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    200P03LS Search Results

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    200P03LS Price and Stock

    Rochester Electronics LLC BSC200P03LSG

    P-CHANNEL POWER MOSFET
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    DigiKey BSC200P03LSG Bulk 693
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    • 1000 $0.43
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    Infineon Technologies AG BSC200P03LSGAUMA1

    MOSFET P-CH 30V 9.9/12.5A 8TDSON
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    DigiKey BSC200P03LSGAUMA1 Reel
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    Infineon Technologies AG BSC200P03LSG

    BSC200P03 - Power Field-Effect Transistor, 9.9A, 30V, 0.02ohm, P-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics BSC200P03LSG 13,641 1
    • 1 $0.4167
    • 10 $0.4167
    • 100 $0.3917
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    200P03LS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSC200P03LS G

    Abstract: No abstract text available
    Text: 200P03LS G OptiMOS -P Power-Transistor TM Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		PDF BSC200P03LS 200P03LS BSC200P03LS G

    Untitled

    Abstract: No abstract text available
    Text: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		PDF BSC200P03LS IEC61249-2-21 200P03LS

    Untitled

    Abstract: No abstract text available
    Text: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 20 mW -12.5 ID A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		PDF BSC200P03LS IEC61249-2-21 200P03LS JESD22-A114-HBM 00V-1kV)

    D125 tf

    Abstract: BSC200P03LS G
    Text: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		PDF BSC200P03LS IEC-61249-2-21 200P03LS 25gerous D125 tf BSC200P03LS G

    Untitled

    Abstract: No abstract text available
    Text: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		PDF BSC200P03LS 200P03LS

    D125 tf

    Abstract: 200P03LS
    Text: 200P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 20 mΩ ID -12.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications


    Original     		PDF BSC200P03LS 200P03LS D125 tf 200P03LS