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    20N10 Search Results

    20N10 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    NP20N10YDF-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP20N10YDF-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    20N10 Price and Stock

    Infineon Technologies AG IPG20N10S436AATMA1

    MOSFET 2N-CH 100V 20A 8TDSON
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    DigiKey IPG20N10S436AATMA1 Cut Tape 67,608 1
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    Mouser Electronics IPG20N10S436AATMA1 14,265
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    Rochester Electronics IPG20N10S436AATMA1 3,203 1
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    Infineon Technologies AG IPG20N10S4L35ATMA1

    MOSFET 2N-CH 100V 20A 8TDSON
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    DigiKey IPG20N10S4L35ATMA1 Cut Tape 35,676 1
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    Infineon Technologies AG IPG20N10S4L22AATMA1

    MOSFET 2N-CH 100V 20A 8TDSON
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    DigiKey IPG20N10S4L22AATMA1 Digi-Reel 21,605 1
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    Infineon Technologies AG IQD020N10NM5ATMA1

    TRENCH >=100V
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    DigiKey IQD020N10NM5ATMA1 Digi-Reel 4,985 1
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    Mouser Electronics IQD020N10NM5ATMA1 4,253
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    Vishay Siliconix SQM120N10-3M8_GE3

    MOSFET N-CH 100V 120A TO263
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    New Advantage Corporation SQM120N10-3M8_GE3 1,600 1
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    Find more 20N10 price and stock on Findchips.com

    20N10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    20N100D2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    20N100E2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 20N100 O-247 O-268

    20N100

    Abstract: No abstract text available
    Text: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 O-220AB O-263 728B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N100 20N100 O-220AB O-263 O-220haracteristic

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGA 20N100 IXGP 20N100 IGBT Symbol Test Conditions VCES IC25 VCE sat Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 20N100 O-220AB O-263

    Untitled

    Abstract: No abstract text available
    Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 20N100 20N100 O-268 O-247 O-268AA

    11n1000

    Abstract: CRP-10N-250 11N100
    Text: CRP-N Series BI-DIRECTIONAL COUPLERS 5 to 1500 MHz / Wideband / Low Profile 0.2" Device / Meri-Pac / PC Mount for Auto-Insertion PRINCIPAL SPECIFICATIONS Frequency Range, MHz Model Number CRP-10N-250 CRP- 20N-250 5 - 500 5 - 500 CRP-11N-1000 100 - 1500 CRP- 20N-1000


    Original     		PDF CRP-10N-250 20N-250 CRP-11N-1000 20N-1000 MIL-C-15370 25Mar96 11n1000 CRP-10N-250 11N100

    MANCHESTER ENCODER, DECODER AND CVSD SYSTEM

    Abstract: manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 CMX649 MICR505 20n10 voice activated switch project
    Text: Application Note CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX649 Wireless Voice Link Design Guide AN/2WR/649Des/2 November 2004 1 Introduction The CMX649 is an innovative adaptive delta modulation ADM voice codec that was designed to serve in advanced wireless voice links. The purpose of this document is


    Original     		PDF CMX649 AN/2WR/649Des/2 MANCHESTER ENCODER, DECODER AND CVSD SYSTEM manchester cvsd delta modulation tutorial Ultralife Batteries variable slope delta modulation tutorial DE6492 MICR505 20n10 voice activated switch project

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous


    Original     		PDF 20N120 247TM

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IXGH 20N100 IXGT 20N100 IGBT Symbol Test Conditions v CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IGBT IXGA 20N100 IXGP 20N100 V CES = ^C25 V CE sat = 1000 V 40 A 3.0 V Maximum Ratings Symbol Test Conditions V CES VCGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGE = 1 M£2 1000 V V GES Continuous ±20 V


    OCR Scan     		PDF 20N100 O-22QAB

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT IX G H 2 0 N 1 0 0 IX G T 2 0 N 1 0 0 V CES ^C25 v CE sat ¡>c Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 1000 V V CGR T j = 25° C to 150° C; RGE = 1 MQ 1000 V v GES Continuous ±20 V VGEM Transient


    OCR Scan     		PDF O-268 O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: TOKO AMERICA INC FMK S^E ]> m ? b 3 2 0002533 T2 2 • TAI TOKO Series DC-DC Converters ■ OVERVIEW TOKO’s engineers designed these converter modules with primary emphasis on small size, lightweight and low cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for


    OCR Scan     		PDF TDb7b32

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    20n10

    Abstract: MTM20N10 MTP20N10 MOSFET based SSR mtp20n08
    Text: M O TO ROLA SEMICONDUCTOR TECHNICAL DATA M TM 20N 10 M T P 20 N 08 M T P 20 N 10 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r IM-Channel E n h a n c e m e n t-M o d e S ilic o n G a te T M O S TMOS POWER FETs 20 AMPERES rDS on = ° -15 0H M


    OCR Scan     		PDF 21A-04 O-220AB 20n10 MTM20N10 MTP20N10 MOSFET based SSR mtp20n08

    20n80

    Abstract: 20N90 20N80A 20N100
    Text: 4686226 I X Y S CORP ¡J3 ß T | MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r


    OCR Scan     		PDF IXGH20N80, IXGM20N80, IXGH20N80 IXGM20N80 IXGH20N90 IXGH20N100 IXGM20N90 IXGM20N100 20n80 20N90 20N80A 20N100

    1RF530

    Abstract: 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533
    Text: ' 3469674 -û M FAIRCHILD IR f a i r c h i D E ~ 1 a M fib V M SEMICONDUCTOR ^ M A Schlumberger C om pany F 1 3 0 - 1 3 3 /IR T P 2 0 N A , 27859 F 5 3 0 - 5 3 3 0 8 /2 0 N N - C h a n n e l


    OCR Scan     		PDF IRF130-133/IRF530-533 MTP20N08/20N10 O-204AA O-220AB IRF530 IRF53RATUREâ IRF130-133 IRF530-533 B4bclti74 1RF530 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533