NPN Transistor VCEO 1000V
Abstract: 2SC5416 NPN Transistor VCEO 1000V ic15a
Text: Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)
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EN5696
2SC5416
2079B-TO220FI
2SC5416]
NPN Transistor VCEO 1000V
2SC5416
NPN Transistor VCEO 1000V ic15a
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2SC4710
Abstract: 3688-1
Text: Ordering number:EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Package Dimensions unit:mm 2079B [2SC4710] 4.5 10.0 2.8 16.0 3.5 3.2 0.6 16.1 • High breakdown voltage VCEO min=2100V .
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EN3688A
2SC4710
100V/10mA
2079B
2SC4710]
O-220FI
2SC4710
3688-1
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EN5817
Abstract: TA-1043 2SC5417 58173
Text: Ordering number : EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage. • High reliability Adoption of HVP process . • Adoption of MBIT process. unit: mm 2079B-TO220FI (LS)
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EN5817
2SC5417
2079B-TO220FI
2SC5417]
EN5817
TA-1043
2SC5417
58173
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2SC5265
Abstract: EN5321 VCBO-1200V
Text: Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.
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EN5321
2SC5265
2079B
2SC5265]
O-220FI
2SC5265
EN5321
VCBO-1200V
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37021
Abstract: 11599HA 2SC4633 IC 37021
Text: Ordering number:EN3702A NPN Triple Diffused Planar Silicon Transistor 2SC4633 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=2.0pF). · Full-isolation package.
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EN3702A
2SC4633
200V/30mA
2079B
2SC4633]
O-220FI
37021
11599HA
2SC4633
IC 37021
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11599HA
Abstract: 2SC4631
Text: Ordering number:EN3700A NPN Triple Diffused Planar Silicon Transistor 2SC4631 900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Cob (typical Cob=5.0pF). · Full-isolation package.
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EN3700A
2SC4631
00V/300mA
2079B
2SC4631]
O-220FI
11599HA
2SC4631
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11599HA
Abstract: 2SC4634
Text: Ordering number:EN3703A NPN Triple Diffused Planar Silicon Transistor 2SC4634 1500V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1500V . · Small Cob (typical Cob=1.5pF). · Full-isolation package.
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EN3703A
2SC4634
500V/10mA
2079B
2SC4634]
O-220FI
11599HA
2SC4634
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Untitled
Abstract: No abstract text available
Text: Ordering number:5183 NPN Triple Diffused Planar Silicon Transistor 2SA1968 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–900V . · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process).
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2SA1968
2079B
2SA1968]
O-220FI
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2sa1968
Abstract: 5183 sanyo
Text: Ordering number:5183 NPN Triple Diffused Planar Silicon Transistor 2SA1968 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=–900V . · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process).
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2SA1968
2079B
2SA1968]
O-220FI
2sa1968
5183
sanyo
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2SC4635
Abstract: 11599HA
Text: Ordering number:EN3704A NPN Triple Diffused Planar Silicon Transistor 2SC4635 1500V/20mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1500V . · Small Cob (typical Cob=1.9pF). · Full-isolation package.
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EN3704A
2SC4635
500V/20mA
2079B
2SC4635]
O-220FI
2SC4635
11599HA
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TA-1239
Abstract: VCBO-1200V EN5884 2SC5305 TA1239
Text: Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
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EN5884
2SC5305
2079B
2SC5305]
O-220FI
TA-1239
VCBO-1200V
EN5884
2SC5305
TA1239
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2SC4632
Abstract: 11599HA ICP30
Text: Ordering number:EN3701A NPN Triple Diffused Planar Silicon Transistor 2SC4632 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1200V . · Small Cob (typical Cob=1.6pF). · Full-isolation package.
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EN3701A
2SC4632
200V/10mA
2079B
2SC4632]
O-220FI
2SC4632
11599HA
ICP30
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2SC4636 equivalent
Abstract: 2SC4636 11599HA EN3705A
Text: Ordering number:EN3705A NPN Triple Diffused Planar Silicon Transistor 2SC4636 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=1800V . · Small Cob (typical Cob=1.4pF). · Full-isolation package.
