Untitled
Abstract: No abstract text available
Text: 19-1255; Rev 0; 8/97 Low-Power, Dual, 13-Bit Voltage-Output DACs w ith Serial Interface F e a tu re s ♦ 13-Bit Dual DAC with Internal Gain of +2 T h e 3 - w ir e s e r ia l in t e r f a c e is S P I /Q S P I™ a n d M ic ro w ire ™ c o m p a tib le . E a c h D A C h a s a d o u b le buffere d in p u t org a n ize d as an in p u t re g iste r follow ed
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13-Bit
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QFP64-P-1414
Abstract: No abstract text available
Text: O K I Semiconductor MSM65352/65352B nX 65K CMOS 8-Bit Microcontroller GENERAL DESCRIPTION The MSM65352 is a high performance 8-bit microcontroller that employs OKI original CPU core, the nX-8/50. The MSM65352 includes 8K-byte program memory, 256-byte data memory, LCD
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MSM65352/65352B
MSM65352
nX-8/50.
256-byte
10MHz
768kHz
10MHz,
O-2-100
QFP64-P-1414
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY - April 1996 Edition 2.2 FUJITSU PRODUCT PROFILE SHEET M B 8 1 4405C-60/-70 CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode D y na m ic RAM The Fujitsu M B814405C is a fully decoded CM OS Dynamic RAM DRAM that contains 4,194,304
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4405C-60/-70
B814405C
DS05-10189-1E
S-20095-5/96
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Untitled
Abstract: No abstract text available
Text: 19-4778; Rev Oa; 8/98 1 . 8 V to 2 8 V I nput , P W M S t e p - U p Co n t r o l l e r s in ¡j M A X The MAX668/MAX669 constant-frequency, pulse-widthmodulating PWM , current-mode DC-DC controllers are designed for a wide range of DC-DC conversion applica
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MAX668/MAX669
220pA)
100kHz
500kHz)
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transistor f131
Abstract: L4970 I10H
Text: /= T * 7 / S G S -T H O M S O N H d g M K i 5 L4970A 10A SW ITCHING REGULATOR 10A OUTPUT CURRENT 5.1 V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA TION INTERNAL CURRENT LIMITING PRECISE 5.1 V ± 2% ON CHIP REFERENCE
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L4970A
500KHz
ver970A
i-35U
L4970A/77A/75A
L4974A/72A
H91L4970-45
transistor f131
L4970
I10H
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Untitled
Abstract: No abstract text available
Text: OPA336 OPA2336 OPA4336 B U R R -B R O W N 0 [ ] SINGLE-SUPPLY, McroPOWER CMOS OPERATIONAL AMPLIFIERS MieroA mpHfier* Series FEATURES DESCRIPTION • SINGLE SUPPLY OPERATION OPA336 series micropower CMOS operational ampli fiers are designed for battery powered applications.
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OPA336
OPA2336
OPA4336
OPA336
17313b5
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY - October 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET M B 8 1 4 4 5 D - 6 0 / 7 0 / 6 0 L / 7 0 L CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page M ode Dynamic RAM The Fujitsu M B814405D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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B814405D
MB814405D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY - - May 1996 Edition 1.2 FUJITSU PRODUCT PROFILE SHEET M B 8 1 1 8 1 60A-60/-70 CMOS 1M X 16BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 16BIT Fast Page Mode D y na m ic RAM T h e F u jitsu M B 8 1 1 8 1 6 0 A is a fu lly d e c o d e d C M O S D y n a m ic R A M D R A M th a t co n ta in s
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0A-60/-70
16BIT
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2N1595
Abstract: 2N1595A 2N2324 2n1596 CS18D 2N1596A 2N1597 2N2322 2N2323 2N2325
Text: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-39 TO-18 CASE VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 C S18B C S18BZ 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D
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2N2322
2N1595
2N1595A
2N2323
2N1596
2N1596A
2N2324
2N2325
CS18B
CS18BZ
2N2324
CS18D
2N1597
2N2322
2N2323
2N2325
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Untitled
Abstract: No abstract text available
Text: IN T E G R A T E D C IR C U IT S Preliminary specification 1995 Feb 29 IC20 Data Handbook Philips Semiconductors PHILIPS PHILIPS P hilips S e m ic o n d u c to rs P re lim i n a r y s p e c i f i c a t i o n CMOS s in g l e - c h i p 8-b it m i c r o c o n t r o l l e r
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OCR Scan
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83C504/87C504
83C504
87C504
8XC504)
80C51
8XC504
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PDF
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2F27
Abstract: intel MCS-51 INSTRUCTION SET marking hm2 United Technologies Microelectronics UTM RESISTOR 214
Text: Military Standard Products UT69RH051 Radiation-Hardened Microcontroller Preliminary Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER June 1996 FEATURES □ Flexible clock operation - 1Hz to 20MHz with external clock - 2MHz to 20MHz using internal oscillator with external
