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    22B102 Price and Stock

    ETI Systems MW22B-10-20K

    POT 20K 10-TURN 2W WIRE LINEAR
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    DigiKey MW22B-10-20K Bulk 125 1
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    Mouser Electronics MW22B-10-20K 83
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    Newark MW22B-10-20K Bulk 19 1
    • 1 $39.74
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    RS MW22B-10-20K Bulk 21 1
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    ETI Systems MW22B-10-2K

    POT 2K 10-TURN 2W WIRE LINEAR
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    DigiKey MW22B-10-2K Bulk 72 1
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    Mouser Electronics MW22B-10-2K 50
    • 1 $38.4
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    Newark MW22B-10-2K Bulk 30 1
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    RS MW22B-10-2K Bulk 54 1
    • 1 $38.68
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    KEMET Corporation 30HV22B102K

    CAP CER 1000PF 3KV X7R RADIAL
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    Azoteq IQS7222B102QNR

    IC SENSOR
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    DigiKey IQS7222B102QNR Bulk 2,000
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    Mouser Electronics IQS7222B102QNR 4,076
    • 1 $1.6
    • 10 $1.2
    • 100 $0.869
    • 1000 $0.672
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    KEMET Corporation 30HV22B102KCMG225

    - Bulk (Alt: 30HV22B102KCMG225)
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    Avnet Americas 30HV22B102KCMG225 Bulk 18 Weeks 1
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    22B102 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product B350A, B360A Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficifieency • High surge capability


    Original     		B350A, B360A J-STD-020, 2002/95/EC 2002/96/EC DO-214AC DO-21trademarks 2011/65/EU 2002/95/EC. PDF

    BY252P

    Abstract: No abstract text available
    Text: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in


    Original     		BY251P BY255P 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2011/65/EU 2002/95/EC. BY252P PDF

    Untitled

    Abstract: No abstract text available
    Text: P300A thru P300M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in


    Original     		P300A P300M 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2011/65/EU 2002/95/EC. PDF

    Untitled

    Abstract: No abstract text available
    Text: SA5.0A thru SA170CA www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate duty


    Original     		SA170CA DO-204AC DO-15) 22-B106 AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    MUR420-E3

    Abstract: No abstract text available
    Text: MUR420 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability


    Original     		MUR420 DO-201AD 22-B106 2002/95/EC 2002/96/EC DO-201AD 2011/65/EU 2002/95/EC. 2011/65/EU. MUR420-E3 PDF

    VSB3200

    Abstract: vsb320
    Text: New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106


    Original     		VSB3200 22-B106 2002/95/EC 2002/96/EC DO-201AD DO-201AD 2011/65/EU 2002/95/EC. 2011/65/EU. VSB3200 vsb320 PDF

    Untitled

    Abstract: No abstract text available
    Text: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time


    Original     		BYG23M J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: SSC53L, SSC54 www.vishay.com Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original     		SSC53L, SSC54 J-STD-020, DO-214AB AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    marking code VE DO-214AC

    Abstract: vishay smaj5.0
    Text: SMAJ5.0A thru SMAJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


    Original     		SMAJ188CA J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. marking code VE DO-214AC vishay smaj5.0 PDF

    Untitled

    Abstract: No abstract text available
    Text: RS2A thru RS2K www.vishay.com Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Fast switching for high efficiency • High forward surge capability


    Original     		J-STD-020, DO-214AA AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    TO-277

    Abstract: ss12p3
    Text: New Product SS12P2L, SS12P3L Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection


    Original     		SS12P2L, SS12P3L AEC-Q101 2002/95/EC 2002/96/EC J-STD-020, O-277A 2011/65/EU 2002/95/EC. TO-277 ss12p3 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SS5P5, SS5P6 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses


    Original     		AEC-Q101 2002/95/EC 2002/96/EC J-STD-020, O-277A 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    PB3510

    Abstract: PB35
    Text: PB3506 thru PB3510 www.vishay.com Vishay General Semiconductor Enhanced isoCink+TM Bridge Rectifiers FEATURES • UL recognition file number E312394 QQQX2 UL 1557 (see *) isoCink+ • Enhanced high-current density single in-line package ~ ~ + - Case Style PB


    Original     		PB3506 PB3510 E312394 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PB3510 PB35 PDF

    TPSMA*A

    Abstract: No abstract text available
    Text: TPSMA6.8 thru TPSMA43A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology


    Original     		TPSMA43A DO-214AC J-STD-020, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TPSMA*A PDF

    Untitled

    Abstract: No abstract text available
    Text: TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor TRANSZorb Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only


    Original     		TGL41-6 TGL41-200A J-STD-020, DO-213AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: BYG21K, BYG21M www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time


    Original     		BYG21K, BYG21M J-STD-020, AEC-Q101 DO-214AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    1N54

    Abstract: 1N5402 DIODES
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in


    Original     		1N5400 1N5408 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2011/65/EU 2002/95/EC. 1N54 1N5402 DIODES PDF

    RGP02-15

    Abstract: ignition module
    Text: RGP02-12E thru RGP02-20E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency


    Original     		RGP02-12E RGP02-20E MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 30trademarks RGP02-15 ignition module PDF

    Untitled

    Abstract: No abstract text available
    Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low leakage current • High forward surge capability


    Original     		GP02-20 GP02-40 MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 2011/65/EU PDF

    Untitled

    Abstract: No abstract text available
    Text: P6KA6.8 thru P6KA43A Vishay General Semiconductor PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high


    Original     		P6KA43A DO-204AC DO-15) 22-B106 AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product S1PB thru S1PM Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction eSMP Series


    Original     		AEC-Q101 J-STD-020, DO-220AA 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    semiconductor band color code

    Abstract: No abstract text available
    Text: RGL34A thru RGL34K Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES SUPERECTIFIER • Superectifier structure for high reliability condition • Ideal for automated placement • Fast switching for high efficiency


    Original     		RGL34A RGL34K MIL-S-19500 J-STD-020, DO-213AA AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. semiconductor band color code PDF

    1N4948G

    Abstract: No abstract text available
    Text: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Fast switching for high efficiency


    Original     		1N4942GP 1N4948GP MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL DO-41) 2011/65/EU 1N4948G PDF