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EN3705A
2SC4636
800V/10mA
2079B
2SC4636]
O-220FI
2SC4636 equivalent
2SC4636
11599HA
EN3705A
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ta1238
Abstract: TA-1238 2SC5304 EN5883
Text: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm
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EN5883
2SC5304
2079B
2SC5304]
O-220FI
ta1238
TA-1238
2SC5304
EN5883
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Untitled
Abstract: No abstract text available
Text: I Ordering number:EN 3688 2SC4710 No.3688 NPN Triple Diffused Planar Silicon Transistor 2100V/10mA High-Voltage Amp, High-Voltage Switching Applications ; Features •High breakdown voltage Vceo min = 2100 V . • Small Cob (typical Cob = 1.3pF). • Wide ASO.
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2SC4710
100V/10mA
500//A
2079B
T0-220FI
73094MT
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2sc4630
Abstract: No abstract text available
Text: Ordering num ber: EN3699A N0.3699A 2SC4630 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage Vceo min=900V . • Small Cob (typical Cob=2.8pF). •Full isolation package.
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EN3699A
2sc4630
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3703a
Abstract: 2SC4634 4634
Text: O rd e rin g n u m b e r: EN3703A SA%YO No.3703A 2SC4634 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications i Features • High breakdown voltage VceO min = 1500V . • Small Cob (typical Cob = 1.5pF). • Full-isolation package.
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EN3703A
2SC4634
3703a
2SC4634
4634
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2SC4637
Abstract: No abstract text available
Text: O rd e rin g n u m b e r :E N 3706A N0.37O6A 2SC4637 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage Vceo min = 1800V . • Small Cob (typical Cob = 1.8pF). • Full-isolation package.
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EN3706A
2SC4637
2SC4637
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IC 37021
Abstract: 2SC4633 37021 EN3702A
Text: Ordering num ber:EN3702A _ 2SC4633 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = 1200V . •Small Cob (typical Cob = 2.0pF). ■Full-isolation package.
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EN3702A
2SC4633
IC 37021
37021
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2SA1968
Abstract: No abstract text available
Text: Ordering number : EN 5183 _ 2SA1968 No.5183 NPN Triple Diffused Planar Silicon Transistor MYD High-Voltage Amp, High-Voltage Switching Applications F eatu re s • High breakdown voltage Vceo min = —900V . • Small Cob(Cobtyp = 2.2pF).
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2SA1968
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2079B
Abstract: AX-7506 2SC4631 TA-0465
Text: Ordering number:EN3700A ;_ 2SC4631 NPN Triple Diffused P lanar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F e a tu r e s • High breakdow n voltage V c e o m in = 900V . • Sm all Cob (typical Cob = 5.0pF). • Full-isolation package.
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2SC4631
2079B
AX-7506
2SC4631
TA-0465
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: E N 3704A _ 2SC4635 NPN Triple Diffused Planar Silicon Transistor 1500V/20mA High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage Vceo min= 1500V . •Small Cob (typical Cob = 1.9pF).
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2SC4635
500V/20mA
100hA
2079B
O-220FIGLS)
80296YK
TA-0465,
AX-7506
0020S34
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IC 37021
Abstract: 2sc4633
Text: I O rd e rin g num ber:E N 3702A _ SAiYO i 2SC4633 NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications Feature^ • High breakdown voltage Vceo min = 1200V . • Small Cob (typical Gob= 2.0pF).
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2SC4633
200V/30mA
100mA
2079B
O-220FKLS)
80296YK
TA-0465,
AX-7506
IC 37021
2sc4633
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EN5321
Abstract: 2SC5265 2SC526 TA064 p60e
Text: Ordering number: EN5321 SAMYO No.5321 _ 2SC5265 i NPN Triple Diffused Planar Silicon Transistor Inverter-controlled Lighting Applications Features •High breakdown voltage Vcbo - 1200V . • High reliability (Adoption of HVP process).
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EN5321
2SC5265
EN5321
2SC5265
2SC526
TA064
p60e
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