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    2088 DIODE Search Results

    2088 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    2088 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DMS2120LFWB

    Abstract: No abstract text available
    Text: DATE: 29 November, 2012 PCN #: 2088 PCN Title: Datasheet Revision Due to Relaxation of Min VR, Max VF, and/or Max IR Specification Limits Dear Customer: This is an announcement of change s to products that are currently being


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    PDF DMS2120LFWB-7 DMS2220LFDB-7 DIC-034 DMS2120LFWB

    Untitled

    Abstract: No abstract text available
    Text: SUMMIT SMS48 MICROELECTRONICS, Inc. PRELIMINARY INFORMATION 1 SEE LAST PAGE Quad Programmable Precision Supervisory Controller With Independent Resets FEATURES INTRODUCTION z Operational from any of four Voltage Monitoring Inputs z Four Independent Programmable Reset Outputs


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    PDF SMS48 SMS48

    1N4148

    Abstract: MO-137 SMS48 ST Microelectronics date code format
    Text: SUMMIT SMS48 MICROELECTRONICS, Inc. PRELIMINARY INFORMATION 1 SEE LAST PAGE Quad Programmable Precision Supervisory Controller With Independent Resets FEATURES INTRODUCTION z Operational from any of four Voltage Monitoring Inputs z Four Independent Programmable Reset Outputs


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    PDF SMS48 SMS48 1N4148 MO-137 ST Microelectronics date code format

    A1W TRANSISTOR

    Abstract: ir sensor 4m range BFR92 application note diode a4W 18 diode a4W ccd image area sensor 120 fps DALSA AREA CCD transistor a3y FTF2021M
    Text: IMAGE SENSORS FTF2021M 4M Full-Frame CCD Image Sensor Preliminary Product Specification DALSA Professional Imaging March 2009 DALSA Professional Imaging Preliminary Product Specification 4M Full-Frame CCD Image Sensor FTF2021M Table of Contents 1. Description . 3


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    PDF FTF2021M FTF2021M A1W TRANSISTOR ir sensor 4m range BFR92 application note diode a4W 18 diode a4W ccd image area sensor 120 fps DALSA AREA CCD transistor a3y

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-1624 SERIES AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) IMPED. IN/OUT (Ohms) VSWR (Max.) NOISE FIGURE (dB, Typ.) 45 Third Order Intercept 38 37 36 35 34 33 40 35 30 1.0 250 500 750 1000 1250 1500 1750 2000 2250 2500


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    PDF AM-1624 AM-1624-2500

    ccd application vns

    Abstract: CCD IMAGE QUANTUM CAPACITIVE diode a4W qmax 999 AN11 BAS28 BAT74 BG40 CM500
    Text: IMAGE SENSORS FTF3021M 6M Full-Frame CCD Image Sensor Preliminary Product Specification October 7, 2008 DALSA Professional Imaging October 7, 2008 1 DALSA Professional Imaging Preliminary Product Specification 6M Full-Frame CCD Image Sensor FTF3021M Table of Contents


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    PDF FTF3021M FTF3021M. FTF3021M FTF3021M/TG FTF3021M/EG FTF3021M/IG FTF3021M/HG ccd application vns CCD IMAGE QUANTUM CAPACITIVE diode a4W qmax 999 AN11 BAS28 BAT74 BG40 CM500

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-1622 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 5–1000 AM-1622-1000 41 0.75 2.0:1 50/50 3.1 17 15 130 2 5–2000 AM-1622-2000 41 0.75 2.0:1 50/50 3.3 17


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    PDF AM-1622 AM-1622-1000 AM-1622-2000 AM-1622-2500

    Untitled

    Abstract: No abstract text available
    Text: MITEQ AM-1352 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 1–1000 AM-1352-1000 20 0.5 2.0:1 50/50 3.6 17 15 95 1 1–2000 AM-1352-2000 20 0.75 2.0:1 50/50 3.7


