CA3KN31BD
Abstract: LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k
Text: CONTROL GEAR/DIN TERMINALS AC contactors page 239 Time delay control blocks page 240 DIN rail terminals page 248 Thermal overload relays page 239 Auxiliary contact blocks 241 Coil suppressor modules 241 Contact blocks 239-241, 244 Contactors 239-241 Control relays
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UL94V-0
CIM/8W-D10
CIM/R4-WB-S-24
CIM/R8-WB-S-24
CIM/R16-WB-S-24
16-way
CA3KN31BD
LA1DN11
telemecanique lc1d09
LC1K09
telemecanique D range contactors
relays telemecanique
LP1D0910BD
Telemecanique LR2D1321
telemecanique contactors
Telemecanique LC1k
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d405
Abstract: 2SC4574 D406 transistor D406 2SD2170
Text: Transistors 2SD2170 2SC4574 96-241–D405 (94L-686-D406) 313
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2SD2170
2SC4574
94L-686-D406)
d405
2SC4574
D406
transistor D406
2SD2170
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Copper Interconnect on GaAs pHEMT by Evaporation Process
Abstract: No abstract text available
Text: Copper Interconnect on GaAs pHEMT by Evaporation Process Kezia Cheng Skyworks Solutions Inc. 20 Sylvan Road, Woburn, MA. [email protected] 781 241-2821 Keywords: … pHEMT, Copper, Evaporation Abstract Copper (Cu) interconnects have been quite successful
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Power Semiconductor Applications Philips Semiconductors
Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
Text: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243
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Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
Abstract: No abstract text available
Text: Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing Kezia Cheng Skyworks Solutions Inc., 20 Sylvan Road, Woburn, MA 01801 [email protected] 781 241-2821 Keywords: Ohmic Metal, Contact Resistance, Electrochemical, Galvanic, Erosion
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PDTC113EU
Abstract: PDTA123EE PDTA144EE PUMB16 PEMH15 PEMD4 PDTC113ZU PDTC114EU PUMH15 PUMH20
Text: Semiconductors Philips’ Resistor-Equipped Transistor RET portfolio Double Resistor-Equipped Transistors SOT457 (SC-74) SOT363 (SC-88) SOT666 Key features • Extensive range - 241 products already released - ~ 400 products will be available in 2004 • Single or dual RETs with large choice of resistor combinations
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OT457
SC-74)
OT363
SC-88)
OT666
MSE194
MSE193
PUMH15
PUMH11
PDTC113EU
PDTA123EE
PDTA144EE
PUMB16
PEMH15
PEMD4
PDTC113ZU
PDTC114EU
PUMH15
PUMH20
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transistor tt 2170
Abstract: TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652
Text: MSSI121/241/241B MOSEL VITELIC INSTANT VOICE ROM Features Single power supply can operate at 2.4V through 6V. Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. The voice content is stored for 7-12 seconds for SI121 13-24 for SI241/241B including mute
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MSSI121/241/241B
SI121
SI241/241B
MSM9159
MSM9159B
MSSI121/241/241B
PID224B
transistor tt 2170
TT 2170
660 TG
11823 die
660 tg diode
transistor t 2180
High power audio transistor equivalent table
241B
MSM9140
19652
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Electron Radiation as an Indicator of Gold Nodule Defect during E-beam Evaporation
Abstract: No abstract text available
Text: Electron Radiation as an Indicator of Gold Nodule Defect during E-beam Evaporation Kezia Cheng Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA. [email protected] 781 241-2821 Keywords: … Back scattered electron, E-beam evaporation, Gold nodules, Gold spitting
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16th-19th,
Electron Radiation as an Indicator of Gold Nodule Defect during E-beam Evaporation
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241A
Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
Text: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,
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T0-220B
Tc425Â
BD241
BD241A
BD241B
-3-S93363,
241A
241B
BD NPN transistors
312c
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Untitled
Abstract: No abstract text available
Text: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,
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T0-220B
BD241
BD241A
BD241B
8700E
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1
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Q62702-F302
Q62702-F1241
235b05
DGbb751
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T0-220B
Abstract: pj30 241B BD241 BD241A BD241B 241a
