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    2133M Search Results

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    2133M Price and Stock

    CTS Corporation 635P3I2133M0000

    7.0mmx5.0mm Surface Mount LVPECL
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    DigiKey 635P3I2133M0000 Reel 1,000
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    CTS Corporation 635L3I2133M0000

    7.0mmx5.0mm Surface Mount LVDS C
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    DigiKey 635L3I2133M0000 Reel 1,000
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    Microchip Technology Inc DSC1223CI2-133M3333

    MEMS OSC XO 133.3333MHZ LVDS SMD
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    DigiKey DSC1223CI2-133M3333 1
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    Avnet Americas DSC1223CI2-133M3333 Tube 4 Weeks 330
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    Mouser Electronics DSC1223CI2-133M3333 76
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    Newark DSC1223CI2-133M3333 Bulk 330
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    Microchip Technology Inc DSC1223CI2-133M3333 Tube 4 Weeks
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    NAC DSC1223CI2-133M3333 Tube 220
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    Avnet Silica DSC1223CI2-133M3333 6 Weeks 110
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    Master Electronics DSC1223CI2-133M3333
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    Microchip Technology Inc VC-801-1052-133M000000

    CUSTOM CMOS XO
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    DigiKey VC-801-1052-133M000000 Reel
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    Seiko Epson Corporation SG-8018CG-50.2133M-TJHPA0

    XTAL OSC XO 50.2133MHZ CMOS SMD
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    DigiKey SG-8018CG-50.2133M-TJHPA0 Reel 1,000
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    2133M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ddr3

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX2133C10D3T1K2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-2133MHz CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) d ye Ke d ye Ke d ye Ke 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin)


    Original     		PDF KHX2133C10D3T1K2/8GX 64-Bit DDR3-2133MHz 240-Pin 160ns KHX2133C10D3T1K2/8GX 64bit DDR3-2133 ddr3

    Untitled

    Abstract: No abstract text available
    Text: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for


    Original     		PDF PI2DDR3212 2133Mbps, 14-bit 2133Mbps PI2DDR3212 14-bit MO-220 52-Pin, PD-2102

    E1751E20

    Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features


    Original     		PDF EDJ2108DEBG-MQ 2133Mbps) EDJ2116DEBG-MQ EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) E1751E20 EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L

    ddr3

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX2133C9BD3T1K2/4GX 4GB 2GB 256M x 64-Bit x 2 pcs. DDR3-2133MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) d ye Ke d ye Ke d ye Ke 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin)


    Original     		PDF KHX2133C9BD3T1K2/4GX 64-Bit DDR3-2133MHz 240-Pin 160ns KHX2133C9BD3T1K2/4GX 64bit DDR3-2133 ddr3

    Untitled

    Abstract: No abstract text available
    Text: PI2DDR3212 1.35V/ 1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description ÎÎ14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 This 14-bit DDR3/DDR4 switch is designed for 1.35V/ 1.5V/ 1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for


    Original     		PDF PI2DDR3212 2133Mbps, 14-bit 2133Mbps PI2DDR3212 14-bit MO-220 52-Pin, PD-2102 PI2DDR3212ZLE

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    Untitled

    Abstract: No abstract text available
    Text: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C


    Original     		PDF IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 cycles/64 cycles/32 3TR81280BL -125JBL

    Untitled

    Abstract: No abstract text available
    Text: Priliminary 288pin DDR4 SDRAM Registered DIMM DDR4 SDRAM Registered DIMM Based on 4Gb M-die HMA451R7MFR8N HMA41GR7MFR4N HMA42GR7MFR4N *SK hynix reserves the right to change products or specifications without notice. Rev. 0.01 /Jun. 2013 1 Priliminary Revision History


    Original     		PDF 288pin HMA451R7MFR8N HMA41GR7MFR4N HMA42GR7MFR4N

    Untitled

    Abstract: No abstract text available
    Text: Agilent U7231B DDR3 and LPDDR3 Compliance Test Application for Infiniium Series Oscilloscopes Datasheet Test, debug and characterize your DDR3 and LPDDR3 designs quickly and easily The Agilent Technologies U7231B DDR3 and LPDDR3 compliance test application provides a fast and easy


    Original     		PDF U7231B U7231B JESD79-3E JESD79-3-1 5990-9885EN

    NT5CB64M16DP

    Abstract: nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m
    Text: NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP 1Gb DDR3 D-die SDRAM Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EI* -FK* DDR3/L-1066-CL7 (DDR3/L-1333-CL8) (DDR3/L-1600-CL10) (DDR3-1866-CL11) (DDR3-2133-CL13) Units


    Original     		PDF NT5CB128M8DN/NT5CB64M16DP NT5CC128M8DN/NT5CC64M16DP DDR3/L-1066-CL7) DDR3/L-1333-CL8) DDR3/L-1600-CL10) DDR3-1866-CL11) NT5CB64M16DP nt5cb64m16 DDR3-2133-CL13 DDR3 pin out NT5CB64M16D NT5CB64m

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 x8/78

    Untitled

    Abstract: No abstract text available
    Text: THICK FILM CHIP RESISTORS HPL SERIES LOW RESISTANCE, LOW TCR, HIGH POWER • Features ‧Suitable for lead free soldering. ‧Compatible with flow and reflow soldering ■ Applications ‧Consumer Electronics ‧SMPS, M/B ‧Portable Device ‧Measurement instrument


    Original     		PDF 1000MÎ

    K4B2G1646C-HCH9

    Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
    Text: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646C 96FBGA K4B2G1646C-HCH9 K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133

    NT5CB128m16FP

    Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP x8/78 NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F

    2310 dhi

    Abstract: NT5CB64M16DP nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14
    Text: 1Gb DDR3 SDRAM NT5CB128M8DN / NT5CB64M16DP NT5CC128M8DN / NT5CC64M16DP Feature Table 1: CAS Latency Frequency Speed Bins Parameter -BE* -CF/CFI* -DH/DHI* -EJ* -FK* DDR3/L-1066 DDR3/L-1333 DDR3/L-1600 DDR3-1866 DDR3-2133 CL7 CL8 CL10 CL12 CL13 Units Min. Max.