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    PDF AM-1352 AM-1352-1000 AM-1352-2000 AM-1352-2500

    miteq au series satcom if amplifiers

    Abstract: No abstract text available
    Text: MITEQ AM-1185 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1185-1000 AM-1185-2000 28 28 0.5 1 2.0:1 2.0:1 50/50 50/50 3.4 3.5 12 10 FREQUENCY (MHz) 1–1000


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    PDF AM-1185 AM-1185-1000 AM-1185-2000 200ion, 2002/96/EC 2002/96/EC miteq au series satcom if amplifiers

    transistor H1A

    Abstract: h1a transistor transistor H1A H2A sony CCD ICX452AQ ICX452AQ H1A marking TO-78 package
    Text: ICX452AQ Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQ is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a


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    PDF ICX452AQ ICX452AQ AS-B6-02 transistor H1A h1a transistor transistor H1A H2A sony CCD ICX452AQ H1A marking TO-78 package

    transistor H1A

    Abstract: transistor H1A H2A h1a transistor marking v6 78 diode icx452 H1A marking V6 69 diode package marking v5a ICX452AQF
    Text: ICX452AQF Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQF is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a


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    PDF ICX452AQF ICX452AQF AS-B7-03 transistor H1A transistor H1A H2A h1a transistor marking v6 78 diode icx452 H1A marking V6 69 diode package marking v5a

    44355

    Abstract: ups 2581 v
    Text: MITEQ AM-1367 SERIES AMPLIFIER FREQUENCY MHz 20–3000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1367 38 1.25 2.2:1 50/50 6 18 41 21 40 20 260 3 19 39 P1dB Gain (dB) 15


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    PDF AM-1367 1000staff, 44355 ups 2581 v

    scientific imaging technologies

    Abstract: scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424A SI-424 mpp schematic TRANSISTOR S1A 41
    Text: SCIENTIFIC IMAGING TECHNOLOGIES, INC. 2048 x 2048 pixel format 24µm square • Front-illuminated or thinned, back-illuminated versions ■ Unique thinning and Quantum Efficiency enhancement processes ■ Excellent QE from IR to UV ■ Anti-reflection coating


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    PDF SI-424A 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08 1E-01 scientific imaging technologies scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424 mpp schematic TRANSISTOR S1A 41

    mdd3752

    Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
    Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


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    PDF MDD3752 MDD3752 MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA

    9127 diode

    Abstract: 19051 T1059N T1589N T2159N T308N T458N T459N T709N kb 778
    Text: M6C-Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] [W] 35 245 340 407 534 569 778 914 1113 1318


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    PDF T308N T458N T709N T1059N T1589N T2159N 9127 diode 19051 T1059N T1589N T2159N T308N T458N T459N T709N kb 778

    1110 DFN8

    Abstract: SBOS686 marking LT8
    Text: TMP451 www.ti.com SBOS686 – JUNE 2013 ±1°C Remote and Local Temperature Sensor with η-Factor and Offset Correction, Series Resistance Cancellation, and Programmable Digital Filter Check for Samples: TMP451 FEATURES DESCRIPTION • The TMP451 is a high-accuracy, low-power remote


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    PDF TMP451 SBOS686 TMP451 1110 DFN8 SBOS686 marking LT8

    Untitled

    Abstract: No abstract text available
    Text: TMP451 www.ti.com SBOS686 – JUNE 2013 ±1°C Remote and Local Temperature Sensor with η-Factor and Offset Correction, Series Resistance Cancellation, and Programmable Digital Filter Check for Samples: TMP451 FEATURES DESCRIPTION • The TMP451 is a high-accuracy, low-power remote


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    PDF TMP451 SBOS686 TMP451 12-bit

    IR LFN

    Abstract: mosfet 350v 10A IRFP340R IRFP341R IRFP342R IRFP343R power mosfet 350v to 247 irfip341r N-channel MOSFET to-247 50a
    Text: Rugged Power MOSFETs. IRFP340R, IRFP341R, IRFP342R, IRFP343R File Number 2088 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDs on = 0.550 and 0.800 N -C H A N N E L E N H A N C E M E N T M O D E Feature«: • Single pulse avalanche energy rated


