|
Untitled
Abstract: No abstract text available
Text: HA5232 HA5234 HARRIS a S E M I C O N D U C T O R PRELIMINARY Precision Dual and Quad Operational Amplifiers October 1992 Description Features • .200iiV Max Low Offset V oltage. • Low Offset D r if t . 2(iV/°C • Low Supply C urren t.
|
OCR Scan
|
PDF
|
HA5232
HA5234
200iiV
HA5232
HA5234
HA-4741
CA324.
OP20herwise
1-800-4-HARRIS
|
NZ70
Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Text: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by
|
OCR Scan
|
PDF
|
TC511001AP/AJ/AZ-70,
TG511001
AP/AJ/flZ-80
TC511001AP/AJ/AZ-10
TC511001AP/AJ/AZ
TG511001AP/AJ/AZ-80
TCS11001AP/AJ/AZ-10
NZ70
TC511001
TC511001AZ
adata a55 diagram
4ao5
|
LM373
Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica tions and consumer-oriented circuits to precision instrumentation and computer designs.
|
OCR Scan
|
PDF
|
92260-Fontenay-Aux-Roses
25956F
HX3866
LM373
MC1303L
LM566 "direct replacement"
transistor BD 540 LYS
MFC6030
LM566 equivalent
LM3039
SN72558P
LM370
SN72741P
|
Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES 10-Bit Monolithic D/A Converter AD DAC100 FEATURES Complete Current Output Converter High Stability Buried Zener Reference Single Chip Monolithic Construction Wide Supply Range ±6 V to ± 18V Trimmed Output Application Resistors Fast Settling - 225ns 8 Bits , 375ns (10 Bits)
|
OCR Scan
|
PDF
|
10-Bit
DAC100
225ns
375ns
16-Pin
DAC100
|
Untitled
Abstract: No abstract text available
Text: 1,048,576 W O R D X 4 BIT D YN A M IC RAM * This is advanced information and specifica tions are subject to change without notice. DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
|
OCR Scan
|
PDF
|
TC514410AP/AJ/ASJ/AZ
350mil)
TC51441OAP/AJ/ASJ/AZ-60
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits
|
OCR Scan
|
PDF
|
TC528128AP
ORDSx88ITS
TC528128AP/
072-words
256-words
TC528128AP/AJ
TC528128AP
DIP40
TC523123A?
|
Untitled
Abstract: No abstract text available
Text: r r u n m m TECH N O LO G Y C o n s t a n t - C u r r e n t/ V o lt a g e H ig h E ffic ie n c y B a tte ry C h a r g e r FCRTURCS D C S C R IP T IO n • Simple Charging of Li-Ion, NiMH and NiCd Batteries ■ Very High Efficiency: Up to 97% ■ Precision 0.5% Charging Voltage Accuracy
|
OCR Scan
|
PDF
|
280kHz
28-Lead
LT1512
LT1513
LTC1759
LT1505
LT1769
1505T
|
VCC-950
Abstract: No abstract text available
Text: GENNUM GENU NX “I I G X 95 33 Serial Digital 8x9 Crosspoint D A T A SHEET FEATURES DEVICE DESCRIPTION • operation beyond 622 Mb/s The GX9533 is a high speed 8x9 serial digital crosspoint. An expansion input port eases the design of larger switching matrices by reducing PCB layers and eliminating the need
|
OCR Scan
|
PDF
|
GX9533
matrice32-2814
VCC-950
|
DG508 connection diagram
Abstract: HI508 DG508 IH5108 IH5108CJE IH5108CPE IH5108MJE G00U s2801
Text: IH 5 1 0 8 8 -Channel Fault Protected CMOS Analog M ultiplexer IM R D IL FEATURES GENERAL DESCRIPTION • • • • • • • The IH51CI8 is a diiilectrically isolated CMOS m onolithic analog multiplexer, designed as a plug-in replacement forthe DG508 and sim ilar devices, but adding fault protection to the
|
OCR Scan
|
PDF
|
IH5108
100pA
DG508,
HI508
AD7508
100nA)
IH51CI8
DG508
4IH5108S
DG508 connection diagram
IH5108
IH5108CJE
IH5108CPE
IH5108MJE
G00U
s2801
|
Untitled
Abstract: No abstract text available
Text: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability
|
OCR Scan
|
PDF
|
MCTV75P60E1,
MCTA75P60E1
O-247
000A/|
O-093AA
O-218)
|
Untitled
Abstract: No abstract text available
Text: Int0 rfi Qt ÌOfi QI provisional Data Sheet No. PD-9.338D I R Rectifier JANTX2N6766 HEXFET POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC.IRF250] N-CHANNEL 200 Volt, 0.085Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.The effi
|
OCR Scan
|
PDF
|
JANTX2N6766
JANTXV2N6766
MIL-PRF-19500/543]
IRF250]
D025132
|
Untitled
Abstract: No abstract text available
Text: SEMIKRDN V rsM V rrm V drm V -dt ÌJcr Ithms (maximum values for continuous operation 3000 A I 5000 A Itav (sin. 180; T case — . . . ; D SC) 1500 A (55 °C) 2450 A (55 °C) V V 2300 2200 1000 2700 2600 1000 SKT 1400/26 E SKT 2000/26 E 2900 2800 1000 SKT 1400/28 E
