Untitled
Abstract: No abstract text available
Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : Tf =120MHz E C 1 6 2 5 3 4 C B C SuperSOT TM C -6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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FMBS2383
120MHz
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QS 100 NPN Transistor
Abstract: No abstract text available
Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : fT=120MHz E C 1 6 2 5 3 4 C B C C SuperSOTTM-6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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FMBS2383
120MHz
QS 100 NPN Transistor
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PDF
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MAX9320B
Abstract: MAX9320BESA MAX9320BEUA MC10EP11D
Text: 19-2383; Rev 0; 4/02 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current
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Original
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MC10EP11D
208ps
300mV
MAX9320BESA
MAX9320BEUA*
MAX9320B
MAX9320B
MAX9320BESA
MAX9320BEUA
MC10EP11D
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-2383; Rev 1; 11/03 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current
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Original
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MC10EP11D
208ps
300mV
MAX9320B
MAX9320BEUA
MAX9320BESA
MAX9320B
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PDF
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MAX9320B
Abstract: MAX9320BESA MAX9320BEUA MC10EP11D
Text: 19-2383; Rev 1; 11/03 1:2 Differential PECL/ECL/LVPECL/LVECL Clock and Data Driver Features ♦ Improved Second Source of the MC10EP11D ♦ +3.0V to +5.5V Differential PECL/LVPECL Operation ♦ -3.0V to -5.5V ECL/LVECL Operation ♦ Low 22mA Supply Current
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Original
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MC10EP11D
208ps
300mV
MAX9320BEUA
MAX9320BESA
MAX9320B
MAX9320B
MAX9320BESA
MAX9320BEUA
MC10EP11D
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PDF
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2SC2383
Abstract: 2SC2383 equivalent
Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 2383 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C080BJ-01 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2
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Original
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100mm
C080BJ-01
2SC2383
O-92L
900mW
10mAIB
150VIE
2SC2383
2SC2383 equivalent
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PDF
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tv vertical ic circuit list
Abstract: transistor marking code y3 transistor MARKING CODE tv 2383 transistor
Text: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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Original
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FJC2383
FJC2383
OT-89
OT-89-3
FJC2383OTF
FJC2383YTF
tv vertical ic circuit list
transistor marking code y3
transistor MARKING CODE tv
2383 transistor
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PDF
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MAX1818EUT
Abstract: TOP CODE ABZH Dual N-Channel SOT-6 MOSFET max1818eut25 top mark ABZH sot23 abzk ABZH
Text: 19-1860; Rev 2; 6/08 500mA Low-Dropout Linear Regulator in SOT23 Features ♦ Guaranteed 500mA Output Current ♦ Low 120mV Dropout at 500mA ♦ ±1% Output Voltage Accuracy Preset at 1.5V, 1.8V, 2.0V, 2.5V, 3.3V, 5V Adjustable from 1.25V to 5.0V ♦ Power OK Output
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Original
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500mA
MAX1818
120mV
mvp/id/2383/t/or/pt/MAX1818
17-May-2012
MAX1818EUT
TOP CODE ABZH
Dual N-Channel SOT-6 MOSFET
max1818eut25
top mark ABZH
sot23 abzk
ABZH
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PDF
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Untitled
Abstract: No abstract text available
Text: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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Original
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FJC2383
OT-89
FJC2383
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PDF
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FJC2383
Abstract: No abstract text available
Text: FJC2383 NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection Output Marking 2 3 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted
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Original
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FJC2383
OT-89
FJC2383
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PDF
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kta1013
Abstract: TIC 160 VCEO160V
Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KTC 2383 U nit in m m ) . • Color T V jV ERT. D e f le c tio n O utput. ■ Color T V C l a s s B S o u n d O utput. ( FEATURES ) • High V o lta g e ! V ceo^ ^ O V • L a r g e C o n tin u o u s C o l l e c t o r C u r r e n t C a pability.
