22N60P
Abstract: No abstract text available
Text: IXTQ 22N60P IXTT 22N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 V = 22 A ≤ 330 mΩ Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous
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22N60P
22N60P
O-268
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22n60p
Abstract: 22n60 IXTQ22N60P PLUS220SMD
Text: PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS on = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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22N60P
22N60PS
22n60p
22n60
IXTQ22N60P
PLUS220SMD
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IXFV22N60PS
Abstract: 22N60P PLUS220SMD IXFV22N60P FS15-12
Text: PolarHVTM HiPerFET Power MOSFETs IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS on ≤ 350 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C
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22N60P
22N60PS
O-247
22N60P
IXFV22N60P
02-17-06-B
IXFV22N60PS
PLUS220SMD
IXFV22N60P
FS15-12
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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22N60
22N60
O-247
22N60L-T47-T
22N60G-T47-T
QW-R502-216
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 22A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
O-247
22N60L-T47-T
22N60G-T47-T
QW-R502-216
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22N60P
Abstract: IXTQ22N60P siemens 30 PLUS220SMD
Text: IXTQ 22N60P IXTV 22N60P IXTV 22N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 22 A ≤ 330 mΩ Ω RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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22N60P
22N60PS
PLUS220
PLUS220SMD
22N60P
IXTQ22N60P
siemens 30
PLUS220SMD
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22N60P
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFETs VDSS ID25 = = RDS on ≤ ≤ trr IXFH 22N60P IXFT 22N60P N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated 600 V 22 A Ω 330 mΩ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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22N60P
22N60P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Preliminary Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
O-247
22N60L
22N60G
22N60-T47-T
22N60L-T47-T
QW-R502-216
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22N60
Abstract: TO-247
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 22A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
O-247
22N60L-T47-T
22N60G-T47-T
QW-R502-216
TO-247
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22N60
Abstract: MOSFET dynamic parameters power mosfet 600v
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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22N60
22N60
O-247
22N60L
22N60G
22N60-T47-T
22N60L-T47-T
22N60G-T47-t
QW-R502-216
MOSFET dynamic parameters
power mosfet 600v
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 022A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
22N60L-T47-T
22N60G-T47-T
22N60L-T3P-T
22N60G-T3P-T
22N60L-at
QW-R502-216
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22N60
Abstract: SMPS MOSFET 216d
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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22N60
22N60
O-247
22N60L-T47-T
22N60G-T47-T
QW-R502-216
SMPS MOSFET
216d
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFETs IXFH 22N60P IXFV 22N60P IXFV 22N60PS VDSS = 600 V ID25 = 22 A RDS on ≤ 350 m Ω ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C
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22N60P
22N60PS
O-247
22N60P
IXFV22N60P
02-17-06-B
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings
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ISOPLUS220TM
22N60P
02-17-06-B
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22N60
Abstract: 22N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Power MOSFET 22A, 600V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
O-247
O-230
22N60L-Tther
QW-R502-216
22N60L
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22N60P
Abstract: 22n60 nt314 C4522 IXFC22N60P
Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings
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ISOPLUS220TM
22N60P
02-17-06-B
22N60P
22n60
nt314
C4522
IXFC22N60P
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Untitled
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS on = 600 V = 22 A ≤ 350 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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22N60P
22N60PS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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24N50
24N50
QW-R502-533
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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STW20N60
Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal
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O-220,
ISOPLUS220TM,
O-247,
ISOPLUS247TM,
O-264,
ISOPLUS264TM.
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
STW20N60
2n60p
IXFB100N50
IXFB100N50P
STW20N60FD
IXFB100N50P TO-264
ixys ixfn100n50p
IXFN48n60p
IXFH30N60P
ixfn100n50p
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