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    248NM Search Results

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    248NM Price and Stock

    ebm-papst 6248 NM

    DC Fan Ball Bearing 48V 11.5W 2850RPM 206CFM 50dB Flange Mount - Bulk (Alt: 6248NM)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 6248 NM Bulk 18 Weeks 25
    • 1 -
    • 10 -
    • 100 $96.063
    • 1000 $74.879
    • 10000 $74.879
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    ebm-papst 6248NM

    DC Fans DC Tubeaxial Fan, 172x51mm Round, 48VDC, 206CFM, 11.5W, 50dBA, Ball, Terminals
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 6248NM 22
    • 1 $89.69
    • 10 $89.68
    • 100 $89.67
    • 1000 $89.67
    • 10000 $89.67
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    Newark 6248NM Bulk 25
    • 1 -
    • 10 -
    • 100 $105.48
    • 1000 $105.48
    • 10000 $105.48
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    RS 6248NM Bulk 13 Weeks 1
    • 1 $100.25
    • 10 $100.25
    • 100 $100.25
    • 1000 $100.25
    • 10000 $100.25
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    Master Electronics 6248NM
    • 1 $111.33
    • 10 $100.76
    • 100 $86.63
    • 1000 $70.59
    • 10000 $70.59
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    Neutron USA 6248NM 22
    • 1 $278.02
    • 10 $278.02
    • 100 $278.02
    • 1000 $278.02
    • 10000 $278.02
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    Sager 6248NM 104 1
    • 1 $108.71
    • 10 $102.5
    • 100 $89.01
    • 1000 $89.01
    • 10000 $89.01
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    248NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dlp dmd chip

    Abstract: UV LED 280NM .55" dmd chip chip dmd LCOS pico projector 311nm led uv 280nm dlp mirror chip Laser video projector infrared cmos digital image
    Text: DLP Introduction 1 Topics • DMD Trivia Digital Micromirror Device • How does DLP Work? • New Application Areas 2 DMD – Heart of the DLP® Technology Lifetime >100,000 hrs Number of Mirrors 480,000 to >2,000,000 Mechanical Elements Aluminum Mechanical


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    Treadmill

    Abstract: POWER SUPPLY for Treadmill ionizer teflon af asahi glass delay line u-key hydrocarbon polymeric symposium NIKON 13Nm
    Text: 157-nm Lithography for 100-nm Node Challenges and Progress G. Dao and Y. Borodovsky Acknowledgment The Japan Electronic Journal P. Gargini, P. Silverman, F. C. Lo, A. Grenville, L. Liao, E. Panning, Orvek, and J.F. Zheng R =


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    PDF 157-nm 100-nm Treadmill POWER SUPPLY for Treadmill ionizer teflon af asahi glass delay line u-key hydrocarbon polymeric symposium NIKON 13Nm

    211-HSG-D09-SR

    Abstract: 212-PINFHD-26
    Text: Company Profile DE: UK: F: [email protected] [email protected] [email protected] Allectra – Mechanical, Electrical and Optical Components for UHV and High Vacuum COMPANY HISTORY Allectra GmbH was founded in 2002 in Berlin. Within the first year, the range of Sub-D Feedthroughs and associated


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    Traveling Wave Amplifier

    Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
    Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT


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    PDF 85GHz 575mA/mm, 753mW/mm 18GHz. 12dBm AV02-1684EN Traveling Wave Amplifier 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing

    sartorius

    Abstract: AR237J PAR710 D9000 ellipsometer photoresist
    Text: 193nm CD shrinkage under SEM: modeling the mechanism Andrew Habermas1, Dongsung Hong1, Matthew Ross2, William Livesay2 Cypress Semiconductor, 2401 East 86th St, Bloomington, MN 55425 2 Electron Vision Corp., 10119 Carroll Canyon Road, San Diego, CA 92131-1109l


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    PDF 193nm 92131-1109l 248nm sartorius AR237J PAR710 D9000 ellipsometer photoresist

    ipl xenon

    Abstract: gore membrane vents power supply for magnetron 80-wafer-per-hour schematic diagram of ip camera ,ipl xenon spy camera circuit diagram spy camera schematic diagram intel atom carl zeiss
    Text: MICROPROCESSOR REPORT www.MPRonline.com T H E I N S I D E R ’ S G U I D E T O M I C R O P R O C E S S O R H A R D WA R E EXTREME LITHOGRAPHY Intel Backs EUV for Next-Generation Lithography By Ke ith D ie fe ndor ff {6/19/00-01} Working at the very boundary between theoretical physics and practical engineering, scientists at Lawrence Livermore, Sandia, and Lawrence Berkeley National Laboratories


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