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OCR Scan
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VCEO-160V
KTA1013
Ta-25Â
500mA,
200mA
92MOD
kta1013
TIC 160
VCEO160V
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PDF
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"High Speed Switch"
Abstract: TE 2383
Text: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High
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OCR Scan
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TCs25
NT1300
T0220
150ns,
350ns,
110ns,
"High Speed Switch"
TE 2383
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PDF
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“RCA H 541â€
Abstract: No abstract text available
Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE IN TER SIL C D 54/74FC T540, CD54/74FCT540AT C D 54/74FC T541, CD54/74FCT541 AT July 1990 Octal Buffers/Line Drivers, 3-S tate CD54/74FCT540, CD54/74FCT540AT - Inverting CD54/74FCT541, CD54/74FCT541 AT - Non-Inverting
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OCR Scan
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54/74FC
CD54/74FCT540AT
CD54/74FCT541
CD54/74FCT540,
CD54/74FCT540AT
CD54/74FCT541,
FCT540,
FCT541)
“RCA H 541â€
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PDF
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74fct541a
Abstract: 74fct541 T541 CD54FCT540 RCA H 541 “RCA H 541â€
Text: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTER SIL C D 54/74FC T540, C D 54/74FCT540AT C D 54/74FC T541, CD54/74FCT541 AT July 1990 Octal Buffers/Line Drivers, 3-S tate CD54/74FCT540, CD54/74FCT540AT - Inverting CD54/74FCT541, CD54/74FCT541 AT - Non-Inverting
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OCR Scan
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54/74FC
54/74FCT540AT
CD54/74FCT541
CD54/74FCT540,
CD54/74FCT540AT
CD54/74FCT541,
FCT540,
FCT541)
74fct541a
74fct541
T541
CD54FCT540
RCA H 541
“RCA H 541â€
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PDF
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NTE2382
Abstract: No abstract text available
Text: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL
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OCR Scan
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T0220
150ns,
350ns,
110ns,
160ns
NTE2382
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PDF
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2sk type
Abstract: 2SK+series
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) 1Y h I ton (max.)
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OCR Scan
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O-220E
O-220F
2SK1331
bT32fl52
2sk type
2SK+series
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PDF
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bd799
Abstract: bd800
Text: Power Transistors File Number 1242 HARR IS S E M I C O N D S E CT OR BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 27E ]> • 43GS271 Epitaxial-Base, Silicon N -P-N and P-N-P VERSAWATT Transistors QGeamT-? ■ HA S T - 3 3 ~ \ TERMINAL DESIGNATIONS
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OCR Scan
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BD795,
BD796,
BD797,
BD798,
BD799,
BD800,
BD801,
BD802
43GS271
O-22QAB
bd799
bd800
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PDF
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motorola 2383 pnp
Abstract: MMBT6517LT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor M M BT6517LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 350 Vdc C ollector-B ase Voltage v CBO 350 Vdc Emitter- B ase Voltage
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OCR Scan
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BT6517LT1
O--236AB)
1/2MSD7000
MMBT6517LT1
motorola 2383 pnp
MMBT6517LT
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PDF
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2SC2398
Abstract: 2SC2375 2SC1815 2SC2431 2SC2378 2SA1013 2SC2362 2SC2363 2SC2383 2SC2384
Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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OCR Scan
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2SC2412
150mV
2SC2389
2SC2390
2SC2430
2SC2431
2SC2432
2SC2398
2SC2375
2SC1815
2SC2431
2SC2378
2SA1013
2SC2362
2SC2363
2SC2383
2SC2384
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PDF
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vno300m
Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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OCR Scan
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100kQ
500MIh,
200MHz)
2SA103I5
vno300m
2SC2382
epa 2391
2SA103
THB 6 2411
175mhz 12.5v 40w
te 2395
138B
138D
2SA1028
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PDF
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UFNF123
Abstract: UFNF120
Text: U NITRO DE CORP 9347963 ^2 U N ITRO DE DE CORP 0D1DÖS7 92D 10827 POWER MOSFET TRANSISTORS ufnfi2o 100 Volt, 0.30 Ohm N-Channel UFNF122 UFNF123 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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OCR Scan
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UFNF122
UFNF123
UFNF121
UFNF120
UFNF123
UFNF120
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PDF
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MRF557
Abstract: No abstract text available
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W
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OCR Scan
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MRF557
MRF557
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PDF
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ufnf122
Abstract: ufnf120 UFNF123
Text: POWER MOSFET TRANSISTORS y 100 UFNF122 UFNF123 Volt, 0 .3 0 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode power MOSFET design u tilizes the m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.
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OCR Scan
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UFNF122
UFNF123
UFNF120
UFNF121
UFNF123
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PDF
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Untitled
Abstract: No abstract text available
Text: MAXIM UM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V o lta g e v CEO -3 0 0 Vdc C o lle c to r-B a s e V o lta g e v CBO -3 0 0 V dc E m iite r-B a s e V o lta g e Vebo -5 .0 V dc C o lle c to r C u rre n t — C o n tin u o u s 'C -5 0 0
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OCR Scan
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MPSW92
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PDF
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