Text: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO
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U241B
-241B
T0-220B
BD241
BD241A
BD241B
Tc425Â
Junctio41
BD241B
T0-220B
pj30
241B
BD241
241a
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BO 241 A
Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
Text: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A
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O-220
drawingCB-117on
BO 241 A
bd2410
BD241
TF 241
BD NPN transistors
BD - 100 V
jc31
241B
BD 241
7410
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BF241
Abstract: IC 41 BF bf240 TFK 241 bf 241 Kleine transistor bf UCB 10 Scans-0010445
Text: BF 240 * BF 241 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: BF 240: G eregelte AM- u. FM -Verstärkerstufen in Em itterschaltung BF 241 : AM- u. FM -Verstärkerstufen in Em itterschaltung Applications: BF 240: C ontrolled AM and FM am p lifier stages in com m on em itter configuration
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2SA1241
Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )
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2SA1241)
2SA1241
2SC3076
2SA1241
V10Urns
a1241
A 1241
transistor 2sa1241
1241 transistor
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BD242C
Abstract: BD242 BD242A BD242B bd242 TRANSISTOR
Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Em itter Voltage : BD242 Rating Unit - 45 V : BD242A - 60
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BD242/A/B/C
BD241/A/B/C
BD242
BD242A
BD242B
BD242C
BD242C
BD242
BD242A
BD242B
bd242 TRANSISTOR
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2SA1241
Abstract: 2SC3076
Text: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)
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2SA1241
2SC3076
961001EAA1
2SA1241
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BD242A
Abstract: No abstract text available
Text: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Em itter V oltage : BD242 Rating Unit - 45 V : BD242A - 60
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BD242/A/B/C
241/A/B/C
BD242
BD242A
BD242B
BD242C
BD242A
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transistor a1241
Abstract: A1241 2SA1241 2SC3076 2SA124
Text: 2SA1241 TOSHIBA 2 S A 1 241 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SW ITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 /us (Typ.)
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2SA1241
2SC3076
961001EAA1
transistor a1241
A1241
2SA1241
2SA124
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transistor bf 760
Abstract: transistor bc 241 transistor bf 241 BF241 TRANSISTOR bf241 mosfet bf 66 transistor B 722 transistor bf 237 telefunken ta 400 241 transistor
Text: TELEFUNKEN ELECTRONIC Ô1C D • öSEGG^b G0DS177 ^ ■ ALGG w * * -—- BF 240 •BF 241 TT id ilFy K lK lK l e le c tro n ic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 240: Controlled AM and FM amplifier stages In common emitter configuration
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G0DS177
569-GS
transistor bf 760
transistor bc 241
transistor bf 241
BF241 TRANSISTOR
bf241
mosfet bf 66
transistor B 722
transistor bf 237
telefunken ta 400
241 transistor
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SMD Transistor 1c
Abstract: No abstract text available
Text: • fl235b05 GO'ìbbS1! 241 SIEMENS Voltage Regulator TLE 4274 GSV33 Preliminary Data Sheet Features • • • • • Output voltage tolerance < ± 4 % Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics
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fl235b05
GSV33
Q67006-A9289
P-SOT223-4-1
GSV33
OT-223
fl23SbDS
AED02288
SMD Transistor 1c
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transistor a1241
Abstract: a1241 transistor 2sa1241 2SA1241 2SC3076 IC 1029
Text: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)
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2SA1241
2SC3076
2SA124transportation
transistor a1241
a1241
transistor 2sa1241
2SA1241
IC 1029
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transistor a1241
Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076
Text: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)
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2SA1241
2SC3076
transistor a1241
a1241
a1241 semiconductor
2SA1241
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SA1241 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : V cE (sat) = -0 .5 V (Max.) (IC = - 1 A ) Excellent Switching Time : tstg = 1.0 jl/.s (Typ.)
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2SA1241
2SC3076
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