Untitled
Abstract: No abstract text available
Text: ST7-10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.0k V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25’
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ST7-10
Current160
Voltage100
Current40m
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Untitled
Abstract: No abstract text available
Text: 376E Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage250 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25
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Current160
Voltage250
Current50m
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Untitled
Abstract: No abstract text available
Text: 376B Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage100
Current50m
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Untitled
Abstract: No abstract text available
Text: 160F20 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0k V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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160F20
Current160
Voltage200
Current40m
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Untitled
Abstract: No abstract text available
Text: 376F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage300
Current50m
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Untitled
Abstract: No abstract text available
Text: 376K Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage500
Current50m
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Untitled
Abstract: No abstract text available
Text: 376G Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage350 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.25 @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25
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Current160
Voltage350
Current50m
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Untitled
Abstract: No abstract text available
Text: 376H Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage400
Current50m
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Untitled
Abstract: No abstract text available
Text: P1206 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.160 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25#
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P1206
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Untitled
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Text: 376A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage50
Current50m
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Untitled
Abstract: No abstract text available
Text: 376D Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage200
Current50m
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Untitled
Abstract: No abstract text available
Text: 376C Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage150
Current50m
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G3006
Abstract: No abstract text available
Text: G3006 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.160 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)20 @Temp. (øC) (Test Condition)25#
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G3006
Voltage300
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Untitled
Abstract: No abstract text available
Text: 376M Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)110# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage1.2í @I(FM) (A) (Test Condition)160 @Temp. (øC) (Test Condition)25#
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Current160
Voltage600
Current50m
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diode 3106
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
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20F5000
5SYA1162-01
CH-5600
diode 3106
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15x103 0.933 0.242 Rectifier Diode V A A A V mΩ 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
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11D2800
5SYA1166-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 3200 4700 7390 61x103 0.992 0.067 Rectifier Diode V A A A V mΩ 5SDD 48H3200 Doc. No. 5SYA1182-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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48H3200
5SYA1182-00
CH-5600
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209CmQ150
Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
209CmQ150
K1760
408CMQ060
121NQ035
10BQ040
10BQ060
10BQ100
10TQ035S
10TQ045S
30BQ015
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ABB VS 4000
Abstract: 5sya2020
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1
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38H5000
5SYA1177-00
CH-5600
ABB VS 4000
5sya2020
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 160 Unit in mm AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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OCR Scan
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50MHz
--50MHz
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1SV160
Abstract: V160
Text: TOSHIBA 1SV 160 1 SV160 TOSHIBA VARIABLE CAPACITANCE DIODE AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance SILICON EPITAXIAL PLANAR TYPE Unit in mm : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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1SV160
SC-59
50MHz
1SV160
V160
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1SV160
Abstract: No abstract text available
Text: TO SH IBA 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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OCR Scan
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1SV160
SC-59
1SV160
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1SV160
Abstract: No abstract text available
Text: 1SV 160 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 Unit in mm : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature
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OCR Scan
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1SV160
SC-59
50MHz
1SV160
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SV 160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 Unit in mm AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING 15 VR 125 TJ -5 5 -1 2 5
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50MHz
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