    Original     		PDF NT5CB128M8DN NT5CB64M16DP NT5CC128M8DN NT5CC64M16DP DDR3/L-1066 1600Mbps. 1600Mbps DDR3-1866 DDR3-1866 2310 dhi nt5cb64m16 NT5CB128 DDR3 pin out NT5CB64M16D NT5CB128M8DN-CF NT5CB64M16dpcf CL-14

    NT5CB128M16FP

    Abstract: NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 155es x8/78 NT5CB128M16FP NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN

    K4B2G1646Q-BCK0

    Abstract: K4B2G1646q
    Text: Rev. 1.0, Aug. 2013 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA K4B2G1646Q-BCK0 K4B2G1646q

    k4b1g1646g-bck0

    Abstract: K4B1G1646G-BCH9 K4B1G1646G K4B1G1646G-BCF8 K4B1G1646G-BCNB K4B1G1646G 1600 K4B1G1646GBCH9 K4B1G16 470 ohm resistance DDR3-2133
    Text: Rev. 1.0, Nov. 2010 K4B1G1646G 1Gb G-die DDR3 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B1G1646G 96FBGA k4b1g1646g-bck0 K4B1G1646G-BCH9 K4B1G1646G K4B1G1646G-BCF8 K4B1G1646G-BCNB K4B1G1646G 1600 K4B1G1646GBCH9 K4B1G16 470 ohm resistance DDR3-2133

    Untitled

    Abstract: No abstract text available
    Text: Product Nomenclature Guide: ZEÊÛđ½ƒãçٛ Logic Devices Incorporated Product Type 9D = DDR 2 = DDR2 3 = DDR3 Words 32M = 32 MB 64M = 64 MB 128M = 128 MB 256M = 256 MB 512M = 512 MB 1G = 1024 MB Wordwidth 32 = x32 64 = x64 72 = x72 80 = x80 S = Single Channel


    Original     		PDF 200MHz 400Mbs 533Mbs 333MHz 667Mbs 400MHz 800Mbs 533MHz 1066Mbs 667MHz

    free circuit diagram of motherboard

    Abstract: DDR3 socket datasheet DDR3 DIMM SPD JEDEC ddr3 ram CM3X1G2133C9D DDR3 socket DDR3 DIMM SPD DDR3 jedec motherboard PCB diagram circuit diagram of motherboard
    Text: TW3X2G2133C9DF The Dominator Series TW3X2G2133C9DF is a 2048MByte kit of DDR3 SDRAM DIMMs built using Corsair’s latest high performance heat sink with Dual-path Heat Xchange DHX technology coupled with a Corsair Airflow Fan. This part delivers outstanding performance in the latest generation of dual-channel DDR3-based motherboards. It


    Original     		PDF TW3X2G2133C9DF TW3X2G2133C9DF 2048MByte 2133MHz hea-9-24 1333MHz CM3X1G2133C9D 2133MHz, free circuit diagram of motherboard DDR3 socket datasheet DDR3 DIMM SPD JEDEC ddr3 ram DDR3 socket DDR3 DIMM SPD DDR3 jedec motherboard PCB diagram circuit diagram of motherboard

    GDDR5

    Abstract: 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA
    Text: Jul.2010 Graphics Code Information Component K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory K 11. "─“ 2. DRAM : 4 12. Package - gDDR2 H : 84FBGA (Halogen Free & Lead Free) B : 84FBGA (Halogen Free & Lead Free & Flip Chip)


    Original     		PDF 84FBGA 100FBGA 96FBGA 136FBGA 170FBGA 8K/64ms 8K/32ms GDDR5 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA

    k4g10325fe-hc04

    Abstract: samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung
    Text: Jul. 2010 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF K4W2G1646C HC1A/11 HC7A/08 A/12/14 16Mx32 128Mx16 K4J52324KI 96ball 512Mb 136ball k4g10325fe-hc04 samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung

    Untitled

    Abstract: No abstract text available
    Text: THICK FILM CHIP RESISTORS HPL SERIES LOW RESISTANCE, LOW TCR, HIGH POWER • Features ‧Suitable for lead free soldering. ‧Compatible with flow and reflow soldering ■ Applications ‧Consumer Electronics ‧SMPS, M/B ‧Portable Device ‧Measurement instrument


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 4Gb DDR4 SDRAM 4Gb DDR4 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5AN4G4NMFR-xx H5AN4G8NMFR-xxC H5AN4G6NMFR-xxC * SK hynix reserves the right to change products or specifications without notice. Rev. 0.1 / Mar. 2013 1 Revision History Revision No. History


    Original     		PDF 96Ball