23c8100
Abstract: MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C8100TC-12
Text: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%
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MX23C8100
100ns
500mil)
600mil)
MX23C8100PC-10
MX23C8100PC-12
120ns
MX23C8100PC-15
150ns
23c8100
MX23C8100
MX23C8100MC-10
MX23C8100MC-12
MX23C8100MC-15
MX23C8100PC-10
MX23C8100PC-12
MX23C8100PC-15
MX23C8100TC-10
MX23C8100TC-12
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atmel 844
Abstract: 61256 GMS960800B atmel dream sam9713 SRAM 61256 dream sam9713 roland 13X2 la 7632 GMS970800B
Text: Features • The SAM9713GS Board provides: 1 – – – – High Quality Wavetable Synthesis with 38 Voice Polyphony Compatible Reverb and Chorus Surround Four Band Equalizer Description The SAM9713GS Board demonstrates a typical application of the SAM9713. This is a
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SAM9713GS
SAM9713.
SAM9713
PCM1718E
GMS960800B®
GMS970800BTM
GMS960800B
GMS970800B.
GMS970800B
atmel 844
61256
atmel dream sam9713
SRAM 61256
dream sam9713
roland
13X2
la 7632
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PDF
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61256
Abstract: atmel 844 13X2 1N4148 ATSAM9713 GMS960800B GMS970800B PCM1718E la 7632
Text: Features • The ATSAM9713GS Board provides: 1 – – – – High Quality Wavetable Synthesis with 38 Voice Polyphony Compatible Reverb and Chorus Surround Four Band Equalizer Description The ATSAM9713GS Board demonstrates a typical application of the ATSAM9713.
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Original
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ATSAM9713GS
ATSAM9713.
ATSAM9713
PCM1718E
GMS960800B®
GMS970800BTM
GMS960800B
GMS970800BTM,
61256
atmel 844
13X2
1N4148
GMS970800B
la 7632
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%
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Original
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MX23C8100
100ns
500mil)
600mil)
MX23C8100PC-10
100ns
MX23C8100PC-12
120ns
MX23C8100PC-15
150ns
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PDF
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61256
Abstract: SRAM 61256 dream sam9713 61256 SRAM SAM9713 roland sram GMS970800B Roland schematic SOP44 GMS960800B
Text: 9713GS Reference Design 9713GS BOARD SAM9713 REFERENCE DESIGN 9713GS demonstrates a typical application of SAM9713. This is a Waveblaster compatible board which uses SAM9713 with 512kx16 ROM 8Mbit , 32kx8 SRAM, and a Burr-Brown PCM1718E stereo DAC. The ROM can be of the type GMS960800B (with express permission of Roland corporation, special
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Original
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9713GS
SAM9713
SAM9713.
512kx16
32kx8
PCM1718E
GMS960800B
61256
SRAM 61256
dream sam9713
61256 SRAM
roland sram
GMS970800B
Roland schematic
SOP44
GMS960800B
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%
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Original
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MX23C8100
100ns
500mil)
600mil)
MX23C8100PC-10
100ns
MX23C8100PC-12
120ns
MX23C8100PC-15
150ns
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PDF
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Untitled
Abstract: No abstract text available
Text: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The 23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|
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OCR Scan
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23C8100
512Kx
16/IM
GM23C8100
576x8
D8-D14
D15/A-1
GM23C8100
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PDF
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NA-1335
Abstract: 42-pin D GM23C8100A
Text: 23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)
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OCR Scan
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GM23C8100A
GM23C8100A
8/512K
402A757
NA-1335
42-pin D
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PDF
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Untitled
Abstract: No abstract text available
Text: W» LG Semicon. Co. LTD Description Pin Configuration The 23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The 23C8100A offers automatic power down controlled by
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OCR Scan
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GM23C8100A
wjA15
402fl757
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GM23C8100BFW
Abstract: 23C8100B
Text: @ LG Semicon. Co. LTD Description The 23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The 23C8100B offers automatic power down controlled by the mask
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OCR Scan
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GM23C8100B
120/15Qns.
