ndf02n60zg
Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF02N60Z,
NDD02N60Z
22-A114)
NDF02N60Z/D
ndf02n60zg
NDD02N60ZT4G
g1Dv
ndf02n60
NDF02N60Z
60ZG
|
TS20100CG
Abstract: ntsj20100ctg ntsj2010 ntsj20100 NTSB20100CT
Text: NTST20100CT, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.50 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low
|
Original
|
PDF
|
NTST20100CT,
NTSB20100CT-1G,
NTSJ20100CTG,
NTSB20100CTG
O-220AB
NTST20100CT/D
TS20100CG
ntsj20100ctg
ntsj2010
ntsj20100
NTSB20100CT
|
NDF05N50ZG
Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
|
Original
|
PDF
|
NDF05N50Z,
NDD05N50Z
JESD22-A114)
NDF05N50Z/D
NDF05N50ZG
NDF05N50
5n50zg
NDD05N50
50ZG
NDD05N50Z-1G
NDD05N50ZT4G
|
B10H150G
Abstract: No abstract text available
Text: MBRJ10H150CTG Product Preview SWITCHMODE Power Rectifier 150 V, 10 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 150 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total 5 A Per Diode Leg
|
Original
|
PDF
|
MBRJ10H150CTG
MBRJ10H150CT/D
B10H150G
|
B30L45G
Abstract: B30L45
Text: MBRJ30L45CTG Product Preview SWITCHMODE Power Rectifier 45 V, 30 A http://onsemi.com Features and Benefits • • • • • • • DUAL SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity
|
Original
|
PDF
|
MBRJ30L45CTG
MBRJ30L45CT/D
B30L45G
B30L45
|
B2045G
Abstract: B2045G AKA
Text: MBRJ2045CTG Product Preview SWITCHMODE Power Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg
|
Original
|
PDF
|
MBRJ2045CTG
MBRJ2045CT/D
B2045G
B2045G AKA
|
Untitled
Abstract: No abstract text available
Text: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D
|
Original
|
PDF
|
RX64M
R01DS0173EJ0100
120-MHz
32-bit
512-KB
1588-compliant
12-bit
PLQP0176KB-A
PLQP0144KA-A
PLQP0100KB-A
|
Untitled
Abstract: No abstract text available
Text: MBRJ30L60CTG Product Preview SWITCHMODE Power Rectifier 60 V, 30 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 30 A Total 15 A Per Diode Leg
|
Original
|
PDF
|
MBRJ30L60CTG
220FP)
MBRJ30L60CT/D
|
Untitled
Abstract: No abstract text available
Text: NDF08N50Z N-Channel Power MOSFET 500 V, 0.85 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS
|
Original
|
PDF
|
NDF08N50Z
NDF08N50Z/D
|
b30h60g
Abstract: No abstract text available
Text: MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG http://onsemi.com SWITCHMODE Power Rectifier 60 V, 30 A SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS 1 2, 4 Features and Benefits •
|
Original
|
PDF
|
MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G,
NRVBB30H60CTT4G,
MBRJ30H60CTG
MBRB30H60CT/D
b30h60g
|
B20H100G
Abstract: B20H100G aka B20H100 SCHOTTKY BARRIER RECTIFIER aka B20H100G
Text: MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, MBRJ20H100CTG, NRVBB20H100CTT4G SWITCHMODE Power Rectifier 100 V, 20 A http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS Features and Benefits • 1 Low Forward Voltage: 0.64 V @ 125C
|
Original
|
PDF
|
MBR20H100CTG,
MBRB20H100CTG,
MBRF20H100CTG,
MBRJ20H100CTG,
NRVBB20H100CTT4G
MBR20H100CT/D
B20H100G
B20H100G aka
B20H100
SCHOTTKY BARRIER RECTIFIER aka B20H100G
|
Untitled
Abstract: No abstract text available
Text: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary
|
Original
|
PDF
|
RX62T
R01DS0096EJ0100
100-MHz
32-bit
12-bit
10-bit
IEEE-754
|
Untitled
Abstract: No abstract text available
Text: NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF04N60Z,
NDD04N60Z
JESD22-A114)
NDF04N60Z/D
|
NDD03N80Z-1G
Abstract: No abstract text available
Text: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX
|
Original
|
PDF
|
NDD03N80Z,
NDF03N80Z
JESD22-A114)
NDD03N80Z/D
NDD03N80Z-1G
|
|
R01US0032EJ
Abstract: No abstract text available
Text: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
|
Original
|
PDF
|
RX63T
32-Bit
RX600
R01UH0238EJ0210
R01US0032EJ
|
Untitled
Abstract: No abstract text available
Text: NDF08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS
|
Original
|
PDF
|
NDF08N60Z
22-A114)
NDF08N60Z/D
|
Untitled
Abstract: No abstract text available
Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF02N60Z,
NDD02N60Z
22-A114)
NDF02N60Z/D
|
NDD03N60Z
Abstract: No abstract text available
Text: NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.6 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF03N60Z,
NDD03N60Z
22-A114)
NDF03N60Z/D
|
TP-128
Abstract: No abstract text available
Text: Features DATASHEET RX63T Group Renesas MCUs R01DS0087EJ0200 Rev.2.00 Mar 11, 2013 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, Two 12-bit ADCs three S/H circuits, double data registers, amplifier, comparator , one 10-bit ADC, simultaneous sampling on 7 channels using three ADCs, 100 MHz PWM (2 three-phase complementary channels + 4 single-phase
|
Original
|
PDF
|
RX63T
R01DS0087EJ0200
100-MHz
32-bit
12-bit
10-bit
IEEE-754
TP-128
|
Untitled
Abstract: No abstract text available
Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
|
Original
|
PDF
|
NDF02N60Z,
NDD02N60Z
NDF02N60Z/D
|
TS30100CG
Abstract: No abstract text available
Text: NTST30100CT, NTSB30100CT-1G, NTSJ30100CTG, NTSB30100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.455 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low
|
Original
|
PDF
|
NTST30100CT,
NTSB30100CT-1G,
NTSJ30100CTG,
NTSB30100CTG
O-220AB
NTST30100CT/D
TS30100CG
|
369AA
Abstract: No abstract text available
Text: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX
|
Original
|
PDF
|
NDD03N80Z,
NDF03N80Z
JESD22-A114)
NDD03N80Z/D
369AA
|
NDF06N60ZG
Abstract: 221D-03
Text: NDF06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A
|
Original
|
PDF
|
NDF06N60Z
JESD22-A114)
NDF06N60Z/D
NDF06N60ZG
221D-03
|
SCHOTTKY BARRIER RECTIFIER aka
Abstract: No abstract text available
Text: NTST40120CT, NTSJ40120CTG, NTSB40120CT-1G, NTSB40120CTG, NTSB40120CTT4G http://onsemi.com Very Low Forward Voltage Trench-based Schottky Rectifier VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 120 VOLTS Exceptionally Low VF = 0.43 V at IF = 5 A
|
Original
|
PDF
|
NTST40120CT,
NTSJ40120CTG,
NTSB40120CT-1G,
NTSB40120CTG,
NTSB40120CTT4G
NTST40120CT/D
SCHOTTKY BARRIER RECTIFIER aka
|