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    TDK Corporation C3225CH2J103J125AA

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    225CH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TMS320DM365 SPRS457E – MARCH 2009 – REVISED JUNE 2011 www.ti.com TMS320DM365 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM365 1 TMS320DM365 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media


    Original
    PDF TMS320DM365 SPRS457E TMS320DM365 300-MHz ARM926EJ-S 1/16x 16-Bit 8-/16-bit)

    mjcp

    Abstract: CCIR 656 GIO40
    Text: TMS320DM368 SPRS668C – APRIL 2010 – REVISED JUNE 2011 www.ti.com TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media


    Original
    PDF TMS320DM368 SPRS668C TMS320DM368 ARM926EJ-STM 32-Bit 16-Bit 16K-Byte 32K-Byte mjcp CCIR 656 GIO40

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


    Original
    PDF DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original
    PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    SA70

    Abstract: 18FFFFH
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V


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    PDF DS05-50204-2E MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 73-ball MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 SA70 18FFFFH

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION


    Original
    PDF IS71VPCF32XS04 73-ball CF32ES04-8570BI IS71VPCF32FS04-8570BI IS71VPCF32AS04-8585BI IS71VPCF32BS04-8585BI IS71VPCF32CS04-8585BI

    DL322

    Abstract: DL323 DL324
    Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features


    Original
    PDF Am41DL32x4G 16-Bit) 8-Bit/256 73-Ball FLB073--73-Ball DL322 DL323 DL324

    SA70

    Abstract: 22a17
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V


    Original
    PDF DS05-50207-4E MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 71-ball SA70 22a17

    MARKING SA70

    Abstract: MBM29DL324
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original
    PDF F0306 MARKING SA70 MBM29DL324

    CA 324G

    Abstract: DL322 DL323 DL324
    Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES


    Original
    PDF Am42DL32x4G 16-Bit) 73-Ball CA 324G DL322 DL323 DL324

    M1531

    Abstract: MC-222244AF9-B85X-BT3 MC-222244A-X
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-222244A-X MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 32M-BIT FLASH MEMORY AND 4M-BIT SRAM Description The MC-222244A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words


    Original
    PDF MC-222244A-X 32M-BIT MC-222244A-X 77-pin M1531 MC-222244AF9-B85X-BT3

    M29DW324D

    Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original
    PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63 M29DW324D M29DW324DB M29DW324DT TFBGA48 TFGBA48

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


    Original
    PDF DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V


    Original
    PDF DS05-50204-1E MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 73-ball MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 BGA-73P-M01) MB84VD2218XEC/ D-63303 F9909

    DL322

    Abstract: DL323 DL324 M41000002R
    Text: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original
    PDF Am41DL32x8G DL322 DL323 DL324 M41000002R

    DL322

    Abstract: DL323 DL324
    Text: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original
    PDF Am49DL32xBG DL322 DL323 DL324

    Be 555

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original
    PDF M29DW324DT M29DW324DB 16Mbit 16Mbit Be 555

    Untitled

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original
    PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63

    SA70

    Abstract: SA4664
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50303-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD22386EF/VD22387EF/VD22388EF-85 MB84VD22396EF/VD22397EF/VD22398EF-85 • FEATURES • Power Supply Voltage of 2.7 to 3.0 V for FCRAM


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    PDF DS05-50303-1E MB84VD22386EF/VD22387EF/VD22388EF-85 MB84VD22396EF/VD22397EF/VD22398EF-85 SA70 SA4664

    1N1170

    Abstract: BT565 Image Sensor Interface ISIF Registers DM368 hdvicp DM368 DM365 layout guidelines DDR dm368 isif application note 1080p cvbs
    Text: TMS320DM368 www.ti.com SPRS668A – APRIL 2010 TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media System-on-Chip (DMSoC)


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    PDF TMS320DM368 SPRS668A TMS320DM368 ARM926EJ-STM 32-Bit 16-Bit 16K-Byte 32K-Byte 1N1170 BT565 Image Sensor Interface ISIF Registers DM368 hdvicp DM368 DM365 layout guidelines DDR dm368 isif application note 1080p cvbs

    dm368

    Abstract: TMS320DM368 hdvicp DM368 DM365 layout guidelines DDR
    Text: TMS320DM368 www.ti.com SPRS668B – APRIL 2010 – REVISED NOVEMBER 2010 TMS320DM368 Digital Media System-on-Chip DMSoC Check for Samples: TMS320DM368 1 TMS320DM368 Digital Media System-on-Chip (DMSoC) 1.1 Features 12 • Highlights – High-Performance Digital Media


    Original
    PDF TMS320DM368 SPRS668B TMS320DM368 ARM926EJ-STM 32-Bit 16-Bit 16K-Byte 32K-Byte dm368 hdvicp DM368 DM365 layout guidelines DDR

    mbm29DL324BD

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M 4M x 8/2M × 16 BIT MBM29DL32XTD/BD Dual Operation -80/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)


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    PDF DS05-20873-4E MBM29DL32XTD/BD MBM29DL32XTD/MBM29DL32XBD mbm29DL324BD FPT-48P-M19 FPT-48P-M20

    FSA37

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F032204AL-X 32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The µPD29F032204AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory


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    PDF PD29F032204AL-X 32M-BIT 16-BIT PD29F032204AL-X FSA37

    2216H

    Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
    Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.


    OCR Scan
    PDF TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F