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onsemi NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVH4L020N120SC1	Tube	1,342		1	1 $44.98 10 $44.98 100 $35.38533 1000 $35.38533 10000 $35.38533	Buy Now
Newark	NVH4L020N120SC1	Bulk	258		1	1 $39.83 10 $38.73 100 $32.96 1000 $31.86 10000 $31.86	Buy Now
Richardson RFPD	NVH4L020N120SC1				450	1 - 10 - 100 - 1000 $35.39 10000 $35.39	Buy Now
Avnet Silica	NVH4L020N120SC1		180	18 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVH4L020N120SC1		180	19 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	NVH4L020N120SC1		150		1	1 - 10 - 100 $63.88 1000 $59.11 10000 $59.11	Buy Now
onsemi NVBG020N120SC1 MOSFET N-CH 1200V 8.6A/98A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NVBG020N120SC1	Cut Tape	1,143		1	1 $47.63 10 $35.799 100 $47.63 1000 $47.63 10000 $47.63	Buy Now
	NVBG020N120SC1	Digi-Reel	1,143		1	1 $47.63 10 $35.799 100 $47.63 1000 $47.63 10000 $47.63	Buy Now
	NVBG020N120SC1	Reel	800		800	1 - 10 - 100 - 1000 $34.63413 10000 $34.63413	Buy Now
Mouser Electronics	NVBG020N120SC1		774			1 $43.37 10 $35.8 100 $34.64 1000 $34.1 10000 $34.1	Buy Now
Newark	NVBG020N120SC1	Cut Tape	742		1	1 $38.98 10 $37.91 100 $32.26 1000 $31.19 10000 $31.19	Buy Now
Rochester Electronics	NVBG020N120SC1		3,800		1	1 $38.48 10 $38.48 100 $36.17 1000 $32.71 10000 $32.71	Buy Now
Richardson RFPD	NVBG020N120SC1				800	1 - 10 - 100 - 1000 $34.63 10000 $34.63	Buy Now

Avnet Silica	NVBG020N120SC1			18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NVBG020N120SC1		1,600	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NVBG020N120SC1		1,600		1	1 - 10 - 100 - 1000 $43.46 10000 $40.56	Buy Now
Wuhan P&S	NVBG020N120SC1		671		1	1 $96.59 10 $96.59 100 $61.65 1000 $46.74 10000 $46.74	Buy Now
Infineon Technologies AG IHW20N120R5XKSA1 IGBT 1200V 40A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IHW20N120R5XKSA1	Tube	635		1	1 $4.26 10 $4.26 100 $2.356 1000 $1.62584 10000 $1.47712	Buy Now
Avnet Americas	IHW20N120R5XKSA1	Tube		19 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	IHW20N120R5XKSA1	Bulk	147		1	1 $4.02 10 $3.51 100 $2.31 1000 $2.13 10000 $2.13	Buy Now
Rochester Electronics	IHW20N120R5XKSA1		240		1	1 $1.64 10 $1.64 100 $1.54 1000 $1.39 10000 $1.39	Buy Now
TME	IHW20N120R5XKSA1		79		1	1 $3.76 10 $2.99 100 $2.69 1000 $2.69 10000 $2.69	Buy Now

Chip1Stop	IHW20N120R5XKSA1	Tube	350			1 $2.52 10 $2.12 100 $1.71 1000 $1.54 10000 $1.54	Buy Now
EBV Elektronik	IHW20N120R5XKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IHW20N120R5XKSA1		7,302			1 - 10 - 100 $1.322 1000 $1.074 10000 $1.074	Buy Now
STMicroelectronics SCTWA20N120 IC POWER MOSFET 1200V HIP247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCTWA20N120	Tube	526		1	1 $14.06 10 $11.091 100 $14.06 1000 $8.90698 10000 $8.71551	Buy Now
Avnet Americas	SCTWA20N120	Bulk		32 Weeks	600	1 - 10 - 100 - 1000 $7.425 10000 $6.96429	Buy Now
STMicroelectronics	SCTWA20N120		600		1	1 $12.19 10 $10.8 100 $9.25 1000 $8.72 10000 $8.72	Buy Now
TME	SCTWA20N120		1		1	1 $15.44 10 $15.44 100 $13.51 1000 $11.31 10000 $11.31	Buy Now
Avnet Silica	SCTWA20N120			17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	SCTWA20N120			33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGK120N120A3 IGBT PT 1200V 240A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGK120N120A3	Tube	423		1	1 $47.83 10 $47.83 100 $38.0892 1000 $38.0892 10000 $38.0892	Buy Now

