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Untitled Abstract: No abstract text available Text: bb53T31 0013551 7 • E5E I> N AMER P H I L I P S / D I S C R E T E BUT22B BUT22C _ :_ _ J v _ T - 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended fo r use	OCR Scan	bb53T31 BUT22B BUT22C O-220 T-33-13	PDF
SGSD00036 Abstract: SGSD00037 SGSD00038 SGSD00039 SGSD00040 SGSD00041 Lb 598 d transistor* SGSD00038 Text: S G S-THOHSON G7E D I 7121237 GGlflTMB 1 73C 18771 D Z ? - t * SGSD00036/38 SGSD00037/39 SGSD00040/41 MULTIEPITAXIAL MESA HOLLOW EMITTER NPN A D V A N C E D AT A H IGH V O LT A G E FAST SW ITCHING POWER T R A N SIST O R S The SGSD00036 and SGSD00038, the SGSD00037 and SGSD00039, the SGSD00040 and	OCR Scan	7121S37 SGSD00036/38 SGSD00037/39 SGSD00040/41, SGSD00036 SGSD00038, SGSD00037 SGSD00039, SGSD00040 SGSD00041, SGSD00038 SGSD00039 SGSD00041 Lb 598 d transistor* SGSD00038	PDF
250V 10A TF 240 Abstract: 100-C Text: Series PTC10000, PTC 10001 NPN Silicon Power Darlington Transistors 20 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts Sustaining • Glass Passivated Die to Provide Excellent High Temperature Stability APPLICATIONS • • • • SPECIFICATIONS	OCR Scan	20/ts 200juH 250V 10A TF 240 100-C	PDF
D773 Abstract: b 58115 T73C SGSD00042 sgsp472 CECLA npn 1000V 100a SGSD00044 npn transistors 700V 1A Text: S G S-THOMSON D7E D \| 7cI2i:i237 QD1Ô74T 1 \| 73C VÎK S G S d K ì r i 1 8 7 78 D MULTIEPITAXIAL MESA HOLLOW EMITTER NPN „ 1 ADVANCE DATA HIGH V O L T A G E F A S T SW ITCHING POW ER T R A N S I S T O R S The S G SD 0 00 4 2 and S G SD 0 0 04 4 are m ultiepjtaxial mesa h ollow em itter N PN transistors	OCR Scan	SGSD00Q44 SGSD00042 SQSD00044 O-220 SGSD00044 90Wtimes 001fl75M 73Cjj733 SGSD00042 D773 b 58115 T73C sgsp472 CECLA npn 1000V 100a SGSD00044 npn transistors 700V 1A	PDF
MJH16010A Abstract: MJ16010A AMs03 p6302 TIS100 MJ1601 T1N2 100CC AN952 baker Text: MOTOROL A SC 1EE 0 I b3b725M □OäSEll 5 \| XSTRS/R F 7-33-lS MOTOROLA SEM ICO N DUCTOR TECHNICAL DATA Designer's Data Sheet POWER TRANSISTORS 15 AM PERES 500 VOLTS 125 and 175 WATTS NPN Silicon Power Transistors 1 kV Switchmode III Series These transistors are designed for high-voltage, high-speed, power switching in	OCR Scan	b3b725Â 7-33-/S O-204AA MJ16010A 1X126 O-218AC MJH16010A MJH16010A MJ16010A AMs03 p6302 TIS100 MJ1601 T1N2 100CC AN952 baker	PDF
SGSD00032 Abstract: npn 1000V 100a SGSD00033 SGSD00034 SGSD00035 Text: S G S-THOMSON 07E 1 \| TTETEB? 0010735 1 \| 73C 18764 D 7^"' 3 2 - ^ f i f , , , SGSD00032 3 M I gÌ •: - doooÌ ! m m m S M U L T IE P IT A X IA L M E S A 1 H O LLO W E M IT T E R SMPIM A D V A N C E DATA HIGH V O LT A G E FA ST SW ITCHIN G PO W ER T R A N SIST O R S	OCR Scan	SGSD00032 SGSD00033 SGSD00034 SGSD00035 SGSD00034, SGSD00035, OT-93 npn 1000V 100a SGSD00035	PDF
philips 22c Abstract: BUT22B BUT22C IEC134 BUT22 Text: ESE D N AMER PH ILI P S / D I S CR E T E • bb53T31 QQlññ51 7 ■ BUT22B BUT22C T - 3 3 - I S SILICON DIFFUSED POW ER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T0-220 envelope intended for use in converters, inverters, switching regulators, motor controHystems, etc.	OCR Scan	BUT22B BUT22C T-33-13 T0-220 O-220AB. bbSn31 7Z81Q16 philips 22c BUT22C IEC134 BUT22	PDF