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    2020 MOSFET Search Results

    2020 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2020 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ovc Bluetooth

    Abstract: marking po3 mosfet UHC124 hcfs mosfet 434h mosfet Transdimension 400H AT43312A 800-FFFH 95000
    Text: UHC124 USB Host Controller Data Sheet TransDimension Inc. 2 Venture Irvine, CA 92618 www.transdimension.com Phone: 949 727-2020 Fax: (949) 727-3232 [email protected] [email protected] TransDimension Document Number: MU1002 Rev. 1.05, February, 2002


    Original     		PDF UHC124 MU1002 ovc Bluetooth marking po3 mosfet hcfs mosfet 434h mosfet Transdimension 400H AT43312A 800-FFFH 95000

    SLUP230

    Abstract: DESIGN RULE CHECK PCB AN-2020 JESD51-1 double sided pcb, thermal via ca jt JESD51-11
    Text: National Semiconductor Application Note 2020 Marc Davis-Marsh April 15, 2010 Introduction can then be used to analyze the design in more detail. The listed reference material is home to additional data and many useful thermal calculators, covering material that is beyond


    Original     		PDF AN-2020 SLUP230 DESIGN RULE CHECK PCB AN-2020 JESD51-1 double sided pcb, thermal via ca jt JESD51-11

    SLUP230

    Abstract: JESD51-1
    Text: National Semiconductor Application Note 2020 Marc Davis-Marsh June 14, 2010 Introduction can then be used to analyze the design in more detail. The listed reference material is home to additional data and many useful thermal calculators, covering material that is beyond


    Original     		PDF AN-2020 SLUP230 JESD51-1

    600B

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S18100N MRF6S18100NBR1 MRF6S18100NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 199mployees, MRF6S18100NR1 600B A113 A114 A115 AN1955 C101 JESD22 MRF6S18100N MRF6S18100NBR1

    ATC100B0R5BT500XT

    Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100NR1 ATC100B0R5BT500XT MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 A113 A114 A115 AN1955

    T491C105K0

    Abstract: mcr63v470m8x11 MRF6S19120H
    Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 T491C105K0 mcr63v470m8x11

    MRF6S19120H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19120HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 --63ubsidiaries, MRF6S18100NR1

    MRF6S19120H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 MRF6S19120HR3 MRF6S19120HSR3 Designed for N - CDMA base station applications with frequencies from 1930


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 MRF6S19120H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 0, 12/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100N

    T491X106K035AT

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19120HR3 MRF6S19120HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 T491X106K035AT A114 A115 AN1955 C101 JESD22 MRF6S19120HSR3 Nippon capacitors Nippon chemi

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT

    MRF8P20100HR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3

    NIPPON CAPACITORS

    Abstract: MRF6S19140HR3 GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF
    Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF 88onductor MRF6S19140HR3 MRF6S19140HSR3 NIPPON CAPACITORS GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19120N MRF7S19120NR1 T491D106K035AT
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MRF7S19120N MRF7S19120NR1 A113 A114 A115 AN1955 C101 JESD22 MRF7S19120N MRF7S19120NR1 T491D106K035AT

    J1112

    Abstract: transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 1, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF7S19120N MRF7S19120NR1 J1112 transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1

    AN1955

    Abstract: j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA atc600f1r1at250xt tdk 2025 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to


    Original     		PDF MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 AN1955 j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA atc600f1r1at250xt tdk 2025 A114 A115

    murata process

    Abstract: CRCW12061001FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 3, 3/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF7S19120N MRF7S19120NR1 MRF7S19120N murata process CRCW12061001FKEA

    AN1955

    Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to


    Original     		PDF MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 AN1955 MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA

    0119A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3 MRF6S19200HR3 0119A

    V10513

    Abstract: 250GX-0300-55-22 AN1955 C1825C103J1GAC JESD22-A113 JESD22-A114 MRF7S19120N MRF7S19120NR1 T491D106K035AT
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF7S19120N MRF7S19120NR1 84fficers, V10513 250GX-0300-55-22 AN1955 C1825C103J1GAC JESD22-A113 JESD22-A114 MRF7S19120N MRF7S19120NR1 T491D106K035AT

    IRFB22

    Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
    Text: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRF820R, IRF821R, IRF822R, IRF823R 50V-500V IRF822FI IIRF823R sF822R, IRFB22 IRF820R IRF821R IRF822R IRF823R thermal impedance GI 312 diode