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    2029 TRANSISTORS Search Results

    2029 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2029 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX14983EETJ

    Abstract: No abstract text available
    Text: MAX14983E RELIABILITY REPORT FOR MAX14983EETJ+ PLASTIC ENCAPSULATED DEVICES September 16, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.


    Original     		PDF MAX14983E MAX14983EETJ+ /-2500V JESD22A114. /-100mA JESD78. MAX14983EETJ

    CDCLVC1104

    Abstract: No abstract text available
    Text: User's Guide SCAU041 – April 2010 Low-Additive, Phase-Noise LVCMOS Clock Buffer Evaluation Board The CDCLVC1104 is a high-performance, low-additive phase noise LVCMOS clock buffer. It has one LVCMOS input and four LVCMOS outputs. It also has an enable pin.


    Original     		PDF SCAU041 CDCLVC1104 CDCLVC1104. CDCLVC1104EVM.

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SCAU045 – September 2010 Low Additive Jitter, Twelve LVDS Outputs Clock Buffer Evaluation Board This user's guide describes how to use the CDCLVD1212/CDCLVD2106 evaluation module EVM and provides users with guidelines to build their own systems. The EVM schematics and bill of materials are


    Original     		PDF SCAU045 CDCLVD1212/CDCLVD2106 CDCLVD1212/ CDCLVD2106

    MC57XXPSIA

    Abstract: CAP SMD0805
    Text: User's Guide SLOU303 – November 2010 TAS5717/19 10W/15W Digital Audio Power Amplifier with Integrated Capacitor-Free HP Amplifier This manual describes the operation of the TAS5717/19EVM to evaluate the performance of the TAS5717/19 integrated digital audio power amplifiers. These EVMs will be collectively referred to as the


    Original     		PDF SLOU303 TAS5717/19 0W/15W TAS5717/19EVM TAS5717/19EVM MC57XXPSIA CAP SMD0805

    CDCLVD1204

    Abstract: No abstract text available
    Text: User's Guide SCAU043 – June 2010 Low-Additive Jitter, Four LVDS Outputs Clock Buffer Evaluation Board This user's guide describes how to use the CDCLVD1204/CDCLVD2102 evaluation module EVM and provides users with guidelines to build their own systems. The EVM schematics and bill of materials are


    Original     		PDF SCAU043 CDCLVD1204/CDCLVD2102 CDCLVD1204/ CDCLVD1204

    material declaration semiconductor package

    Abstract: asbestos safety material declaration vishay 89901 DO-219AB 58018
    Text: Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


    Original     		PDF LLP-75 06-May-04 material declaration semiconductor package asbestos safety material declaration vishay 89901 DO-219AB 58018

    40039

    Abstract: SOD-523 DO-219AB Germanium DO-35 DIODE 89901 cd 4553 material declaration vishay asbestos DO-219AB germanium diode SOD323
    Text: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


    Original     		PDF LLP-75 06-May-04 40039 SOD-523 DO-219AB Germanium DO-35 DIODE 89901 cd 4553 material declaration vishay asbestos DO-219AB germanium diode SOD323

    OMRON PRO01 programming console

    Abstract: No abstract text available
    Text: Cat. No. W345-E1-11 SYSMAC CS/CJ Series CS1W-AD/DA CS1W-MAD CJ1W-AD/DA CJ1W-MAD Analog I/O Units OPERATION MANUAL SYSMAC CS/CJ Series CS1W-AD041-V1/AD081-V1/AD161 CS1W-DA041/DA08V/DA08C CS1W-MAD44 CJ1W-AD041-V1/AD081-V1/AD042 CJ1W-DA021/DA041/DA08V/DA08C/DA042V


    Original     		PDF W345-E1-11 CS1W-AD041-V1/AD081-V1/AD161 CS1W-DA041/DA08V/DA08C CS1W-MAD44 CJ1W-AD041-V1/AD081-V1/AD042 CJ1W-DA021/DA041/DA08V/DA08C/DA042V CJ1W-MAD42 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: OMRON PRO01 programming console

    material declaration vishay

    Abstract: asbestos safety TbA 8220 m CAS No. 28064-14-4 DO-214 diode 84084 material declaration semiconductor package sot-363 Package material 28064-14-4 40039
    Text: VISHAY Vishay Semiconductors The Constituents of Semiconductor Components Responsible electronic component and equipment manufacturers are already preparing for the time when the lifespan of their products comes to an end by scrutinizing the materials incorporated and their


    Original     		PDF LLP-75 29-Apr-04 material declaration vishay asbestos safety TbA 8220 m CAS No. 28064-14-4 DO-214 diode 84084 material declaration semiconductor package sot-363 Package material 28064-14-4 40039

    MAX4220

    Abstract: 2022 8pin MAX4212 MAX4213 MAX4216 MAX4218 2031* maxim Video Op Amps 300MHz transistor 2028 Maxim RS Integrated Products 2012
    Text: 19-1178; Rev 2; 8/01 L MANUA ION KIT T A U L EVA BLE AVAILA Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable Features ♦ High Speed: 300MHz -3dB Bandwidth MAX4212/MAX4213 200MHz -3dB Bandwidth (MAX4216/MAX4218/MAX4220) 50MHz 0.1dB Gain Flatness


    Original     		PDF 300MHz, 300MHz MAX4212/MAX4213) 200MHz MAX4216/MAX4218/MAX4220) 50MHz -78dBc -75dB 100mA MAX4220 2022 8pin MAX4212 MAX4213 MAX4216 MAX4218 2031* maxim Video Op Amps 300MHz transistor 2028 Maxim RS Integrated Products 2012

