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    Azoteq IQS7223C001CSR

    4 CHANNEL MUTUAL/SELF-CAPACITIVE
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    DigiKey IQS7223C001CSR Digi-Reel 14,855 1
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    CW Industries GRS-4023C-0005

    SWITCH ROCKER DPDT 13A 125V
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    Azoteq IQS7223C001QNR

    4 CHANNEL MUTUAL/SELF-CAPACITIVE
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    DigiKey IQS7223C001QNR Cut Tape 2,000 1
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    Mouser Electronics IQS7223C001QNR 3,842
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    CW Industries GRS-4023C-0017

    SWITCH ROCKER DPDT 13A 125V
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    DigiKey GRS-4023C-0017 Bulk 1,555 1
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    Mouser Electronics GRS-4023C-0017 485
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    Bulgin PXEB5423C002

    CBL ASSY 4CH FMBH-SC OM3 2M
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    23C00 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UM0560

    Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
    Text: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard


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    UM0560 UM0560 STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23 PDF

    ST3215

    Abstract: No abstract text available
    Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    RL78/G13 16-Bit R01UH0146EJ0310 ST3215 PDF

    SS 1091 asn

    Abstract: TDA 1045 picture in picture chip SAE-J1850
    Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD PRELIMINARY DATA • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)


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    ST92F120 8/16-BIT J1850 SS 1091 asn TDA 1045 picture in picture chip SAE-J1850 PDF

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: nb 358 d
    Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)


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    ST92F124/ST92F150/ST92F250 8/16-BIT J1850 TQFP64 14x14 PQFP100 14x20 TQFP100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR nb 358 d PDF

    DAP 015

    Abstract: No abstract text available
    Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD DATASHEET • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 2 to 4 Kbytes RAM, 1K byte emulated EEPROM E3PROMTM – 224 general purpose registers (register file)


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    ST92F120 8/16-BIT J1850 DAP 015 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, PDF

    top side a4 marking

    Abstract: 23C00 100FE 1D803 24C01 MARKING 1C202 1C801 11801 23C01 1D002
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    M306V5ME-XXXSP, M306V5EESP top side a4 marking 23C00 100FE 1D803 24C01 MARKING 1C202 1C801 11801 23C01 1D002 PDF

    BCM 4709

    Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
    Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、


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    78K0R/Fx3 78K0R/FB3: PD78F1804 78F1805 78F1806 78F1807 78F1804 BCM 4709 78F1830 78F1834 78f1835 78f1845 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841 PDF

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G PDF

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300 PDF

    UM0560

    Abstract: stm8s family 177FFh STM8S105x6 EEPROM EXAMPLE STM8s
    Text: UM0560 User manual STM8S bootloader user manual 1 Introduction This user manual contains the bootloader specifications for STM8S devices which contain a bootloader embedded in the system memory of the device the ROM memory . Through this firmware, the device memory can be erased and programmed using one of the standard


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    UM0560 UM0560 stm8s family 177FFh STM8S105x6 EEPROM EXAMPLE STM8s PDF

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N PDF

    feer spi flash programmer schematic

    Abstract: IFR 630 MF J1850 PQFP100 ST92F120 ST92F120R1T ST92F120R6T ST92F120R9T ST92F120V1Q ST92F120V6Q
    Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ TQFP64 PQFP100 ■ ■ ■ ■ Full I2C multiple Master/Slave Interface supporting ACCESS BUS Rich Instruction Set with 14 Addressing Modes


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    ST92F120 8/16-BIT J1850 TQFP64 PQFP100 ST92F120R6T feer spi flash programmer schematic IFR 630 MF PQFP100 ST92F120 ST92F120R1T ST92F120R6T ST92F120R9T ST92F120V1Q ST92F120V6Q PDF

    SS 1091 asn

    Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR f2f decoder ic J1850 PQFP100 ST92F120 ST92F120JV1 ST92F120JV9 ST92F120V1 ST92F120V9
    Text: ST92F120 8/16-BIT FLASH MCU FAMILY WITH RAM, EEPROM AND J1850 BLPD PRELIMINARY DATA • ■ ■ ■ Memories – Internal Memory: up to 128 Kbytes Single Voltage FLASH, 1.5 to 4 Kbytes RAM, 512 to 1K bytes emulated EEPROM E3PROMTM – 224 general purpose registers (register file)


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    ST92F120 8/16-BIT J1850 SS 1091 asn MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR f2f decoder ic PQFP100 ST92F120 ST92F120JV1 ST92F120JV9 ST92F120V1 ST92F120V9 PDF

    pdl128g70

    Abstract: SA90 1D400
    Text: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4


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    Am29PDL128G 16-Bit/4 32-Bit) 128Mbit 16-bit) Am29F Am29LV LAB080 pdl128g70 SA90 1D400 PDF

    TEC201

    Abstract: CORE F5A MARKING D55 mcl psc-2 dap 6 Marking R192 DAP 015 ST9 Compiler
    Text: ST92124xxx-Auto/ST92150xxxxx-Auto/ ST92250xxxx-Auto 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256


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    ST92124xxx-Auto/ST92150xxxxx-Auto/ ST92250xxxx-Auto 8/16-bit J1850 TEC201 CORE F5A MARKING D55 mcl psc-2 dap 6 Marking R192 DAP 015 ST9 Compiler PDF

    10D7E

    Abstract: si 13001 closed caption tr 13001 CS 13001 13001 datasheet transistor te 13001 datasheet for ME 11282 13001 switching circuit 13001 TO 92
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    M306V0ME-XXXFP, M306V0EEFP 10D7E si 13001 closed caption tr 13001 CS 13001 13001 datasheet transistor te 13001 datasheet for ME 11282 13001 switching circuit 13001 TO 92 PDF

    SH56

    Abstract: 13001 s 25C00
    Text: MITSUBISHI MICROCOMPUTERS M306V2ME-XXXFP M306V2EEFP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V2ME-XXXFP and M306V2EEFP are single-chip microcomputers using the high-performance


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    16-BIT M306V2ME-XXXFP M306V2EEFP M306V2EEFP M16C/60 100-pin M306Vorized M306V2ME-XXXFP, SH56 13001 s 25C00 PDF

    23C01

    Abstract: 23c00
    Text: T T C ICON' INTEGRATE] ETE D 0 5 5 3 0 0 ^ DDDDDia 0 lT - 4 -ü>-/3 -ç>'7. MICROCOMPUTER & PERIPHERAL 1C SIS 23C00 CGA Character Generator FEATURES PIN ASSIGNMENT •Access time 250ns •Low standby current •Low power dissipation •Single + 5V power supply


    OCR Scan
    23C00 250ns 23C01 23C01 23c00 PDF

    23C07

    Abstract: 23c00 23C01 2764 EPROM sis23c01 SIS23C00 zca4 IC 2764 M/tz+595a
    Text: 'SILICON INTEGRATE» ETE D 025300^ ODOOÖ'm 4 M IC R O C O M P U T E R & P E R IP H E R A L ! Cs S IS 2 3 C 0 7 HCGA Character Generator FEA TU RE PIN ASSIGNMENT •Combined version o f SIS 23C00 and SIS 23C01 •F or Yamaha 6363, 6 3 6 6 , SIS 86 C I6 , RAM 2502


    OCR Scan
    23C00 23C01 250ns 23C07 250ns 23C01 2764 EPROM sis23c01 SIS23C00 zca4 IC 2764 M/tz+595a PDF