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    NA-1335

    Abstract: 42-pin D GM23C8100A
    Text: 23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)


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    GM23C8100A GM23C8100A 8/512K 402A757 NA-1335 42-pin D PDF

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    Abstract: No abstract text available
    Text: W» LG Semicon. Co. LTD Description Pin Configuration The 23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The 23C8100A offers automatic power down controlled by


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    GM23C8100A wjA15 402fl757 PDF

    23C8001A

    Abstract: 23C8001 KM23C2001 2001h 23c4001
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28


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    32000G 32000FP. 23C32100G 32100FP 23C8001A 23C8001 KM23C2001 2001h 23c4001 PDF

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    Abstract: No abstract text available
    Text: 23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The


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    GM23C8100A PDF

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    Abstract: No abstract text available
    Text: 23C8100AFP1 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w o rd m o d e ) • F a s t a c c e s s tim e : 150 n s im a x ) • S u p p ly v o lta g e : s in g le *t-5V


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    KM23C8100AFP1 23C8100AFP1 B100AFP1-20 KM23C8100AFH-25 KM23C8100AFP1) PDF