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UT69RH051
16-bit
MCS-51
20MHz
UT69RH051-2-6-96
2F27
intel MCS-51 INSTRUCTION SET
marking hm2
United Technologies Microelectronics
UTM RESISTOR 214
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PDF
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Untitled
Abstract: No abstract text available
Text: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-18 CASE TO-39 VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 CS18B CS18B Z 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D
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2N2322
2N1595
2N1595A
2N2323
2N1596
2N1596A
2N2324
2N2325
CS18B
CS18B
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PDF
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81c1000
Abstract: No abstract text available
Text: June 1991 Edition 3.0 FUJITSU DATA SHEET M B 8 1 C W O O A -70U -80U -10L CMOS 1 Mx 1 BIT FAST PAGE MODE LOW POWER DRAM CMOS 1,048,576 X 1 Bit Fast Page Mode Low Power DRAM T he Fujitsu M B 8 1 C 1 0 0 0 A is a C M O S , fu lly d e c o d e d dyn a m ic R A M organized as 1,048,576 w o rds
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24-LEAD
FPT-24P-M05)
81c1000
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TFK U 111 B
Abstract: Z2400 rp 111 MB8116400 ZIP-24P-M03 8116400 fptn marking c5a 8 pins
Text: fjUN 1 Í WÄ April 1992 Edition 2.0A DATA SHEET MB 8 1 1 6 4 0 _ : FUJITSU Û-6 0 /- 7 0 / - 8 0 CMOS 4M x 4 Bits Fast Page Mode Dynamic RAM The Fujitsu MB8116400 is a fully decoded C MOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells accessible in 4-bit increments. The MB8116400
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OCR Scan
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MB8116400-60/-70/-80
MB8116400
TFK U 111 B
Z2400
rp 111
ZIP-24P-M03
8116400
fptn
marking c5a 8 pins
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8117805a
Abstract: 8117805 4059N 16A4s
Text: PRELIMINARY - - FUJITSU October 1995 Edition 2.1 PRODUCT PROFILE SHEET M B 8 1 1 7 8 0 5 A -60/-70 CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM C M O S 2, 09 7, 152x 8BI T H yper Page M o d e D y n a m i c RAM The Fujitsu MB8117805A is a fully decoded CM OS Dynamic RAM DRAM that contains
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MB8117805A
MB8117805ADRAM
8117805a
8117805
4059N
16A4s
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MB81141622
Abstract: B81141622-015 MB8114
Text: FUJITSU S E MI CONDUCT OR DATA S H E E T D S 0 5 - 11011 -1 E MEMORY CMOS 2 X128K X 16 SYNCHRONOUS DRAM MB81141622-012/-015 C M O S 2 BANKS OF 1 3 1 ,072 -WOR DS x 16-BIT S Y N C H R O N O U S DYNA MIC RA ND OM A C C E S S ME M OR Y •DESCRI PTI ON The Fujitsu M B81141 622 is a CM OS Synch ron ou s Dynamic Random Access Memory SDRAM ^&bntain in g 4,1 94,304 m em ory
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X128K
MB81141622-012/-015
16-BIT
B81141
B81141622
MB81141622
B81141622-015
MB8114
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-1381; R ev 0 ; 7/98 e v a l u a t io n s > E .VWLABLf k l > J X I > l / l 1- Cel l to 2- Cel l , L o w - N o i s e , Hi g h- Ef f i c i e n c y , S t e p - U p DC- D C C o n v e r t e r Features The M AX1678 is a h ig h -e fficie n cy, low -voltage, synchronous-rectified, step-up DC-DC converter intended
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AX1678
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ML 709c
Abstract: ml2035 CIRCUIT
Text: Aprii 1997 % M i c r o Linear ML2035 Serial Input Programmable Sine Wave Generator GENERAL DESCRIPTION FEATURES The M L2035 is a m onolithic sinew ave generator whose output is programmable from D C to 2 5 k H z. No external com ponents are required. The frequency of the sinew ave
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ML2035
L2031
L2032
L2035
ML 709c
ml2035 CIRCUIT
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PDF
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evic vt 60w
Abstract: LM1040 Transistor Shortform Datasheet & Cross References TRANSISTOR C 6090 EQUIVALENT 6 pin TRANSISTOR SMD CODE CAA Fairchild Databook LMF120 lm331 equivalent LM1819 Harris Semiconductor LF124
Text: A Corporate Dedication to Quality and Reliability National Sem iconductor is an industry leader in the manufacture of high quality, high reliability integrated circuits. We have been the leading proponent of driv ing down 1C defects and extending product lifetim es.
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PDF
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 7 “7 £ S G S -T H O M S O N T S 3V902 3V INPUT/OUTPUT RAIL TO RAIL DUAL CMOS OPERATIONAL AMPLIFIER WITH STANDBY POSITION DEDICATED TO 3.3V OR BATTERY SUPPLY (specified at 3V and 5V) RAIL TO RAIL INPUT AND OUTPUT VOLTAGE RANGES STANDBY POSITION : REDUCED CO N
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3V902
600ft
100ft
200nA/Ampli
DIP14
TS3V902I/AI
TS3V902
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PDF
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