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    Untitled

    Abstract: No abstract text available
    Text: F L M 3742-121 A Internally Matched Pow er ìaAs I l l s ABSOLUTE MAXIMUM RATING (Am bient Tem perature Ta=25°C) ta n t Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 57.5 w °c °c Channel Temperature —1 (/> StmiafftTemperature


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    PDF 31dEim 29dE3m 25dBm 23dE3m 27dBm

    FLM3742-12D

    Abstract: FLM3742-12DA
    Text: F,?T<.,. FLM3742-12DA 9 r UJ11jU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 41 dBm Typ. • • • • • • High Gain: G-|dB = 11 -5clB (Typ) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz


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    PDF FLM3742-12DA 41dBm -45dBc 30dBm FLM3742-12DA FLM3742-12D

    FLM3742-12DA

    Abstract: No abstract text available
    Text: n FLM3742-12DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -45dBc@Po =30dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


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    PDF FLM3742-12DA -45dBc 30dBm FLM3742-12DA