AVALANCHE TRANSISTOR
Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Text: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRF250
O-204AE
TB334
TA09295.
AVALANCHE TRANSISTOR
transistor irf250
5 pin relay 12v 30a
IRF250
irf250 dc motor
MOSFET IRF250
irf250 datasheet
TB334
160V 30A TRANSISTOR
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PDF
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IRF250
Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International
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90338E
IRF250
JANTX2N6766
JANTXV2N6766
O-204AA/AE)
MIL-PRF-19500/543]
an52-7105
IRF250
irf250 datasheet
IRF 543 MOSFET
JANTX2N6766
JANTXV2N6766
avalanche diode 30A
IRF250 TO-247
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International
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Original
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90338E
IRF250
JANTX2N6766
JANTXV2N6766
O-204AA/AE)
MIL-PRF-19500/543]
p252-7105
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PDF
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Mosfet
Abstract: SSPL2090
Text: SSPL2090 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 80mΩ(typ.) ID 30A TO-220 Schematic Diagram Marking and Pin Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSPL2090
O-220
Mosfet
SSPL2090
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PDF
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RURG3020
Abstract: TA09645
Text: RURG3020 Data Sheet January 2002 30A, 200V Ultrafast Diode Features The RURG3020 is an ultrafast diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3020
RURG3020
175oC
TA09645
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PDF
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RURG3020CC
Abstract: RURG3020C TA09645
Text: RURG3020CC Data Sheet January 2002 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3020CC
RURG3020CC
175oC
RURG3020C
TA09645
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PDF
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DSA0039858
Abstract: BAZ-3882-NCAZ RURH3020CC TA09645
Text: RURH3020CC Data Sheet January 2000 File Number 2773.4 30A, 200V Ultrafast Dual Diode Features The RURH3020CC is an ultrafast dual diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated,
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RURH3020CC
RURH3020CC
DSA0039858
BAZ-3882-NCAZ
TA09645
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PDF
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RURP3020
Abstract: TA09645
Text: RURP3020 Data Sheet January 2000 File Number 2777.5 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,
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RURP3020
RURP3020
TA09645
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PDF
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Untitled
Abstract: No abstract text available
Text: RURG3020CC Data Sheet January 2002 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3020CC
RURG3020CC
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PDF
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TA09645
Abstract: RURG3020
Text: RURG3020 Data Sheet January 2000 File Number 3277.3 30A, 200V Ultrafast Diode Features The RURG3020 is an ultrafast diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURG3020
RURG3020
TA09645
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PDF
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RURP3020
Abstract: TA09645
Text: RURP3020 Data Sheet January 2000 File Number 2777.5 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,
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RURP3020
RURP3020
TA09645
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PDF
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RURP3020
Abstract: TA09645
Text: RURP3020 Data Sheet January 2002 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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RURP3020
RURP3020
TA09645
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PDF
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RURH3020CC
Abstract: TA09645
Text: RURH3020CC Data Sheet January 2002 30A, 200V Ultrafast Dual Diode Features The RURH3020CC is an ultrafast dual diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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RURH3020CC
RURH3020CC
175oC
TA09645
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PDF
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RURG3020C
Abstract: RURG3010CC RURG3020CC RURG3015C RURG3015CC TA9645
Text: RURG3010CC, RURG3015CC, RURG3020CC S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <45ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RURG3010CC,
RURG3015CC,
RURG3020CC
O-247
RURG3015CC
TA9645)
RURG3020C
RURG3010CC
RURG3020CC
RURG3015C
RURG3015CC
TA9645
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PDF
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transistor A2
Abstract: tb 120 RURH3010CC RURH3015CC RURH3020CC
Text: RURH3010CC, RURH3015CC, RURH3020CC S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175oC Rated Junction Temperature
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RURH3010CC,
RURH3015CC,
RURH3020CC
O-218AC
175oC
RURH3020CC
transistor A2
tb 120
RURH3010CC
RURH3015CC
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PDF
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rurg3020c
Abstract: ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES RURG3020CC TA09645
Text: RURG3020CC Data Sheet January 2000 File Number 3552.3 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURG3020CC
RURG3020CC
rurg3020c
ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES
TA09645
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PDF
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Untitled
Abstract: No abstract text available
Text: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF250,
IRF251,
IRF252,
IRF253
RF251,
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PDF
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Untitled
Abstract: No abstract text available
Text: ASSESS? RURG3010CC, RURG3015CC, RURG3020CC Aprii 1995 30A, 100V - 200V Ultrafast Dual Diodes Features Package • Ultrafast with Soft Recovery . <45ns • Operating Temperature. . . . +175°C • Reverse Voltage Up to . . ,200V JEDEC STYLE TO-247 ANODE 1
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OCR Scan
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RURG3010CC,
RURG3015CC,
RURG3020CC
O-247
URG3015CC
TA9645)
VFTR9645
1RTR9645
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PDF
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Untitled
Abstract: No abstract text available
Text: RURP3010, RURP3015, RURP3020 ¡11995 30A, 100V - 200V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated
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OCR Scan
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RURP3010,
RURP3015,
RURP3020
TQ-220AC
RURP3020
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PDF
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Untitled
Abstract: No abstract text available
Text: ASSESS? RURH3010CC, RURH3015CC, RURH3020CC 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V
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OCR Scan
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RURH3010CC,
RURH3015CC,
RURH3020CC
O-218AC
RURH3020CC
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PDF
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Untitled
Abstract: No abstract text available
Text: RURG3010, RURG3015, RURG3020 H A R R IS X Semiconductor 30A, 100V - 200V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery. <45ns JEDEC STYLE 2 LEAD TO-247 • Operating
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OCR Scan
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RURG3010,
RURG3015,
RURG3020
O-247
RURG3015
RURG3020
20kHz)
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PDF
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IRFP250R
Abstract: irfp 250r IRFP251R p250a IRFP252R IRFP253R IRFP25
Text: Rugged Power MOSFETs_ IRFP250R, IRFP251R, IRFP252R, IRFP253R File Num ber 2016 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■
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OCR Scan
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IRFP250R,
IRFP251R,
IRFP252R,
IRFP253R
50V-200V
IRFP252R
IRFP253R
IRFP25
IRFP250R
irfp 250r
IRFP251R
p250a
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PDF
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fls2
Abstract: PPR1356 PPR1357 PPR1358 PPR1359
Text: OD II I High Efficiency, 30A Center-Tap Diodes PPR1356 PPR1357 PPR1358 PPR1359 FEATURES ABSOLUTE MAXIMUM RATINGS • Very Low Forward Voltage Peak Inverse Voltage, PPR1356 200V • Very Fast S w itching Speed Peak Inverse Voltage, PPR1357 300V • Convenient Package
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OCR Scan
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PPR1356
PPR1357
PPR1358
PPR1359
PPR1359
fls2
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PDF
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RURG3015
Abstract: No abstract text available
Text: Œ HARRIS S E M I C O N D U C T O R RURG3010, RURG3015 RURG3020 January1994 30A, 100V - 200V Ultrafast Diodes Package Features JEDEC STYLE 2 LEAD TO-247 TOP VIEW • Ultrafast with Soft • Operating
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OCR Scan
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RURG3010,
RURG3015
RURG3020
O-247
ry1994
RURG3020
10OA/jw
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PDF
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