2450-10 toko
Abstract: TDF2A-2450T-10 2450-10 TOKO filter
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10 DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : : : 2450MHz Fo±50MHz
|
Original
|
TDF2A-2450T-10
2450MHz
50MHz
50ohm
20dB1
Fo-280MHz
16dB1
280MHz
TDF2A-2450TFilter
2450-10 toko
TDF2A-2450T-10
2450-10
TOKO filter
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10 DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :mm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance : : : 2450MHz Fo±50MHz
|
Original
|
TDF2A-2450T-10
2450MHz
50MHz
50ohm
20dB1
Fo-280MHz
16dB1
280MHz
|
PDF
|
TDF2A-2450T-10A
Abstract: 2450-10 toko 2450-10
Text: RoHS compliant SPECIFICATION OF DIELECTRIC FILTER Preliminary TOKO P/No: TDF2A-2450T-10A 1. OUTLINE DIMENSION Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :mm :±0.3 2. ELECTRICAL CHARACTERISTICS Center Frequency (Fo) Passband Width Input Output Impedance
|
Original
|
TDF2A-2450T-10A
2450MHz
50MHz
50ohm
Fo-280MHz
280MHz
TDF2A-2450T-10A
2450-10 toko
2450-10
|
PDF
|
2450 MHz low noise amplifier schematic
Abstract: C06CF Avantek mixer HP83620A Avantek mixer TFX Avantek tfx Rf Front-End TFX-722 GRM36X5R104K10 2.4GHz booster
Text: 3.3V Integrated RF Front-End for 2.4GHz ISM ITT2304GF PRELIMINARY FEATURES • • • • • • • • • Build a Bluetooth or HomeRF radio by connecting directly to popular single chip transceivers like the National LMX3162. 3.3V operation Single positive supply
|
Original
|
ITT2304GF
LMX3162.
ITT2304GF
HP83620A
ACM-040-2222
902045x7
TFX-722
2450 MHz low noise amplifier schematic
C06CF
Avantek mixer
Avantek mixer TFX
Avantek tfx
Rf Front-End
TFX-722
GRM36X5R104K10
2.4GHz booster
|
PDF
|
RF Power Amplifier IC for 2.4 GHz ISM
Abstract: No abstract text available
Text: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V
|
Original
|
ITT2303GJ
ITT2303GJ
C11AH101K5TXL)
C11AH2R0BTXL)
C11AH1R2B5TXL)
P300ECT-ND)
TKS235CT-ND)
1008CS270XKBB)
RF Power Amplifier IC for 2.4 GHz ISM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Preliminary SHF-0289 DC-3GHz, 1 Watt GaAs HFET ° 2.45 GHz Application Circuit at 25 C Vds=8V, Idq=250mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value C d2,5 5.6 pF ROHM MCH18 series Z1 50 ohms, 7.3 deg. @ 2450 MHz
|
Original
|
SHF-0289
250mA)
MCH18
LL1608-
FH15NT
|
PDF
|
pin configuration of ic 1496
Abstract: MAAPSS0093 the pin function of ic 7413 2450 MHz low noise amplifier schematic 96214 99108 M513 MA02303GJ MAAPSS0093SMB MAAPSS0093TR-3000
Text: RoHS Compliant RF Power Amplifier IC For 2.5 GHz ISM MAAPSS0093 V1 Features • • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Voltage Operation Power Added Efficiency As High As 55%
|
Original
|
MAAPSS0093
MA02303GJ
MAAPSS0093
pin configuration of ic 1496
the pin function of ic 7413
2450 MHz low noise amplifier schematic
96214
99108
M513
MA02303GJ
MAAPSS0093SMB
MAAPSS0093TR-3000
|
PDF
|
RF Power Amplifier IC for 2.4 GHz ISM
Abstract: TKS235CT-ND
Text: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ PRELIMINARY FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm
|
Original
|
ITT2303GJ
ITT2303GJ
C11AH101K5TXL)
C11AH2R0BTXL)
C11AH1R2B5TXL)
P300ECT-ND)
TKS235CT-ND)
1008CS270XKBB)
RF Power Amplifier IC for 2.4 GHz ISM
TKS235CT-ND
|
PDF
|
14 pin ic 4027
Abstract: 96214 99108 MA02303GJ 03168 IC 7449 09870
Text: MA02303GJ RF Power Amplifier IC For 2.4 GHz ISM FEATURES •= •= •= •= •= •= •= •= •= •= •= Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V
|
Original
|
MA02303GJ
14 pin ic 4027
96214
99108
MA02303GJ
03168
IC 7449
09870
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF Power Amplifier IC For 2.5 GHz ISM MA02303GJ V6 Features • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm Output Power 26.5 dBm @ 3.3 V
|
Original
|
MA02303GJ
|
PDF
|
ITT2303GJ
Abstract: 99108 IC 7404 not gate
Text: RF Power Amplifier IC for 2.4 GHz ISM ITT2303GJ FEATURES • • • • • • • • • • • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency as high as 55% IP3 = +43 dBm Output Power 26.5 dBm @ 3.3V
|
Original
|
ITT2303GJ
ITT23
ITT2303GJ
99108
IC 7404 not gate
|
PDF
|
1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
|
Original
|
SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
1485C
SE 194
Sirenza amplifier SOT-89