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20N120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
20N120E2		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

20N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IC IGBT 20N120 Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	PDF	20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1
20n120 Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
IC IGBT 20N120 Abstract: IXDH20N120AU1 ixdh20n120au 20N120 Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	PDF	20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au
Untitled Abstract: No abstract text available Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	PDF	20N120B O-268 O-247 728B1 123B1 065B1
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140
IXGH20N120BD1 Abstract: IXGH 20N120BD1 Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1
20N120D1 Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	PDF	20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
Untitled Abstract: No abstract text available Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	PDF	20N120 20N120 O-268 O-247 O-268AA
MJ480 Abstract: No abstract text available Text: IXDA 20N120AS High Voltage IGBT IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK	Original	PDF	20N120AS 20110118a MJ480
20N120 Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	20N120 728B1 123B1 728B1 065B1 20N120
20N120BD1 Abstract: ixys dsep 8-12a Text: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	20N120B 20N120BD1 IC110 O-220 728B1 123B1 065B1 20N120BD1 ixys dsep 8-12a
20N120 Abstract: IC IGBT 20N120 Text: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ	Original	PDF	20N120 O-247 IXDH20N120AU1 D-68623 IC IGBT 20N120
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings	Original	PDF	20N120B IC110 O-268 O-247 728B1
Untitled Abstract: No abstract text available Text: IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) IGBT = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	20N120 O-247 O-268 O-268 728B1

Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	20N120 OT-227 E153432 728B1 123B1 728B1 065B1
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous	Original	PDF	20N120 247TM
Untitled Abstract: No abstract text available Text: IXDA 20N120AS IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK	Original	PDF	20N120AS O-263 20110118a
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings	Original	PDF	20N120B O-268 IC110 728B1 123B1 728B1 065B1 20N120B
Untitled Abstract: No abstract text available Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G G E E IXDH 20N120 Preliminary Data IXDH 20N120 D1 Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	PDF	20N120 20N120 O-247 IXDH20N120D1 D-68623
IC IGBT 20N120 Abstract: 20N120 Text: IGBT IXGA 20N120 VCES IXGP 20N120 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C	Original	PDF	20N120 O-220AB O-263 728B1 IC IGBT 20N120
TO-247 weight Abstract: 20N120 20N120 IGBT Text: IGBT IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	20N120 O-247 O-268 O-268 728B1 TO-247 weight 20N120 IGBT
IXDH20N120D1 Abstract: IXDH20N120 20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	PDF	20N120 20N120 O-247 IXDH20N120D1 IXDH20N120D1 IXDH20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	OCR Scan	PDF	MGW20N 120/D 20N120 MGW20N120/D
Untitled Abstract: No abstract text available Text: □IXYS High Voltage IGBT with optional Diode IXDH 20N120 IXDH 20N120 D1 V CES ^C25 vCE sat typ 1200 V 38 A 2.4 V Short Circuit SOA Capability Square RBSOA IXDH 20N120 Preliminary Data Symbol Conditions IXDH 20N120 D1 Maximum Ratings VCES Tj = 25°C to 150°C	OCR Scan	PDF	20N120 20N120

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20N120 Price and Stock

onsemi NVH4L020N120SC1

onsemi NVBG020N120SC1

Infineon Technologies AG IHW20N120R5XKSA1

STMicroelectronics SCTWA20N120

IXYS Corporation IXGK120N120A3

20N120 Datasheets (1)

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IXDH20N120D1

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