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    2012051 Search Results

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    2012051 Price and Stock

    Molex 0022012051

    CONN RCPT HSG 5POS 2.54MM
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    DigiKey 0022012051 Bag 21,555 1
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    Component Electronics, Inc 0022012051 82,279
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    Bourns Inc CVH201205-1R0M

    FIXED IND 1UH 800MA 237.5MOHM SM
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    DigiKey CVH201205-1R0M Digi-Reel 6,780 1
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    CVH201205-1R0M Cut Tape 6,780 1
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    CVH201205-1R0M Reel 4,000 4,000
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    Newark CVH201205-1R0M Cut Tape 2,448 10
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    RS CVH201205-1R0M Bulk 20 Weeks 4,000
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    TE Connectivity T4132012051-000

    CONN RCPT MALE 5P GOLD SLDR CUP
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    DigiKey T4132012051-000 Bulk 883 1
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    TE Connectivity T4112012051-000

    CONN PLUG FMALE 5POS GOLD SCREW
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    DigiKey T4112012051-000 Bulk 80 1
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    Avnet Americas T4112012051-000 Bulk 17 Weeks, 2 Days 1
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    T4112012051-000 Bag 100
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    TE Connectivity T4142012051-000

    CONN RCPT MALE 5POS GOLD SOLDER
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    DigiKey T4142012051-000 Bulk 68 1
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    TTI T4142012051-000 Each 200
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    2012051 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)


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    TPH8R80ANH PDF

    TPN30008NH

    Abstract: No abstract text available
    Text: TPN30008NH MOSFETs Silicon N-channel MOS U-MOS-H TPN30008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.1 nC (typ.)


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    TPN30008NH TPN30008NH PDF

    mlz2012

    Abstract: MLZ2012N100LT MLZ2012N MLZ2012M MLZ1608N100LT MLZ2012N4R7 MLZ1608A mlz1608m220 MLZ2012M150W MLZ1005M1R0W
    Text: Inductors for Decoupling Circuits Multilayer/STD • magnetic shielded MLZ series Type: MLZ1005W MLZ1608 MLZ2012 1005[0402 inch]* 1608[0603 inch] 2012[0805 inch] * Dimensions Code JIS[EIA] Issue date: May 2012 • All specifications are subject to change without notice.


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    MLZ1005W MLZ1608 MLZ2012 2002/95/EC, MLZ1005W 300min. 160min. 200min. 60min. MLZ2012N100LT MLZ2012N MLZ2012M MLZ1608N100LT MLZ2012N4R7 MLZ1608A mlz1608m220 MLZ2012M150W MLZ1005M1R0W PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


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    PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND PDF

    Untitled

    Abstract: No abstract text available
    Text: TPH8R008NH MOSFET シリコンNチャネルMOS形 U-MOS-H TPH8R008NH 1. 用途 • DC-DCコンバータ用 • スイッチングレギュレータ用 • モータドライブ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。


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    TPH8R008NH PDF

    Untitled

    Abstract: No abstract text available
    Text: TPH12008NH MOSFET シリコンNチャネルMOS形 U-MOS-H TPH12008NH 1. 用途 • DC-DCコンバータ用 • スイッチングレギュレータ用 • モータドライブ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。


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    TPH12008NH PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 1000 µH ±10% Rated Current ∆T = 40 K IR 0.23 A max. Saturation Current |ΔL/L| < 10% Isat 0.25 A typ. DC Resistance RDC


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    2012-ury PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 4700 µH ±10% Rated Current ∆T = 40 K IR 0.11 A max. Saturation Current |ΔL/L| < 10% Isat 0.14 A typ. DC Resistance RDC


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    2012-05-1n PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended hole pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 2200 µH ±10% Rated current ∆T = 40 K IR 0.16 A max. Saturation current |ΔL/L| < 10% 0.18 A typ. DC Resistance


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 3300 µH ±10% Rated Current ∆T = 40 K IR 0.13 A max. Saturation Current |ΔL/L| < 10% Isat 0.15 A typ. DC Resistance RDC


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    2012-ury PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 8200 µH ±10% Rated Current ∆T = 40 K IR 0.05 A max. Saturation Current |ΔL/L| < 10% Isat 0.05 A typ. DC Resistance RDC


