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    230N06 Search Results

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    230N06 Price and Stock

    Taiwan Semiconductor TSM230N06CP-ROG

    MOSFET N-CHANNEL 60V 34A TO252
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    DigiKey TSM230N06CP-ROG Digi-Reel 32,552 1
    • 1 $1.18
    • 10 $0.74
    • 100 $1.18
    • 1000 $0.34255
    • 10000 $0.34255
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    TSM230N06CP-ROG Cut Tape 32,552 1
    • 1 $1.18
    • 10 $0.74
    • 100 $1.18
    • 1000 $0.34255
    • 10000 $0.34255
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    TSM230N06CP-ROG Reel 30,000 2,500
    • 1 -
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    • 10000 $0.27965
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    Taiwan Semiconductor TSM230N06PQ56-RLG

    MOSFET N-CH 60V 44A 8PDFN
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    DigiKey TSM230N06PQ56-RLG Digi-Reel 5,680 1
    • 1 $1.31
    • 10 $0.879
    • 100 $1.31
    • 1000 $0.45634
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    TSM230N06PQ56-RLG Cut Tape 5,680 1
    • 1 $1.31
    • 10 $0.879
    • 100 $1.31
    • 1000 $0.45634
    • 10000 $0.45634
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    TSM230N06PQ56-RLG Reel 5,000 2,500
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    • 10000 $0.39875
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    Taiwan Semiconductor TSM230N06CP

    60V, 50A, SINGLE N-CHANNEL POWER
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    DigiKey TSM230N06CP Reel 5,000
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    Rochester Electronics LLC IPP230N06L3G

    N-CHANNEL POWER MOSFET
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    DigiKey IPP230N06L3G Bulk 693
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    • 1000 $0.43
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    Infineon Technologies AG IPP230N06L3-G

    MOSFET N-CH 60V 30A TO220-3
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    DigiKey IPP230N06L3-G Tube
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    230N06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    230n06l

    Abstract: 230n06 IPB230N06L3 G IPP230N06L3 IPP230N06L3 G IPB230N06L3 JESD22 PG-TO220-3 ipp230n06 D443
    Text: 230N06L3 G 230N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 23 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)


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    IPB230N06L3 IPP230N06L3 PG-TO263-3 PG-TO220-3 230N06L 230n06l 230n06 IPB230N06L3 G IPP230N06L3 G JESD22 PG-TO220-3 ipp230n06 D443 PDF

    230n06l

    Abstract: No abstract text available
    Text: 230N06L3 G 230N06L3 G Type OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) VDS 60 V RDS(on),max


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    IPB230N06L3 IPP230N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 230N06L 230n06l PDF

    230N06L

    Abstract: smd diode g5
    Text: 230N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original
    IPD230N06L PG-TO252-3 230N06L PG-TO252-3: 230N06L smd diode g5 PDF

    230N06L

    Abstract: 230n06
    Text: 230N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original
    IPD230N06L PG-TO252-3 230N06L 230N06L 230n06 PDF

    230N06N

    Abstract: ipd230n06n
    Text: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original
    IPD230N06N PG-TO252-3 230N06N 30gerous 230N06N PDF

    230n06l

    Abstract: No abstract text available
    Text: 230N06L3 G 230N06L3 G Type OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max 23 mW ID 30 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPB230N06L3 IPP230N06L3 IEC61249-2-21 PG-TO263-3 230N06L PG-TO220-3 230n06l PDF

    230N06L

    Abstract: IPP230N06L3 G IPP230N06L3 230n06 IEC61249-2-21 IPB230N06L3 JESD22 PG-TO220-3 J-STD-20
    Text: Type 230N06L3 G 230N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 23 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPB230N06L3 IPP230N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 230N06L 230N06L IPP230N06L3 G 230n06 IEC61249-2-21 JESD22 PG-TO220-3 J-STD-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original
    IPD230N06N PG-TO252-3 230N06N PG-TO252-3: PDF

    230N06N

    Abstract: 230n06
    Text: 230N06N G OptiMOS Power-Transistor Product Summary Features • For dc/dc converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant


    Original
    IPD230N06N PG-TO252-3 230N06N PG-TO252-3: 230N06N 230n06 PDF