|
PDF
|
MCH18
Abstract: SXA-389B xa3b EL115
Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
|
Original
|
SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
MCH18
xa3b
EL115
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features V2 MA02303GJ Functional Schematic • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS • Single Positive Supply • Power Added Efficiency As High As 55 Percent • IP3 = +43 dBm
|
Original
|
MA02303GJ
MA02303GJ
|
PDF
|
|
|
99108
Abstract: MA02303GJ MA02303GJ-R13 MA02303GJ-R7 MA02303GJ-SMB IC 7449 specifications of IC 7404 14 pin ic 4027 specifications of IC 7404 point to point
Text: RF Power Amplifier IC For 2.5 GHz ISM MA02303GJ V7 Features • • • • • • • • • • • Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm Output Power 26.5 dBm @ 3.3 V
|
Original
|
MA02303GJ
MA02303GJ
99108
MA02303GJ-R13
MA02303GJ-R7
MA02303GJ-SMB
IC 7449
specifications of IC 7404
14 pin ic 4027
specifications of IC 7404 point to point
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features • • • • • • • • • • • V5.1 MA02303GJ Functional Schematic Perfect for 2.4 GHz Cordless DECT WDECT Single Positive Supply Power Added Efficiency As High As 55 Percent IP3 = +43 dBm
|
Original
|
MA02303GJ
MA02303GJ
|
PDF
|
xa3b
Abstract: No abstract text available
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
|
Original
|
SXA-389B
SXA-389BZ
MPO-100136
016REF
118REF
041REF
015TYP
SXA-389B
EDS-102915
xa3b
|
PDF
|
a3bz
Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
|
Original
|
SXA-389B
SXA-389BZ
SXA-389B
AN-075
EDS-102915
a3bz
marking A3BZ
267M3502104
a3bz MARKING
AN-075
MCH18
SXA-389BZ
Sirenza amplifier SOT-89
MMIC SXA 389Bz marking
|
PDF
|
specifications of IC 7404 point to point
Abstract: FR4 dielectric constant at 2.4 Ghz
Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features • • • • • • • • • • • V1 MA02303GJ Functional Schematic Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS Single Positive Supply Power Added Efficiency As High As 55 Percent
|
Original
|
MA02303GJ
MA02303GJ
MO-187
specifications of IC 7404 point to point
FR4 dielectric constant at 2.4 Ghz
|
PDF
|
FR4 dielectric constant at 2.4 Ghz
Abstract: C11AH1R 14 pin ic 7404 not gate fr-4 dielectric constant 4.4 99108 specifications of IC 7404 point to point 96214 MA02303GJ MA02303GJ-R13 MA02303GJ-R7
Text: MA02303GJ RF Power Amplifier IC for 2.4 GHz ISM Features Functional Schematic • Perfect for 802.11B, HOP, SWAP, HOMERF, Bluetooth, WDECT, MDS, MMDS • Single Positive Supply • Power Added Efficiency As High As 55 Percent • IP3 = +43 dBm • Output Power 26.5 dBm @ 3.3 V
|
Original
|
MA02303GJ
MA02303GJ
MO-187
FR4 dielectric constant at 2.4 Ghz
C11AH1R
14 pin ic 7404 not gate
fr-4 dielectric constant 4.4
99108
specifications of IC 7404 point to point
96214
MA02303GJ-R13
MA02303GJ-R7
|
PDF
|
marking xt2 mmic
Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
Text: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
|
Original
|
SXT-289
SXT-289
016REF
118REF
041REF
EDS-101157
marking xt2 mmic
MCH18
MCR03
267M3502104
Sirenza amplifier SOT-89
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 0.5 W, 2.4 GHz Power Amplifier AM52-0024 V 1.2 Features n n n n n Functional Schematic Ideal for 802.11b ISM Applications Single Positive Supply Output Power 27.5 dBm 57% Typical Power Added Efficiency Downset MSOP-8 Package PIN 8 PIN 1 Description M/A-COM’s AM52-0024 is a 0.5 W, 2.4 GHz GaAs
|
Original
|
AM52-0024
AM52-0024
AM520024
|
PDF
|
GETEK
Abstract: ITT2301AF C11AH100 Dielectric Labs
Text: 3.6V 0.5W RF Power Amplifier IC for 2.4 GHz ISM ITT2301AF Features Applications § § § § • • • • • • • 2.4 GHz ISM Cordless Phones Cordless PBX Radio/Wireless Local Loop RLL/WLL V DD1 VDD2 N/C GND GND GND GND GND RFIN/VGG1 PRELIMINARY Single Positive Supply
|
Original
|
ITT2301AF
GETEK
ITT2301AF
C11AH100
Dielectric Labs
|
PDF
|
2450-10 toko
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDF2A-2450T-10A DIMENSION Marking 5.7 Marking:2450-10 TOKO A=5.1 B=2.5 T=2.25 Tolerance Unit :±0.3 :inm 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo 2450MHz Passband Width Fo±50MHz Input Output Impedance
|
OCR Scan
|
TDF2A-2450T-10A
2450MHz
50MHz
50ohm
80MHz
280MHz
00MHz
2450-10 toko
|
PDF
|