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    PDF IRFP340R, IRFP341R, IRFP342R, IRIFP343R IRFP342R IRFP343R 92CS-4265Â IR LFN mosfet 350v 10A IRFP340R IRFP341R power mosfet 350v to 247 irfip341r N-channel MOSFET to-247 50a

    centronic osd100 6

    Abstract: OSD15-5T OSD50-5T LD35-5T OSD35-5T LD20-5T OSD100-5T OSD5-ST OSD60-5T QD100-5T
    Text: Series 5T Blue Sensitive for Biased or Unbiased Operation The Centronic Series 5 T photodiodes offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 4 3 0 - 900nm where the highest signal to noise ratio


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    PDF 900nm MD25-5T MD100-5T MD144-5T centronic osd100 6 OSD15-5T OSD50-5T LD35-5T OSD35-5T LD20-5T OSD100-5T OSD5-ST OSD60-5T QD100-5T

    centronic osd100 6

    Abstract: OSD15-5T Centronic osd15-5t LD35-5T OSD100-5T OSD1-5T QD7-5T OSD5-5T QD50-5T ld12a
    Text: C E N T RO NI C INC-, E-0 »IV b2E » • mSSSO D0 D D 4 7 b 770 M C E N B Series 5T_ Blue Sensitive for Biased or Unbiased Operation The Centronic Series 5 T photodiodes offer high blue sensitivity coupled with high shunt resistance and low dark leakage


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    PDF D0GG47b 900nm MD25-5T MD100-5T MD144-5T centronic osd100 6 OSD15-5T Centronic osd15-5t LD35-5T OSD100-5T OSD1-5T QD7-5T OSD5-5T QD50-5T ld12a

    Zener 2458

    Abstract: 1N744A 1n4370 zener 1N745
    Text: Microsemi Zener Regulator Diodes Part N um ber ZEN M icrosem i i Package D ivision I O utline Type M il Spec P ow er Data S heet ID W j Ì Vz (V) Izt (mA) Zzt (n ) Zzk (n ) IR i VR ; Toi, 1 (uA ) 1 (V) (+/-%) 1N744A Scottsdale 5198 0.25 180 1 1200 5 Scottsdale


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    PDF DO-35 DO-213AA -213AA Zener 2458 1N744A 1n4370 zener 1N745

    IR-2140

    Abstract: 03254
    Text: LASER COMPONENTS GmbH Hausanschrift / Address Werner-von-Siemens-Str. 15 82140 Olching / Germany Phone +49 8142 2864-0 • Fax +49 8142 2864-11 [email protected] • www.lasercomponents.com Datasheet for Order , LC Order Part Customer Number Numer Numer


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    PDF IR-2140. IR-2140-GMP-Premium. 397-HV-1-189. 12/May/2005 397-HV-1-189 12/May/2005 IR-2140 03254

    sef820

    Abstract: SEF822 2088 DIODE
    Text: S 6 S-THÔMSON .D7E » H 7121537 OOiaO'-l'ï b | “ 73C 1 7 5 4 6 HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement, mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS P«0,


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    PDF SEF820 SEF821 SEF822 SEF823 00V/450V 00V/450V 300/is, C-271 2088 DIODE

    4511 MOSFET

    Abstract: FP3-40 T 4512 H diode diode T 4512 H mosfet irfp 250 N
    Text: h a r r is IRFP340R, IRFP341R IRFP342R, IRFP343R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T O -2 4 7 • 11A and 8.7A, 350V and 400V TOP VIEW • rDS on = 0 .5 5 n and 0 .8 0 0 • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited


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    PDF IRFP340R, IRFP341R IRFP342R, IRFP343R IRFP341R, IRFP343R JRFP340R, 4511 MOSFET FP3-40 T 4512 H diode diode T 4512 H mosfet irfp 250 N