IDA14
A0-A18
015/A-l
MD2B757
0004fl32
GM23C8100BFW
23C8100B
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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OCR Scan
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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PDF
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23C8100DG
Abstract: No abstract text available
Text: 23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption
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OCR Scan
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KM23C8100D
512Kx16)
100ns
KM23C8100D
42-DIP-600
23C8100DG
44-SQP-600
23C8100D
KM23C81
42-DIP-600)
23C8100DG
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Untitled
Abstract: No abstract text available
Text: M X23C81OO MACftONIX, INC. 8 M - B I T 1 M C x M 8 O / 5 S 1 M S A K S K x R 1 8 O M FEATURES • • • • • Switchable configuration -1 M x 8(byte mode) - 512K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns (max)
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X23C81OO
100/120/150/200ns
MX23C8100
MX23C8100PC-10
MX23C8100MC-10
MX23C8100PC-12
MX23C8100MC-12
MX23C8100PC-15
MX23C8100MC-15
MX23C8100PC-20
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Untitled
Abstract: No abstract text available
Text: KM23C81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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KM23C81
/512Kx16)
100ns
8100D
44-TSQ
P2-400
23C8100D
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PDF
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23C8001A
Abstract: 23C8001 KM23C2001 2001h 23c4001
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28
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32000G
32000FP.
23C32100G
32100FP
23C8001A
23C8001
KM23C2001
2001h
23c4001
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM 23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption
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OCR Scan
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KM23C8100FP2
150ns
64-pin
KM23C81OOFP2
KM23C8100FP2)
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23C81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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OCR Scan
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KM23C81
/512Kx16)
100ns
23C8100D
42-DIP-600
23C8100DG
44-SQP-600
23C8100D
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 4EE D B 7^4142 23C8100 GDlllb? 3 B S M 6 K CMOS MASK ROM 8M-Bit 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)
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OCR Scan
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KM23C8100
150ns
42-pin,
44-pin,
KM23C8100
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C8100 MXIC 8M-Bit Mask ROM 8/16 Bit Output FEATURES ORDER INFORMATION Part No. Access Time Package 23C8100MC-10 100ns 44 pin SOP 23C8100MC-12 120ns 44 pin SOP 23C8100MC-15 150ns 44 pin SOP 23C8100PC-10 100ns 42 pin DIP Standby: 50nA 23C8100PC-12
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OCR Scan
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MX23C8100
MX23C8100MC-10
100ns
MX23C8100MC-12
120ns
MX23C8100MC-15
150ns
MX23C8100PC-10
MX23C8100PC-12
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PDF
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Untitled
Abstract: No abstract text available
Text: MACRONIX IN C 5 3 E ]> ¿ b a a a a e □ □ a 3 t.fi h s i • P1ACX f j - i s - IV l JC „ M X23 C 8 10 0 M ACPO NIX, INC. B M a r n i M x b / b i c k x is CMOS MASK ROM FEATURES • Switchable configuration - 1Mx8 byte mode) - 512K x 16(word mode) • Single +5V power supply
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OCR Scan
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MX23C8100
120/150/200ns
44-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: 23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The
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OCR Scan
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GM23C8100A
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PDF
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC 45E 1 7^4142 23C8100FP1 0011171 S CMOS MASK ROM ÒM-Bit 1M X 8 / 5 1 2 K X 16) CMOS MASK ROM FEATURES S witchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V
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OCR Scan
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KM23C8100FP1
150ns
44-pin
8100FP
DG11174.
23C8100FP1)
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)
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OCR Scan
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71b4m
KM23C8100FP2
DD1117S
150ns
64-pin
3fe414E
23C8100FP2)
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PDF
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PE 8001A
Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1
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OCR Scan
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
PE 8001A
23C1001
23C1010
KM68512
km41c256
TFK 805
TFK 001
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PDF
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