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    20N60A4D Search Results

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    20N60A4D Price and Stock

    onsemi HGTG20N60A4D

    IGBT 600V 70A 290W TO247
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    DigiKey HGTG20N60A4D Tube
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    Newark HGTG20N60A4D Bulk 1
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    Fairchild Semiconductor Corporation HGTG20N60A4D

    600 V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
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    ComSIT USA HGTG20N60A4D 21
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    Win Source Electronics HGTG20N60A4D 1,847
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    20N60A4D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HGTG20N60A4D

    Abstract: No abstract text available
    Text: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. PDF

    20N60A4D

    Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
    Text: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247 PDF

    20n60a4d

    Abstract: HGTG20N60A4D TA49372
    Text: 20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20n60a4d TA49372 PDF

    20N60A4D

    Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D
    Text: 20N60A4D, 20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG20N60A4D, HGT4E20N60A4DS 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    20N60A4D

    Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339
    Text: 20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339 PDF

    20n60a4d

    Abstract: TA49372 20N60A4 HGTG*N60A4D TA49341 HGTG20N60A4D LD26 TA49339 HGTG
    Text: 20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20n60a4d TA49372 20N60A4 HGTG*N60A4D TA49341 LD26 TA49339 HGTG PDF