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    2012-05-1n PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Hole Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 5600 µH ±10% Rated Current ∆T = 40 K IR 0.10 A max. Saturation Current |ΔL/L| < 10% Isat 0.07 A typ. DC Resistance RDC


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    2012-ury PDF

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended hole pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 4700 µH ±10% Rated current ∆T = 40 K IR 0.11 A max. Saturation current |ΔL/L| < 10% 0.14 A typ. DC Resistance


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    PDF

    840S

    Abstract: No abstract text available
    Text: Ordering number : ENA2063 CMOS IC LC72725KMA RDS RBDS Demodulation IC Overview The LC72725KMA is IC that implement the signal processing required by the European Broadcasting Union RDS (Radio Data System) standard and by the US NRSC (National Radio System Committee) RBDS (Radio Broadcast Data


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    ENA2063 LC72725KMA LC72725KMA 57kHz 100ms) A2063-9/9 840S PDF

    Untitled

    Abstract: No abstract text available
    Text: Visible Red Emitter Product No: M TE7 0 0 0 N2 -R Peak Emission Wavelength: 700nm The MTE7000N2-R is a red, 5mm water clear emitter designed for applications requiring lat top, high power output and high reliability in a wide angle package. F EATU RES AP P L IC ATIO N S


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    700nm MTE7000N2-R PDF

    Untitled

    Abstract: No abstract text available
    Text: 122 series features • PCB Mounting Ø 3mm LED • Material conforms to UL94 V-O flammability ratings • Colour diffused lens, white diffused for bi-colour options • Reverse polarity options available • Custom built multi-colour permutations available


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 151 series features • PCB Mounting Ø 5mm LED • Material conforms to UL94 V-O flammability ratings • Independent addressability enhances drive circuit options for tri-colour status indication • Reverse polarity options available • Customised lead lengths available


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Inductors for Power Circuits Wound/STD • magnetic shielded CLF-D series Type: CLF7045-D 6.9x7.2 mm Issue date: May 2012 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific


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    CLF7045-D 2002/95/EC, CLF7045T-471M-D 100kHz PDF

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    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Recommended hole pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 kHz/ 5 mA L 68 µH ±10% Rated current ∆T = 40 K IR 1.5 A max. Saturation current |ΔL/L| < 10% 1.0 A typ. DC Resistance


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared Emitter Product No: M TE8800N1 Peak Emission Wavelength: 880nm The MTE8800N1 consists of a 880nm high output infrared die in a water-clear 5mm plastic molded package. Custom package solutions and sorting are available. FEATURES APPLICATIONS > High Output Power


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    TE8800N1 880nm MTE8800N1 880nm Volt-956-2980 MTE8800N1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Visible Red Emitter Product No: M T E 1077N1-R Peak Emission Wavelength: 770nm The MTE1077N1-R is a red T 1 3/4, 5mm water clear emitter designed for applications requiring high power output and high reliability in a narrow angle package. FEATURES APPLICATIONS


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    1077N1-R 770nm MTE1077N1-R E1077N1-R PDF

    Untitled

    Abstract: No abstract text available
    Text: High Power Infrared Emitter Product No: MTE8 7 6 0 C Peak Emission Wavelength: 870nm The MTE8760C consists of a 870nm high output infrared die in a water-clear 3mm plastic molded package. Custom package solutions and sorting are available. F EATU RES AP P L IC ATIO N S


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    870nm MTE8760C 870nm PDF

    Untitled

    Abstract: No abstract text available
    Text: Visible Red Emitter Product No: M TE5 0 6 6 CJ -UR Peak Emission Wavelength: 660nm The MTE5066CJ-UR is a red T 1, 3mm water clear emitter designed for applications requiring high power output and high reliability in a narrow angle package. It can be custom sorted for speciic power output ranges.


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    660nm MTE5066CJ-UR PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP1280AGN3 2A SINK/SOURCE BUS TERMINATION REGULATOR FEATURES DESCRIPTIOON Ideal for DDR-I, DDR-II and DDR-III VTT Applications The AP1280AGN3 is a simple, cost-effective and high-speed linear regulator designed to generate


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    AP1280AGN3 AP1280AGN3 PDF