    Untitled

    Abstract: No abstract text available
    Text: 19-1178; Rev 3; 10/03 L MANUA ION KIT T A U L EVA BLE AVAILA Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable Features ♦ High Speed: 300MHz -3dB Bandwidth MAX4212/MAX4213 200MHz -3dB Bandwidth (MAX4216/MAX4218/MAX4220) 50MHz 0.1dB Gain Flatness


    Original     		PDF 300MHz, 300MHz MAX4212/MAX4213) 200MHz MAX4216/MAX4218/MAX4220) 50MHz -78dBc -75dB 100mA

    MAX4212

    Abstract: MAX4213 MAX4216 MAX4218 MAX4220 MAX4213EUA Maxim RS Integrated Products 2012
    Text: 19-1178; Rev 3; 10/03 L MANUA ION KIT T A U L EVA BLE AVAILA Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable Features ♦ High Speed: 300MHz -3dB Bandwidth MAX4212/MAX4213 200MHz -3dB Bandwidth (MAX4216/MAX4218/MAX4220) 50MHz 0.1dB Gain Flatness


    Original     		PDF 300MHz, 300MHz MAX4212/MAX4213) 200MHz MAX4216/MAX4218/MAX4220) 50MHz -78dBc -75dB 100mA MAX4212 MAX4213 MAX4216 MAX4218 MAX4220 MAX4213EUA Maxim RS Integrated Products 2012

    max4216

    Abstract: MAX4212 MAX4213 MAX4218 MAX4220 2022 8pin
    Text: 19-1178; Rev 1; 6/98 L MANUA ION KIT HEET T A U L EVA TA S WS DA FOLLO Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable The MAX4212/MAX4213 single, MAX4216 dual, MAX4218 triple, and MAX4220 quad op amps are unity-gain-stable devices that combine high-speed performance with rail-to-rail outputs. The MAX4213/


    Original     		PDF 300MHz, MAX4212/MAX4213 MAX4216 MAX4218 MAX4220 MAX4213/ MAX4212/MAX4213 MAX4216 MAX4218 MAX4212 MAX4213 2022 8pin

    PHILIPS SENSOR 2032

    Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
    Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V


    Original     		PDF 1616H 101CCD WAG-05 PHILIPS SENSOR 2032 .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer

    2029 mosfet

    Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R
    Text: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF330R, IRFF331R, IRFF332R, IRFF333R 50V-400V 2CS-4265S IRFF332R IRFF333R 2029 mosfet ic l00a IRFF330R IRFF331R

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2029 2SD2029 Silicon Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complem entary Pair with 2 S B 1 3 4 7 U nit I mm 5.3max. 20.5max. 3.0- • Features 1 4 • V ery g o o d lin earity of DC c u r re n t gain hre


    OCR Scan     		PDF 2SD2029

    st C212 diode

    Abstract: C2099 SEF323 SEF321
    Text: S G S-THOMSON 0 7 E D g 7^2^537 O Q l ? ^ 73C 1 7 4 8 6 D T - 3 9-f/ ë \\ LA f-X\ p . N-CHANNELPOWER MOSTRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.


    OCR Scan     		PDF SEF323i 00V/350V 00V/350V 300ns, SGSP564 C-211 SEF32Q SEF322 SEF323 E--09 st C212 diode C2099 SEF323 SEF321

    sj 2038

    Abstract: sj 2025 ic sj 2038 SJ 2036 ic tea 2025 TRANSISTOR FS 2025 sj 2028 tea 2037 2SC2021 TEA 2029 A
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 27MHz, 770MHz, 50MHz, sj 2038 sj 2025 ic sj 2038 SJ 2036 ic tea 2025 TRANSISTOR FS 2025 sj 2028 tea 2037 2SC2021 TEA 2029 A

    500 DKZ

    Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
    Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt


    OCR Scan     		PDF 150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    AM2001

    Abstract: AM223 full adder circuit using nor gates AM2005 AX202 AM2031 AM319 abx2002 full adder circuit using xor and nand gates ax253
    Text: Am 3500 Mask-Programmable ECL G ate Array PRELIM IN ARY > 3 DISTINCTIVE CHARACTERISTICS • • Up to 4988 equivalent gates - 576 internal cells - Up to 134 l/O s H igh-perform ance, low -pow er ECL gates - W orst case Tpcj = 0.6 ns Hi-Speed = 0.7 ns (Medium)


    OCR Scan     		PDF Am3500 Am3500 TC002800 WF010980 7321A 7322A AM2001 AM223 full adder circuit using nor gates AM2005 AX202 AM2031 AM319 abx2002 full adder circuit using xor and nand gates ax253

    am 332

    Abstract: AM2001 Ax292
    Text: Am3500 Mask-Programmable ECL G ate Array PR ELIM IN ARY > 3 u en DISTINCTIVE CHARACTERISTICS U nlim ited use o f high-pow er m acros Large m acrocell library containing o v e r 200 functions - Supported o n m ajor CAE w orkstations - S uperset o f MCA-2 Advanced oxide isolated bipolar LSI process technology


    OCR Scan     		PDF Am3500 TC002800 WF010980 7322A am 332 AM2001 Ax292

    af201

    Abstract: AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211
    Text: y i Am3550 MixeqT ECL/TTL I/O Mask-Programmable Gate Array • — PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed


    OCR Scan     		PDF Am3550 Am3550 wf010980 wfr02682 7321A 07322a af201 AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211

    af201

    Abstract: F2018 AM211 am 332 F2017 SEM 2005 16 PINS inverter
    Text: Am3550 Mixeçt ÉCL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed = 0.7 ns (Medium)


    OCR Scan     		PDF Am3550 7321A 7322A af201 F2018 AM211 am 332 F2017 SEM 2005 16 PINS inverter