Untitled
Abstract: No abstract text available
Text: Color-Keyed Cast Copper Connectors Code Copper and Flex Copper Cables ® ® Cast Copper One Hole Lugs 600V to 35KV Applications— Heavy Duty Material—Cast Copper Finish—Electro-tin Plated Cat. No. Cable Size A 53104 53105 53106 8 6 4 17⁄16 17⁄16
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350MCM
500MCM
750MCM
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3SUP-HL-ER-6
Abstract: No abstract text available
Text: 3SUP-HL-ER-6 SERIES NOISE FILTERS Features Ɣ7KUHHSKDVHILOWHUGHOWDKLJKDWWHQXDWLRQ Ɣ 1FODVV$ % Ɣ$SSOLHVWR&(PDUNLQJ (1 DSSURYDOE\ TÜV . Applications Ɣ,QYHUWHUSRZHUVXSSOLHV8366HUYRRSHUDWHG PDFKLQHU\ 6DIHW\6WDQGDUG
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E78644
R50056176
UL1283
EN60939
3SUP-HL10-ER-6
3SUP-HL15-ER-6
3SUP-HL30-ER-6
3SUP-HL50-ER-6
3SUP-HL75-ER-6
3SUP-HL100-ER-6
3SUP-HL-ER-6
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Untitled
Abstract: No abstract text available
Text: 3SUP-HL-ER-6 SERIES ノイズフィルタ NOISE FILTER 特 長 ●三相三線式高減衰特性 ●EN55011、 クラスA、 B対策用 ●CEマーキング対応 （TÜVにて、海外安全規格EN60939 を取得） UL TÜV 安全規格 :UL-1283 :EN60939
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EN55011ã
EN60939
UL-1283
E78644
R50056176
3SUP-HL10-ER-6
3SUP-HL15-ER-6
3SUP-HL30-ER-6
3SUP-HL50-ER-6
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capacitor 226 35K
Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
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MRF21120
MRF21120S
capacitor 226 35K
105 35K capacitor
226 35K capacitor
capacitor 104 Z30
electrolytic capacitor 226 35k
capacitor 104 35k
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Untitled
Abstract: No abstract text available
Text: 3SUP-HL-ER-6 SERIES ノイズフィルタ NOISE FILTER 特 長 ●三相三線式高減衰特性 ●EN55011、 クラスA、B対策用 ●CEマーキング対応 （TÜVにて、 海外安全規格EN60939 を取得） UL TÜV 安全規格 :UL-1283 :EN60939
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PDF
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EN55011ã
EN60939
UL-1283
E78644
R50056176
3SUP-HL10-ER-6
3SUP-HL15-ER-6
3SUP-HL30-ER-6
3SUP-HL50-ER-6
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226 35K
Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
226 35K
226 35K capacitor
capacitor 226 35K
electrolytic capacitor 226 35k
226 35K 649
226 35K 750
gps-500
105 35K capacitor
R 226 35k
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226 35K capacitor
Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120R6
226 35K capacitor
capacitor 226 35K
C40 Sprague
105 35K capacitor
R 226 35k
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226 35K capacitor
Abstract: capacitor 226 35K R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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2170fficiency,
MRF21120
MRF21120S
226 35K capacitor
capacitor 226 35K
R 226 35k
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capacitor 226 35K
Abstract: R 226 35k 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120/D
capacitor 226 35K
R 226 35k
226 35K capacitor
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capacitor 226 35K
Abstract: 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
capacitor 226 35K
226 35K capacitor
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z40 mosfet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120R6
MRF21120/D
z40 mosfet
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capacitor 106 35K
Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
capacitor 106 35K
capacitor 226 35K 022 electrolytic
226 35K
capacitor 226 35K
capacitor 106 35K tantalum
105 35K capacitor
capacitor 106 35K electrolytic
226 35K capacitor
106 35K 045
226 35K capacitor datasheet
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226 35K capacitor
Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
226 35K capacitor
MRF21120
z40 mosfet
226 35K
capacitor 226 35K
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capacitor 106 35K
Abstract: 226 35K 106 35K capacitor 106 35K tantalum capacitor 106 35K electrolytic 105 35K capacitor MRF21120R6 capacitor 226 35K
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET
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MRF21120/D
MRF21120R6
capacitor 106 35K
226 35K
106 35K
capacitor 106 35K tantalum
capacitor 106 35K electrolytic
105 35K capacitor
MRF21120R6
capacitor 226 35K
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226 35k 051
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120S
MRF21120/D
226 35k 051
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226 35K
Abstract: capacitor 226 35K capacitor 226 35K 022 electrolytic 105 35K capacitor 226 35K capacitor datasheet gps m 89 pin configuration 105 35K capacitor datasheet 226 35K capacitor marking us capacitor pf l1 MRF21120
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K
capacitor 226 35K
capacitor 226 35K 022 electrolytic
105 35K capacitor
226 35K capacitor datasheet
gps m 89 pin configuration
105 35K capacitor datasheet
226 35K capacitor
marking us capacitor pf l1
MRF21120
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A4514
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
A4514
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226 35K capacitor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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Original
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MRF21120
MRF21120R6
226 35K capacitor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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PDF
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MRF21120/D
MRF21120
MRF21120S
MRF21120
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226 35K
Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21120
MRF21120R6
226 35K
105 35K capacitor
capacitor 226 35K 022 electrolytic
MRF21120
MRF21120R6
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226 35K capacitor
Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
226 35K capacitor
226 35K
R 226 35k 029
capacitor 226 35K
capacitor 105 35K 102
capacitor 104 35k
R 226 35k 029 R
variable capacitor
105 35K capacitor
fm variable capacitor
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Untitled
Abstract: No abstract text available
Text: 2: 5: SYS06: BASE1 50: 95: 98: JOB: IC931Z-P00034-21 100: Name: D-SUBMINIATURE DATE: MAR 4 1998 Time: 1:57:52 PM Operator: BC COLOR: BLACK TCP: 666 Typedriver Name: TS name csm no.: 100 D Subminiature Zoom: 100 ZD* Solder Cup Termination Stamped with Tin Shells
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ZDA15P
ZDB25P
ZDC37P
ZDD50P
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solder cup awg 16
Abstract: bc 494 ZDD50P ZDA15S 226 35K 224
Text: 2: 5: SYS06: BASE1 50: 95: JOB: IC931Z-P00035-22 98: 100: Name: D-SUBMINIATURE DATE: MAR 4 1998 Time: 1:57:56 PM Operator: BC COLOR: BLACK TCP: 666 Typedriver Name: TS name csm no.: 100 D Subminiature Zoom: 100 ZD* Solder Cup Termination Stamped with Tin Shells
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SYS06:
IC931Z---P00035-22
ZDA15S
ZDB25S
ZDC37S
ZDD50S
solder cup awg 16
bc 494
ZDD50P
ZDA15S
226 35K 224
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Untitled
Abstract: No abstract text available
Text: 3SUP-HK-ER-6 SERIES ノイズフィルタ NOISE FILTER 特 長 ●三相三線式 ●EN55011 クラスA、 B対策用 ●CEマーキング対応 （TÜVにて、海外安全規格EN60939 を取得） 安全規格 :EN60939 TÜV File No. R50056176 用 途
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EN55011ã
EN60939
R50056176
3SUP-HK250-ER-6
3SUP-HK75-ER-6
250mA
000Vac
500Vac
50/60Hz
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