Untitled
Abstract: No abstract text available
Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation
|
Original
|
2SK2855
|
PDF
|
TB62752AFUG
Abstract: TA4401CT TB7001FL TOSHIBA RF Power Module
Text: TOSHIBA SEMICONDUCTOR BULLETIN EYE December 2005 VOLUME 161 CONTENTS New Products White LED Driver IC .2 SiGe Power Amplifier for 1.9GHz to 2.5GHz Wireless Applications.3
|
Original
|
TB62752AFUG
TB62752AFUG
TA4401CT
TB7001FL
TOSHIBA RF Power Module
|
PDF
|
2SK2854
Abstract: No abstract text available
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation
|
Original
|
2SK2854
SC-62
849MHz
13d54
000707EAA2
2SK2854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA
|
Original
|
2SK2855
|
PDF
|
TOSHIBA Semiconductor Reliability Handbook
Abstract: 2SK2855
Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use
|
Original
|
2SK2855
TOSHIBA Semiconductor Reliability Handbook
2SK2855
|
PDF
|
2SK2855
Abstract: No abstract text available
Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation
|
Original
|
2SK2855
SC-62
849MHz
2SK2855
|
PDF
|
2SK2854
Abstract: No abstract text available
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation
|
Original
|
2SK2854
SC-62
849MHz
2SK2854
|
PDF
|
TOSHIBA Semiconductor Reliability Handbook
Abstract: 2SK2854
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use
|
Original
|
2SK2854
TOSHIBA Semiconductor Reliability Handbook
2SK2854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 0.5 A Drain Power Dissipation
|
Original
|
2SK2854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA
|
Original
|
2SK2854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use
|
Original
|
2SK2854
|
PDF
|
RF1492
Abstract: TB1293FNG rf928 TB-129 1SV278 2SC2712 PN100 SSOP30 RF2192 MHz VCO
Text: TB1293FNG 東芝 Bi-CMOS 形リニア集積回路 シリコン モノリシック TB1293FNG デジタル衛星放送受信用ダイレクト I / Q 復調 IC TB1293FNG はデジタル衛星放送受信用の I/Q 復調 IC です。 920MHz~2200MHz の RF 信号を直接 I/Q 復調する事ができます。
|
Original
|
TB1293FNG
920MHz2200MHz
PLL90deg
SSOP30
SSOP30-P-300-0
90deg
500kHz,
RF1492
TB1293FNG
rf928
TB-129
1SV278
2SC2712
PN100
SSOP30
RF2192
MHz VCO
|
PDF
|
2SK2855
Abstract: No abstract text available
Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 10 V Gate-Source Voltage VGSS ±6 V ID 1.0 A Drain Power Dissipation
|
Original
|
2SK2855
SC-62
849MHz
000707EAA2
2SK2855
|
PDF
|
jeita sc-62
Abstract: 2SK2854
Text: 2SK2854 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2854 ○ UHF 帯携帯電話出力段用 ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途に
|
Original
|
2SK2854
SC-62
849MHz
13dBmW,
23dBmW
42SK2854
jeita sc-62
2SK2854
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA
|
Original
|
2SK2854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA
|
Original
|
2SK2854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA
|
Original
|
2SK2855
|
PDF
|
transistor marking 7D
Abstract: ED34 2SK2855 7d marking
Text: TOSHIBA 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2855 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature
|
OCR Scan
|
2SK2855
SC-62
849MHz
f-849MHz
23dBmW
transistor marking 7D
ED34
2SK2855
7d marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature
|
OCR Scan
|
2SK2854
849MHz
13dBmW
849MHzontained
f-849M
|
PDF
|
ITE 85111 TE
Abstract: ba3423s
Text: BA3423S BA3423S System Preamp for W Radio/Cassette Record/Play >i'l-B '+ iiH /D im e n s io n s Unit : mm BA3423S(Jv W 7 y W f f l i : I H S g L * x A 7 °U r> 7 "T T „ #8Ax 7 - f > m t ) ,B > * • ii^ t ii* W O N / O F F x (IIS ) /-V J U / +N5OU S A £ 4 '}< 7 )iffiH 1'C
|
OCR Scan
|
BA3423S
BA3423S
ITE 85111 TE
|
PDF
|
77N TOSHIBA
Abstract: 2SK2854
Text: TOSHIBA 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2854 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Drain Power Dissipation Channel Temperature
|
OCR Scan
|
2SK2854
SC-62
f-849MHz
849MHz
13dBmW
77N TOSHIBA
2SK2854
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND AMPLIFIER APPLICATION SILICON N CHANNEL MOS TYPE 2SK2855 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING UNIT v dss 10 ±6 1.0 0.5 150 -5 5 -1 5 0 V V A W °C °C Drain-Source Voltage Gate-Source Voltage
|
OCR Scan
|
2SK2855
849MHz
23dBmW
|
PDF
|