|
OCR Scan
|
PDF
|
fll3bb71
B3-59
fll3bb71
|
|
|
cascode miller capacitance
Abstract: ka band transistor
Text: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX Excellent Current Gain Match.0.5% TYP Tight VBE Match VQS . 200^V MAX
|
OCR Scan
|
PDF
|
100Hz,
200MHz
LM394BN/CN
SSM-2210
SSM-2210
cascode miller capacitance
ka band transistor
|
SiS 486 schematic
Abstract: No abstract text available
Text: Accelerator Series FPGAs - ACT 3 Family Features • Replaces up to twenty 32 macro-cell CPLDs • Up to 10,000 Gate Array Equivalent Gates up to 25,000 equivalent P L IJ Gates • Replaces up to one hundred 20-pin PAL Packages • Highly Predictable Performance with 100% Automatic
|
OCR Scan
|
PDF
|
20-Pin
A14100
SiS 486 schematic
|
LV 20-P
Abstract: 78L05
Text: amp* 2840 20 Bits at 100 m Sec 2841 20 Bits at 500 mSec 2842 20 Bits at 1 Sec 20 BIT A /D CONVERTER SERIES ! I y Features 20 Bit Integrating A /D Programmable Conversion Time Continuous sampling <10nV Sensitivity D escription M odels 2840,2841 & 2842 are complete, integrating
|
OCR Scan
|
PDF
|
120db)
50MHz
10MHz
200MSec
LV 20-P
78L05
|
Untitled
Abstract: No abstract text available
Text: european space agency agence spatiale européenne Pages 1 to 66 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 512x9 BIT FIRST IN, FIRST OUT MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M67201FV ESA/SCC Detail Specification No. 9301/041
|
OCR Scan
|
PDF
|
512x9
M67201FV
CKBD-000
|
LA5525
Abstract: SANYO sep flsri 1417A
Text: # IS ].« = a - * Nû*5H17 t í < * '* .» . g • > *?• / - t * w i i » L A 5 5 2 5 - / j D c = e - 9 'A m m m w U J* « it • s o f f i l a oc f •e/i De ít* - í . t k *>*> v * p a i m v b r i / =1^ 1 c í | i ? coü s ftiffii¡c # - « s - c * % .
|
OCR Scan
|
PDF
|
f50mA
Vcc200mA
5227JN
6l66/8183Y0
LA5525
50-l50mA
200mA
20-50raA
I70-200raA
l00mAiTa
LA5525
SANYO sep
flsri
1417A
|
TRANSISTOR R2002
Abstract: Zener 2458 Battery charger 48 volt 593D LT1510 LT1511 LT1769 LT1769CGN LT1769IGN MBRS130LT3
Text: uTECHNOLOGY im LT1769 Constant-Current/ Constant-Voltage 2ABattery Charger with Input Current Limiting K fìT U R C S D C S C R IP TIO n • Simple Solution to Charge NiCd, NiMH and Lithium Rechargeable Batteries—Charging Current Programmed by Resistors or DAC
|
OCR Scan
|
PDF
|
LT1511
LT1512/LT1513
LTC1729
LTC1759
TRANSISTOR R2002
Zener 2458
Battery charger 48 volt
593D
LT1510
LT1769
LT1769CGN
LT1769IGN
MBRS130LT3
|
MB85260
Abstract: No abstract text available
Text: FUJITSU IM X MB85260-10 8 DRAM MODULE MB85260-12 TS033-A882 Feb. 1988 1,048,576 X 8 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85260 is a fully decoded, dynamic CMOS random access memory module with eight MB81C1000, in 26-pin SOJ packages, and eight .22yiF decoupling capa
|
OCR Scan
|
PDF
|
MB85260-10
MB85260-12
TS033-A882
MB85260
MB81C1000,
26-pin
22yiF
30-pin
|
DIP44-pin
Abstract: ha1681
Text: HA16816NT/MP SLIC IC for Key Telephone Applications Features • Basic Functions: Internal battery feed control B , loop super vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor • Ring trip detection
|
OCR Scan
|
PDF
|
HA16816NT/MP
DIP44-pin
ha1681
|
Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTC144TE / DTC144TUA / DTC144TKA DTC144TSA •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit 1 6 ±0.2 DTC144TE 1.0 ± 0.1 1
|
OCR Scan
|
PDF
|
DTC144TE
DTC144TUA
DTC144TKA
DTC144TSA
DTC144TE
DTC144TE/DTC144TU
|
replacement for 2n2905
Abstract: EL2004 EL2005 EL2005CG EL2005G MIL-I-45208A
Text: EL2005/EL2005C élantec HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS F e a tu r e s • Low inpu t current— 50 pA • Low offset and drift— 2 m V /25 jaV/°C • H igh slew rate— 1500 V/|US • F ast rise and fall tim e— 2.5 ns • H igh in p u t resistance— 1000 G il
|
OCR Scan
|
PDF
|
EL2005/EL2005C
ELH0033
MIL-STD-883
EL2005CG
MDP0002
EL2005G
EL2005G/883B
100mA
replacement for 2n2905
EL2004
EL2005
MIL-I-45208A
|
