resistor 2200 ohm
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM
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600-65E11
20110119a
resistor 2200 ohm
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Untitled
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A = 6500 V VCES VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' t 1 Features Conditions VCES VGE = 0 V Maximum Ratings 6500 V ± 20 V 600 A 1200 A 10 µs
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600-65E11
20110119a
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Untitled
Abstract: No abstract text available
Text: FID 60-06D IC25 = 65 A VCES = 600 V VCE sat typ. = 1.6 V IGBT Boost Chopper in ISOPLUS i4-PAC 3 4 1 E72873 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
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60-06D
E72873
42T60
75-06P1
20110119a
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1800 IXYS
Abstract: No abstract text available
Text: MIO 1200-33E10 IC80 = 1200 A = 3300 V VCES VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200
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1200-33E10
20110119a
1800 IXYS
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3006d
Abstract: H bridge 300v 30a
Text: FII 30-06D IGBT phaseleg IC25 = 30 A VCES = 600 V VCE sat typ. = 1.9 V in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
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30-06D
E72873
5-06A
20110119a
3006d
H bridge 300v 30a
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jc 817
Abstract: 2000Vcc
Text: MIO 2400-17E10 IC80 = 2400 A = 1700 V VCES VCE sat typ. = 2.3 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 1700 V ± 20 V IC80 TC = 80°C 2400
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2400-17E10
20110119a
jc 817
2000Vcc
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Untitled
Abstract: No abstract text available
Text: FII 30-06D IC25 = 30 A VCES = 600 V VCE sat typ. = 1.9 V IGBT phaseleg in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
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30-06D
E72873
5-06A
20110119a
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Untitled
Abstract: No abstract text available
Text: MIO 1200-25E10 IC80 = 1200 A VCES = 2500 V VCE sat typ. = 2.5 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 2500 V ± 20 V IC80 TC = 80°C 1200
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1200-25E10
20110119a
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Untitled
Abstract: No abstract text available
Text: MIO 1800-17E10 IC80 = 1800 A = 1700 V VCES VCE sat typ. = 2.3 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' t G E' Features Conditions VCES V VGE = 0 V Maximum Ratings 1700 -o Symbol u IGBT ± 20 VGES V TC = 80°C ICM
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1800-17E10
20110119a
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40-06D
Abstract: isoplus ixys mounting
Text: FII 40-06D IGBT phaseleg IC25 = 40 A VCES = 600 V VCE sat typ. = 1.8 V in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
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40-06D
E72873
25T60
50-06P1
20110119a
40-06D
isoplus ixys mounting
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E9010
Abstract: No abstract text available
Text: VWI 20-06P1 IC25 = 19 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack in ECO-PAC 2 S9 K 12 N9 X 18 L9 NTC J 13 N5 R5 W 14 C1 A1 A5 D5 H5 K 10 Pin arangement see outlines F3 G1 Features t IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C
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20-06P1
20110119a
E9010
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Untitled
Abstract: No abstract text available
Text: MIO 1200-33E10 IC80 = 1200 A VCES = 3300 V VCE sat typ. = 3.1 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 3300 V ± 20 V IC80 TC = 80°C 1200
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1200-33E10
20110119a
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Untitled
Abstract: No abstract text available
Text: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A VCES = 600 V VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 14 T6 T2 D2 D6 11 T 3 12
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MWI5006A7
20110119a
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Untitled
Abstract: No abstract text available
Text: MIO 1800-17E10 IC80 = 1800 A VCES = 1700 V VCE sat typ. = 2.3 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES V VGE = 0 V Maximum Ratings 1700 ± 20 VGES V IC80 A TC = 80°C 1800
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1800-17E10
20110119a
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Untitled
Abstract: No abstract text available
Text: MIO 1200-25E10 IC80 = 1200 A = 2500 V VCES VCE sat typ. = 2.5 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' t G E' Features Conditions VCES VGE = 0 V Maximum Ratings 2500 V ± 20 V 1200 A 2400 A 10 µs -o Symbol u IGBT
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1200-25E10
20110119a
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1800-17E10
Abstract: resistor 670 ohm
Text: MIO 1800-17E10 IC80 = 1800 A = 1700 V VCES VCE sat typ. = 2.3 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES V VGE = 0 V Maximum Ratings 1700 ± 20 VGES V IC80 A TC = 80°C 1800
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1800-17E10
20110119a
1800-17E10
resistor 670 ohm
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ups D6-11
Abstract: MKI 50-06 A7 A7t diode 20 mki 5
Text: MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A = 600 V VCES VCE sat typ. = 1.9 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type 13 NTC - Option MKI 50-06 A7 MKI 50-06 A7T T1 T5 D1 D5 9 1 without NTC with NTC T 10 2 16 T2 14 T6 D2 D6 11 T 3 12
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MWI5006A7
20110119a
ups D6-11
MKI 50-06 A7
A7t diode
20 mki 5
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ns 1000 n
Abstract: No abstract text available
Text: MIO 1200-25E10 IC80 = 1200 A = 2500 V VCES VCE sat typ. = 2.5 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 2500 V ± 20 V IC80 TC = 80°C 1200
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1200-25E10
20110119a
ns 1000 n
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Untitled
Abstract: No abstract text available
Text: MIO 600-65E11 IC80 = 600 A VCES = 6500 V VCE sat typ = 4.2 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C' C C C 5 7 9 E E E 4 6 8 3 G 2 E' 1 Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES IC85 TC = 85°C ICM
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600-65E11
20110119a
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Untitled
Abstract: No abstract text available
Text: MIO 2400-17E10 IC80 = 2400 A VCES = 1700 V VCE sat typ. = 2.3 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' G E' Features IGBT Symbol Conditions VCES VGE = 0 V Maximum Ratings VGES 1700 V ± 20 V IC80 TC = 80°C 2400
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2400-17E10
20110119a
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Untitled
Abstract: No abstract text available
Text: FII 40-06D IC25 = 40 A VCES = 600 V VCE sat typ. = 1.8 V IGBT phaseleg in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
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40-06D
E72873
25T60
50-06P1
20110119a
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Untitled
Abstract: No abstract text available
Text: MIO 2400-17E10 IC80 = 2400 A = 1700 V VCES VCE sat typ. = 2.3 V IGBT Module Single switch Short Circuit SOA Capability Square RBSOA C C C E E E C' t G E' Features IGBT VCES VGE = 0 V Maximum Ratings u Conditions 1700 V ± 20 V 2400 A 4800 A 10 µs -o Symbol
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2400-17E10
20110119a
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60-06D
Abstract: No abstract text available
Text: FID 60-06D IGBT Boost Chopper IC25 = 65 A VCES = 600 V VCE sat typ. = 1.6 V in ISOPLUS i4-PAC 3 4 1 E72873 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
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60-06D
E72873
42T60
75-06P1
20110119a
60-06D
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