Untitled
Abstract: No abstract text available
Text: Product Brief Integrated Circuit Systems, Inc. M2006-04 VCSO BASED FREQUENCY TRANSLATOR GENERAL DESCRIPTION PIN ASSIGNMENT 9 x 9 mm SMT 27 26 25 24 23 22 21 20 19 nDIF_REF1 GND REF_CLK DIF_REF0 nDIF_REF0 REF_SEL1 S_LOAD S_DATA VCC The M2006-04 is a VCSO (Voltage Controlled SAW
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M2006-04
M2006-04
M2006-11
24Mar2003
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M250
Abstract: SD57060 SD57060-01 0821 ST
Text: SD57060-01 RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european
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SD57060-01
945MHz
2002/95/EC
SD57060-01
M250
SD57060
0821 ST
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Untitled
Abstract: No abstract text available
Text: SD57060 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M243 Epoxy sealed
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SD57060
945MHz
2002/95/EC
SD57060
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Untitled
Abstract: No abstract text available
Text: Product Brief Integrated Circuit Systems, Inc. VCSO BASED FREQUENCY TRANSLATOR GENERAL DESCRIPTION PIN ASSIGNMENT 9 x 9 mm SMT 27 26 25 24 23 22 21 20 19 nDIF_REF1 GND REF_CLK DIF_REF0 nDIF_REF0 REF_SEL1 S_LOAD S_DATA VCC The M2006-11 is a VCSO (Voltage Controlled SAW
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Original
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M2006-11
M2006-04
24Mar2003
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PDF
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M250
Abstract: SD57060 SD57060-01
Text: SD57060-01 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M250
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Original
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SD57060-01
945MHz
2002/95/EC
SD57060-01
M250
SD57060
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ST 9406
Abstract: No abstract text available
Text: STX790A Medium current, high performance, low voltage PNP transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER ) s t( c u d Applications
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STX790A
O-92AP
ST 9406
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JESD97
Abstract: STX790A STX790A-AP X790A
Text: STX790A Medium Current, High Performance, Low Voltage PNP Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 3A continuous collector current ■ 40V breakdown voltage V(BR CER) ■ In compliance with the 2002/93/EC European
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STX790A
2002/93/EC
JESD97
STX790A
STX790A-AP
X790A
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Untitled
Abstract: No abstract text available
Text: SD57120 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120W with 13dB gain @ 960MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european
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SD57120
960MHz
2002/95/EC
SD57120
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Untitled
Abstract: No abstract text available
Text: SD57060-01 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M250
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SD57060-01
945MHz
2002/95/EC
SD57060-01
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M243
Abstract: SD57060 1030F
Text: SD57060 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M243 Epoxy sealed
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SD57060
945MHz
2002/95/EC
SD57060
M243
1030F
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transistor st z7
Abstract: 200B 20AWG 700B M252 SD57120
Text: SD57120 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120W with 13dB gain @ 960MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european
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SD57120
960MHz
2002/95/EC
SD57120
transistor st z7
200B
20AWG
700B
M252
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PDF
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pa 66 gf
Abstract: M36W832BE M36W832TE
Text: M36W832TE M36W832BE 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V ■ – VPPF = 12V for Fast Program (optional)
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M36W832TE
M36W832BE
512Kb
M36W832TE:
88BAh
LFBGA66
M36W832BE:
88BBh
pa 66 gf
M36W832BE
M36W832TE
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pa 66 gf
Abstract: M36W832BE M36W832TE
Text: M36W832TE M36W832BE 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = 2.7V to 3.3V – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional)
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M36W832TE
M36W832BE
512Kb
M36W832TE:
88BAh
LFBGA66
M36W832BE:
88BBh
pa 66 gf
M36W832BE
M36W832TE
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PDF
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Untitled
Abstract: No abstract text available
Text: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive
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SD57030
945MHz
2002/95/EC
SD57030
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Untitled
Abstract: No abstract text available
Text: CD00001880 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 6733 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature
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CD00001880
SD57060-01,
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PDF
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Untitled
Abstract: No abstract text available
Text: CD00002394 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 7719 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature
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CD00002394
SD57030,
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ST 9406
Abstract: st mar 705 to-92a X790A transistor ST 548 STX790A STX790A-AP STX790AG-AP
Text: STX790A Medium current, high performance, low voltage PNP transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER Applications ■ Power management in portable equipment
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Original
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STX790A
O-92AP
STX790AG-AP
ST 9406
st mar 705
to-92a
X790A
transistor ST 548
STX790A
STX790A-AP
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PDF
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X790A
Abstract: JESD97 STX790A STX790A-AP
Text: STX790A Medium current, high performance, low voltage PNP transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER Applications ■ Power management in portable equipment
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Original
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STX790A
O-92AP
X790A
JESD97
STX790A
STX790A-AP
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PDF
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TR 609
Abstract: Able
Text: TH I S DRAWING IS COPYRIGHT UNPUBLISHED. 2000 RELEASED BY TYCO ELECTRONICS FOR C O R P O R A T I ON . A L L PUBLICATION RI<5HTS 2000 LOC RESERVED. REV I S I O N S D I ST Al LTR A1 DESCRIPTION DATE PART NUMBERS CHANGED TO TYCO DWN ACK 24MAR2003 ARVD G.F.
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24MAR2003
175-06G
175-14G
175-20G
175-26G
175-34G
175-36G
1AR2003
TR 609
Able
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. w COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AF 50 R E V IS IO N S LTR DESCRIPTION D 1. S P E C IF IC A T IO N S : M A G N E T W IR E # 1 8 ~ # 3 4 . 0 4 0 " C 1 , 0 2 M M - > 0 0 G " C 0 .1 G M M > D I A ,
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13APR04
24MAR2003
25MAR2003
31MAR2000
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