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    23C512 Price and Stock

    KEMET Corporation C323C512J3G5TA

    CAP CER 5100PF 25V C0G/NP0 RAD
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    DigiKey C323C512J3G5TA Bulk 2,000
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    Mouser Electronics C323C512J3G5TA
    • 1 $0.38
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    • 100 $0.158
    • 1000 $0.094
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    KEMET Corporation C323C512F3G5TA

    CAP CER 5100PF 25V C0G/NP0 RAD
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    DigiKey C323C512F3G5TA Bulk 500
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    Mouser Electronics C323C512F3G5TA
    • 1 $1.04
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    KEMET Corporation C323C512G3G5TA

    CAP CER 5100PF 25V C0G/NP0 RAD
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    DigiKey C323C512G3G5TA Bulk 1,000
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    Mouser Electronics C323C512G3G5TA
    • 1 $0.8
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    KEMET Corporation C323C512KAG5TA

    CAP CER RAD 5.1NF 250V C0G 10%
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    DigiKey C323C512KAG5TA Bulk 1,500
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    Mouser Electronics C323C512KAG5TA
    • 1 $0.49
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    KEMET Corporation C323C512G2G5TA

    CAP CER 5100PF 200V C0G/NP0 RAD
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    DigiKey C323C512G2G5TA Bulk 500
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    Mouser Electronics C323C512G2G5TA
    • 1 $1.42
    • 10 $1.13
    • 100 $0.842
    • 1000 $0.593
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    Find more 23C512 price and stock on Findchips.com

    23C512 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    23c512-10

    Abstract: IN3064 23c512
    Text: Introduction 23C512 512K-BIT MASK ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 64K x 8 (byte mode) • Fast access time - Random access: 100ns (max.) (Output load 100pF) • Current - Operating: 30mA @ 5M Hz • Supply voltage - 4.5V ~ 5.5V


    Original     		PDF MX23C512 512K-BIT 100ns 100pF) MX23C512PC-10 MX23C512MC-10 MX23C512QC-10 23c512-10 IN3064 23c512

    23C512-20

    Abstract: 23C512A
    Text: HM 23C512,HM 23C512A,HM 23C512M ,HM 23C512AM 64K X 8 CMOS ROM General Description The HM 23C512 and HM 23C512A high performance Read Only Memories are organized as 65,536 words by 8 bits with access times 150 ns to 200 ns. The ROMs are designed to be compat­


    OCR Scan     		PDF 23C512 23C512A 23C512M 23C512AM 23C512-20

    23C512-20

    Abstract: 23C512
    Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7=ib4145 G 0 D 0 3 7 0 23C512 ? ■ CMOS MASK ROM is " 6 4 K x 8 Bit Mask ROM FEATURES GENERAL DESCRIPTION • Fully static operation • Silicon gate CMOS technology • Maximum access time 23C512-15: 150 ns 23C512-20: 200 ns


    OCR Scan     		PDF ib4145 KM23C512 23C512-15: 23C512-20: 23C512-25: 23C512 23C512I KM23C512 1N3064 7Tb4142 23C512-20 23C512

    23C1024

    Abstract: l0617 23C512 10EZ11 zi05 L-024 23C512A
    Text: "SILICON INT EGRATE D 2TE D H flS SinüPTT]□ 0 O 0□ 7 ? CMOS M A S K R O M SIS 23C512/SIS 23C512A 64Kx8 CMOS MASK ROM FEATURE •Access time 200/250ns •Single + 5V power supply •TTL Compatible inputs and outputs •Three-state outputs •Tw o Programmable Chip Select for Output Control


    OCR Scan     		PDF 23C512/SIS 23C512A 64Kx8 200/250ns 23C512A- 23C512 23C512 23C1024 23C1024A 23C1Q24/A-25 l0617 10EZ11 zi05 L-024 23C512A

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    256x16 eprom

    Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1


    OCR Scan     		PDF ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B

    UM23C512

    Abstract: 23c512 UM23C512H UM-23 23C51
    Text: 6 5 ,5 3 6 X 8 -B IT CMOS MASK-PROGRAMMABLE ROM Features • 65,536 x 8 -b it organization ■ 3-state ou tputs fo r wired-OR expansion ■ Single + 5V power supply ■ Access tim e: 150 ns max. ■ F u lly static operation ■ Current: ■ Available in 28 pin DIP package (23C512) or in


    OCR Scan     		PDF UM23C512) UM23C512H) 23C512 UM23C512 UM23C512H UM-23 23C51

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001

    Untitled

    Abstract: No abstract text available
    Text: 'S S T • 23C512 512K -B IT M ASK ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 64K x 8 (byte mode) • Fast access time - Random access: 100ns (max.) (Output load 10OpF) • Current - Operating: 30mA @ 5M Hz • Supply voltage - 4.5V ~ 5.5V


    OCR Scan     		PDF MX23C512 MX23C512PC-10 MX23C512MC-10 MX23C512QC-10 100ns 100ns 10OpF) A0-A15

    KM23C1010

    Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10


    OCR Scan     		PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 KM23C1010 KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