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    200V 3A Search Results

    200V 3A Result Highlights (5)

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    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL73024SEHX/SAMPLE Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors, PFL, / Visit Renesas Electronics Corporation
    ISL70024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
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    200V 3A Price and Stock

    Panasonic Electronic Components ERA-3AHD200V

    Thin Film Resistors - SMD 0603 20ohms 50ppm 0.5% AEC-Q200
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    Mouser Electronics ERA-3AHD200V 26,854
    • 1 $0.12
    • 10 $0.088
    • 100 $0.061
    • 1000 $0.038
    • 10000 $0.027
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    OMRON Corporation A4E-B200VA

    Basic / Snap Action Switches Enabling Switch
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    Mouser Electronics A4E-B200VA 4
    • 1 $76.79
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    OMRON Corporation A4E-B200VS

    Basic / Snap Action Switches 3 POS SAFETY SWITCH 2CO,v/mount,w/seal
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    Mouser Electronics A4E-B200VS
    • 1 $64.3
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    • 100 $49.86
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    Trumeter Technologies TR3-U3A-0200V1QOC-F03

    Encoders 12" POLY 200 PPR 5-28VDC 36" CABLE
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    Mouser Electronics TR3-U3A-0200V1QOC-F03
    • 1 $1273.05
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    KEMET Corporation PEH200VO433AMU2

    Aluminum Electrolytic Capacitors - Screw Terminal 3300uF 400VDC 20% 65 X 105mm
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    Mouser Electronics PEH200VO433AMU2
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    200V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460


    Original     		PDF JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR

    IRF620 application

    Abstract: IRF620
    Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark


    Original     		PDF IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620FP IRF620 application

    IRF620 application

    Abstract: IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics
    Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark


    Original     		PDF IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620 application IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics

    Untitled

    Abstract: No abstract text available
    Text: S320 3A, 200V, Surface Mount Package Schottky Rectifier Features • • • • • Low Profile, Mini SurfaceMount Package: SMB / DO-214AA High Reverse Voltage: VRRM = 200V Low Power Loss, High Efficiency = 80A High Surge Current: FSM I RoHS 2002/95/EC Compliant


    Original     		PDF DO-214AA 2002/95/EC

    340B

    Abstract: 320B 330B 350B SM320B 3150b SM3200B sm340b 150V-200V SM 110 CJ
    Text: SM320B thru SM3200B Schottky Barrier Rectifiers PRIMARY CHARACTERISTICS 0.086 2.20 0.077 (1.95) IF 3A VRRM 20~200V IFSM 80A 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) VF 0.50V, 0.70V, 0.85V, 0.87V, 0.90V TJ max 20V-100V: 125°C, 150V-200V: 150°C


    Original     		PDF SM320B SM3200B 0V-100V: 50V-200V: DO-214AA SM340B SM350B SM360B SM380B 340B 320B 330B 350B 3150b SM3200B sm340b 150V-200V SM 110 CJ

    S3203A

    Abstract: S320
    Text: S320 3A, 200V, Surface Mount Package Schottky Rectifier Features • • • • • Low Profile, Mini Surface Mount Package: SMB / DO-214AA High Reverse Voltage: VRRM = 200V Low Power Loss, High Efficiency High Surge Current: IFSM = 80A RoHS 2002/95/EC Compliant


    Original     		PDF DO-214AA 2002/95/EC DO-214AA S3203A S320

    Untitled

    Abstract: No abstract text available
    Text: CHIP RESISTOR Chip Resistors Selection Guide • General Purpose Chip Resistor SERIES MA 0402 KO 0402 1.00*0.50 1/16W 50V 1/10W 0805 2.00*1.25 1210 3.10*2.50 1812/2010 2010 5.00*2.50 2512 2512 6.25*3.10 1/4W 200V 1/2W 200V 3/4W 200V TO 1210 150V UC ND CO 1206


    Original     		PDF 1/16W 350oC 0402x2/4P2R0402 0402x4/8P4R0402 1002/10K 0603x4/8P4R0603

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    1E14

    Abstract: 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL9230D FRL9230H FRL9230R

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF


    Original     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRL9230D FRL9230H FRL9230R

    2SC6011A

    Abstract: 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS


    Original     		PDF 2SC6011/A -2SC6011 -2SC6011A 2SA2151/A 2SC6011 2SC6011A Pow011 2SC6011A 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7396 FSL230R4

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL230D, FSL230R Rad Hard in Fairchild for MOSFET

    2N6798

    Abstract: TB334
    Text: 2N6798 Data Sheet December 2001 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V The 2N6798 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching


    Original     		PDF 2N6798 2N6798 TB334 O-205AF TB334

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS9230D, FSS9230R -200V, Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report

    FDP2670

    Abstract: FDB2670
    Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and


    Original     		PDF FDP2670/FDB2670 FDP2670 FDB2670

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1

    integrated circuits equivalents list

    Abstract: Rad Hard in Fairchild for MOSFET
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, integrated circuits equivalents list Rad Hard in Fairchild for MOSFET

    55A200V

    Abstract: IRFF230 TB334
    Text: IRFF230 Data Sheet January 2002 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF230 TA17412. 55A200V IRFF230 TB334

    IRF9622

    Abstract: IRF9620 IRF9623 IRF9621 TB334
    Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V IRF9622 IRF9620 IRF9623 IRF9621 TB334

    Untitled

    Abstract: No abstract text available
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm)

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    data sw 3205

    Abstract: No abstract text available
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, ros ON = 1 -60ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS9230D, FSS9230R -200V, -257AA MIL-S-19500 data sw 3205

    40842

    Abstract: No abstract text available
    Text: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9230D, -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms; 40842