T 9722
Abstract: Diode T 9722 EDI8G322048C
Text: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package
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EDI8G322048C
2048Kx32
01581USA
EDI8G322048C
T 9722
Diode T 9722
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32-PIN
Abstract: DS1249W DS1249W-100 DS1249W-150
Text: DS1249W 3.3V 2048kb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation
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DS1249W
2048kb
100ns
32-pin
DS1249W
150ns
32-PIN,
DS1249W-100
DS1249W-150
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Untitled
Abstract: No abstract text available
Text: LY62L204916A 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.2 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8
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LY62L204916A
2048K
8mmx10mm.
SRA-55SLT
LY62L204916AGL-70SLT
LY62L204916AGL-70SLI
LY62L204916AGL-55SL
LY62L204916AGL-70SLIT
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Untitled
Abstract: No abstract text available
Text: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns
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EN29LV160C
2048K
1024K
16-bit)
16-Kbyte,
32-Kbyte,
64-Kbyte
16-Kword
32-Kword
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32-PIN
Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns
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DS1249Y/AB
2048k
DS1249Y)
DS1249AB)
32-pin
32-pin,
600-mil
DS1249Y/AB
740-MIL
DS1249AB
DS1249AB-100
DS1249AB-70
DS1249Y
DS1249Y-100
DS1249Y-70
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EN39SL160
Abstract: cFeon EN cFeon serial Flash chip 07c0
Text: EN39SL160H/L EN39SL160H/L 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only FEATURES • - • Single power supply operation - Full voltage range:1.65-1.95 volt for read and write operations. - Ideal for battery-powered applications.
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EN39SL160H/L
2048K
1024K
16-bit)
400ms
EN39SL160
cFeon EN
cFeon serial Flash chip
07c0
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E99151
Abstract: DS1249W DS1249W-100 DS1249W-100IND MDT32
Text: 19-5633; Rev 11/10 DS1249W 3.3V 2048kb Nonvolatile SRAM www.maxim-ic.com FEATURES • • PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles
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DS1249W
2048kb
100ns
32-pin
MDT32
E99151
DS1249W
DS1249W-100
DS1249W-100IND
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EN29LV160CT
Abstract: EN29LV160CB en29lv160c
Text: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns
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EN29LV160C
2048K
1024K
16-bit)
100ms
48-Ball
EN29LV160CT
EN29LV160CB
en29lv160c
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Untitled
Abstract: No abstract text available
Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE 1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)
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CY62168DV30
16-Mbit
2048K
48-ball
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IN6AG
Abstract: 28F020 intel 28F020
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp
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28F020
2048K
32-Pin
32-LEAD
P28F020-70
N28F020-70
P28F020-90
IN6AG
intel 28F020
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BY324
Abstract: No abstract text available
Text: ACMCS034 *ACMCS034* AK5362048AWP 2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION T h e Accutek A K 5 3 6 2 0 4 8 A W P high density m em ory module is a C M O S dynamic RAM organized in 2048K x 36 bit words. The
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ACMCS034
ACMCS034*
2048K
BY324
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Untitled
Abstract: No abstract text available
Text: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read
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28F020
2048K
AP-316
AP-325
-80V05,
-80V05
28F020
4a2bl75
Qlbb077
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M28F020-20
Abstract: MD28F020-20/B
Text: in te l ß o n iy ß iß O A O tfr M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum
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M28F020
2048K
MD28F020-90
MD28F020-12
MD28F020-15
MD28F020-20
MF28F020-90
MF28F020-12
MF28F020-15
MF28F020-20
M28F020-20
MD28F020-20/B
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Untitled
Abstract: No abstract text available
Text: P R lO B M A IifR r ¡ n ie l M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum
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M28F020
2048K
MD28F020-90
MF28F020-90
MD28F020-12
MF28F020-12
MD28F020-15
MF28F020-15
MD28F020-20
MF28F020-20
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Untitled
Abstract: No abstract text available
Text: IßTEXAR X R -T 6 166 Codirectional Digital Data Processor FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-T6166 is a digital CM O S circuit which performs the interface function betweeh a 64kbit/s data stream and a 2048kbit/s PCM timeslot data channel. When
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XR-T6166
64kbit/s
2048kbit/s
XR-T6164,
XR-T6166
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory
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EDI8G322048C
2048KX32
322048C
2048K
1024Kx4
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Untitled
Abstract: No abstract text available
Text: DS1252Y PRELIMINARY DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock FEATURES PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 256K x 8 NV SRAM directly replaces volatile static
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DS1252Y
2048K
32-pin
32-PIN
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Untitled
Abstract: No abstract text available
Text: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte gral control circuitry and lithium
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bq4017/bq4017Y
2048Kx8
bq4017
216-bit
bq4017
2048K
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Untitled
Abstract: No abstract text available
Text: DS1252Y PRELIMINARY DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock FEATURES PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 256K x 8 NV SRAM directly replaces volatile static
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DS1252Y
2048K
32-pin
32-PIN
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Untitled
Abstract: No abstract text available
Text: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic
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EDI8M8256C70/100/120PC
256Kx8
EDI8M8256C
2048K
32Kx8
120ns
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Untitled
Abstract: No abstract text available
Text: EDI8M8257C 90/100/120/150 Module The fu tu re . . . today, i ÄDWÄNKgE DIMFÛI^IMIÂTDÛINI 256Kx8 SRAM CMOS, High Speed Module Features The EDI8M8257C is a 2048K 256Kx8 bit High Speed Static RAM module constructed using two EDI88128C (128Kx8) Static RAMs In teadless chip
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
EDI88128C
128Kx8)
128Kx8
32-pin,
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Untitled
Abstract: No abstract text available
Text: DPZ2MS16P □PM Dense-Pac Microsystems, Inc. O 2048K X 16 FLASH MEMORY MODULE PRELIMINARY D ESC RIPTIO N : The DPZ2M S16P is a 32 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices
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DPZ2MS16P
2048K
4096K
S16XP)
30A052-00
DPZ2MS16XP
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EDI8M8257C
Abstract: DDD15L
Text: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
The32
EDI8M8257LP)
I8M8257LP85P6C
EDI8M8257LP100P6C
DDD15L
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1024K
Abstract: No abstract text available
Text: Dense-Pac M icrosystem s, Inc. DPS1MS16P 1024K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised o f sixteen 128K X 8 SRAM devices and tw o high-speed decoders. The DPS1MS16P can be user configurable as 1024K X 16 o r as 2048K X 8 bits.
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DPS1MS16P
1024K
DPS1MS16P
2048K
DPS1MS16XP)
DPS1MS16XP
thePS1MS16P
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