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    20N60Q Search Results

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    20N60Q Price and Stock

    IXYS Corporation IXFH20N60Q

    MOSFET N-CH 600V 20A TO247AD
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    DigiKey IXFH20N60Q Tube
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    IXYS Corporation IXFT20N60Q

    MOSFET N-CH 600V 20A TO268
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    IXYS Integrated Circuits Division IXFH20N60Q

    MOSFET DIS.20A 600V N-CH TO247-3 HIPERFET THT
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    Ozdisan Elektronik IXFH20N60Q
    • 1 $8.42204
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    20N60Q Datasheets Context Search

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    20N60Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 20N60Q IXFT 20N60Q VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 W trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR


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    PDF 20N60Q 250ns O-247 20N60Q

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 20N60Q IXFT 20N60Q VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 W trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR


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    PDF 20N60Q 20N60Q 250ns O-247 O-268 O-268AA

    20N60Q

    Abstract: transistor N 343 AD
    Text: IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 20N60Q 250ns O-247 O-268 728B1 123B1 728B1 065B1 20N60Q transistor N 343 AD

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 RDS on Q Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25


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    PDF 20N60Q 20N60Q 250ns O-247 O-268 O-268

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings


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    PDF 20N60Q 20N60Q 250ns O-247 O-268 O-268 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXFH 20N60Q IXFT 20N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 20 A 0.35 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 20N60Q 250ns O-247 O-268 728B1 123B1 728B1 065B1

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information V.DSS IXFH 20N60Q IXFT 20N60Q HiPerFET Power MOSFETs = D25 Q Class DS on = 600 V 20 A 0.35 Q trr < 250ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Maximum Ratings Symbol Test C onditions


    OCR Scan
    PDF 20N60Q 250ns

    IXYS DS 145

    Abstract: RFT e 355 d
    Text: IQIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 20N60Q IXFT 20N60Q DSS D25 R Q Class DS on — — — 600 V 20 A 0.35 Q trr < 250ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Symbol dv/dt Test Conditions


    OCR Scan
    PDF 20N60Q 20N60Q 250ns O-247 O-268 IXYS DS 145 RFT e 355 d

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


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    PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10